Download or read book Plasma Enhanced Layer by layer Deposition and Nano crystallization of Si H Films written by Zhuo (Carol). Chen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Nano-crystalline Si (nc-Si) is a promising candidate for photovoltaic applications due to its better stability compared to amorphous Si, and relatively easy to manufacture at low cost, by plasma enhanced chemical vapor deposition (PECVD), compared to single crystal Si. The crystalline volume fraction of nc-Si films needs to be well controlled to prevent light-induced degradation of the otherwise amorphous hydrogenated Si (a-Si:H). A layer-by-layer technique using two separate plasma sources for a-Si:H deposition and nano-crystallization was developed. A capacitively-coupled plasma (CCP) with SiH4/He feed gas was used to deposit thin a-Si:H layers that were subsequently exposed to a H2 or D2 inductively-coupled plasma (ICP) to induce crystallization in the films. Deposition and nano-crystallization were performed sequentially and periodically to grow thin films. Raman spectroscopy was used to characterize the films and determine the fraction of crystalline. The crystalline volume fraction obtained in this work ranged from 0% to 72%. Many short exposures (20 s or 5 s) to the plasmas were more effective in producing nano-crystalline Si compared to one long exposure (40 min. or 4 min.). In addition, the fraction of nano-crystalline Si increased with increasing H2 ICP-to-SiH4/He CCP exposure time ratio (from 1/4 to 3/2). The crystallites had columnar structure along the film growth direction based on transmission electron microscopy (TEM). Etching of films by the D2 plasma was monitored by mass spectrometry. At 250 oC, the amorphous Si etching rate (0.25 nm/min) was much lower than the deposition rate (1.4 nm/min), and that etching did not occur exclusively on the surface or the near surface region. The blueshift (by about 1 eV) of the dielectric constants peak, found by spectroscopic ellipsometry (SE), suggested the formation of nano-crystallites in the bulk of the films. It is proposed that by tailoring the CCP deposition time as well as the H2 ICP exposure time per cycle, the crystalline fraction and crystallite size of the resulting films can be controlled for more stable solar cell materials. Further, by spatially separating film deposition and nano-crystallization, each of these processes can be individually optimized, providing flexibility in controlling film nanostructure and properties

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Download or read book Thin Film Silicon Solar Cells written by Arvind Victor Shah and published by CRC Press. This book was released on 2010-08-19 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision of a "solar-energy world," as devices based on this technology are becoming efficient, low-cost and durable. This book provides a comprehensive treatment of thin-film silicon, a prevalent PV material, in terms of its semiconductor nature, startin

Download or read book Current Research in Thin Film Deposition written by Ross Birney and published by MDPI. This book was released on 2021-06-03 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, thin films are near-ubiquitous and are utilised in a very wide range of industrially and scientifically important areas. These include familiar everyday instances such as anti-reflective coatings on ophthalmic lenses, smartphone optics, photovoltaics, decorative, and tool coatings. A range of somewhat more exotic applications also exists, such as astronomical instrumentation (e.g., ultra-low loss dielectric mirrors and beam splitters in gravitational wave detectors, such as laser interferometer gravitational-wave observatory (LIGO)), gas sensing, medical devices and implants, and accelerator coatings (e.g., coatings for the large hadron collider (LHC), and compact linear collider (CLIC) experiments at European organization for nuclear research (CERN)). This Special Issue will provide a platform for researchers working in any area within this highly diverse field to share and exchange their latest research findings. The Special Issue contains novel studies encompassing material characterisation techniques, a range of thin-film coating deposition processes and applications of such technology.

Download or read book Physics and Technology of Amorphous Crystalline Heterostructure Silicon Solar Cells written by Wilfried G. J. H. M. van Sark and published by Springer Science & Business Media. This book was released on 2011-11-16 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Download or read book Non Classical Crystallization of Thin Films and Nanostructures in CVD and PVD Processes written by Nong Moon Hwang and published by Springer. This book was released on 2016-06-14 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively involved in the growth of films or nanostructures. This new understanding is called the theory of charged nanoparticles (TCN). This book describes how the non-classical crystallization mechanism can be applied to the growth of thin films and nanostructures in gas phase synthesis. Based on the author’s graduate lecture course, the book is aimed at senior undergraduate and graduate students and researchers in the field of thin film and nanostructure growth or crystal growth. It is hoped that a new understanding of the growth processes of thin films and nanostructures will reduce trial-and-error in research and in industrial fabrication processes.

Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices

Download or read book Plasma Deposited Thin Films written by Mort and published by CRC Press. This book was released on 2018-05-04 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Summary, the objective of this book is to present in one volume a review of the plasma deposition process and the present understanding of the most important and widely used plasma deposited thin film materials, devices and their applications.

Download or read book New Silicion Nanocrystal Materials for Photovoltaic Applications written by Charlotte Weiss and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This Ph.D. thesis addresses the deposition, characterization and improvement of Si nanocrystal layers embedded in a SiC matrix (Si NC/SiC) as future absorber material for top cells of an all-Si tandem solar cell. The required enlargement of the Si NC bandgap is aimed to achieve with the help of quantum confinement (QC). No unambiguous evidence of QC in Si NC/SiC samples were presented in the literature up to now. Even though this also was not possible during this Ph.D. thesis, some necessary preconditions for QC were successfully complied, which are a better understanding and control of the crystallization mechanism, size control of the Si NC and defect passivation. The deposition of amorphous SixC1-x:H layers was conducted by plasma-enhanced chemical vapor deposition. During the annealing step subsequent to layer deposition, H effusion, formation of Si NC, and crystallization of the SiC matrix occurs. All Si NC/SiC samples were subjected to a comprehensive structural and optical characterization. The application of grazing incidence X-ray diffraction, Fourier transform infrared and Raman measurements to Si NC/SiC thin films were significantly improved during this work. The Si NC size control is an indispensable precondition for quantum confinement. For this purpose, two routes were proposed in this work. The Si NC size is shown to increase with increasing Si content of the SixC1-x:H layers. Thus, the Si NC size can be adjusted by adjusting the Si content. The advantage of this method is the fact that singlelayers can be deposited instead of multilayers (ML). The disadvantage is the uncontrollability of the Si NC spacing and the wide size distribution. The second route is with the help of a ML structure. Usually, Si NC/SiC ML structures show strong intermixing during the annealing step and are therefore not suitable for Si NC size control. In this work it is shown that the ML structure can be hindered from intermixing by oxygen incorporation during deposition.

Download or read book Asianano 2002 Proceedings Of The Asian Symposium On Nanotechnology And Nanoscience 2002 written by Masatsugu Shimomura and published by World Scientific. This book was released on 2003-11-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with the broad spectrum of nanoscience and nanotechnology, where interdisciplinary collaboration is essential. Focuses are placed on materials (nanoparticles, dendrimer, CNT), fabrication (LB film, SAM, alternative adsorption, microcontact printing, photofabrication) and characterization (scanning probe microscopy and electron microscopy) on the nanoscale. Emerging applications to nanophotonics and nanobionics are discussed as well.The proceedings have been selected for coverage in:• Materials Science Citation Index®• Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)

Download or read book Handbook of Surfaces and Interfaces of Materials Five Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world

Download or read book Spectroscopic Ellipsometry written by Hiroyuki Fujiwara and published by John Wiley & Sons. This book was released on 2007-09-27 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.

Download or read book Thermal Stability of Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films written by Neerushana Jehanathan and published by . This book was released on 2007 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: [Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’s modulus, are determined by means of nanoindentation. The morphological and physical integrity are analyzed using Scanning Electron Microscopy (SEM) . . . The Young’s modulus (E) and hardness (H) of the film deposited at 448 K were measured to have E=121±1.8 GPa and H=11.7±0.25 GPa. The film deposited at 573 K has E=150±3.6 GPa and H=14.7±0.6 GPa. For the film deposited at 573 K, the Young’s modulus is not affected by heating up to 1148 K. Heating at 1373 K caused significant increase in Young’s modulus to 180∼199 GPa. This is attributed to the crystallization of the film. For the film deposited at 448 K, the Young’s modulus showed a moderate increase, by ∼10%, after heating to above 673 K. This is consistent with the much lower level of crystallization in this film as compared to the film deposited at 573 K. In summary, low temperature deposited PECVD SiNx films are chemically and structurally unstable when heated in air to above 673 K. The main changes include oxidation to SiO2, crystallization of Si3N4 and physical cracking. The film deposited at 573 K is more stable and damage and oxidation resistant than the film deposited at 448 K.

Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Download or read book Fuelling the Future written by A. Mendez-Vilas and published by Universal-Publishers. This book was released on 2012-12-01 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This book contains a selection of papers presented at The Energy & Materials Research Conference (EMR2012), which was held in Torremolinos, Málaga (Spain), during June 20th-22nd 2012."--p. ix.

Download or read book Layer by layer Plasma Enhanced Chemical Vapour Deposition of Nanocrystalline Silicon Thin Films written by Boon Tong Goh and published by . This book was released on 2012 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.