Download or read book Plasma Damaging Process of Porous Ultra low k Dielectrics and Dielectric Repair written by Huai Huang (Ph. D.) and published by . This book was released on 2012 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the on-chip interconnects was impeded by the plasma induced damage during etching and photoresist stripping processes. This dissertation aims to study the mechanism of plasma damage to porous ultra-low-k dielectrics with the objective to minimize the damage and to develop methods and processes to restore the low-k dielectric after the plasma damage. First, the plasma etching induced surface roughening was studied on blanket porous SiCOH films in the fluorocarbon based plasma. Substantial surface roughening was found in the low polymerization region, where the surface roughening process was initiated by the unevenly distribution of surface fluorocarbon polymers in the pore structure and enhanced by ion induced surface densification. With oxygen addition, the surface densification layer increased the radial diffusion rate difference between the top and the bottom of the pits, resulting in further increase of the surface roughness. The best process optimization was found at a "threshold point" where the surface polymerization level is just high enough to suppress the roughness initiation. The second part of this dissertation investigates the mechanism of the oxygen plasma damaging process. The roles of plasma constituents (i.e. ions, radicals and photons with different wavelengths) were differentiated by an on-wafer filter system. Oxygen radical was identified as the most critical and its damage effect was enhanced by photons with wavelength smaller than 185nm. The oxygen radical kinetics in the porous structure of low-k, including diffusion, reaction and recombination, was described analytically with a plasma altered layer model and then simulated with a Monte Carlo computational method, which give guidelines to minimize the damage. The analytical model of oxygen radical kinetic process is also used to investigate the oxygen plasma damage to patterned low-k structure, which is confirmed by experiments. Finally, the dielectric recovery was studied using silylation and UV broadband thermal treatment, both individually and in combination. After both vapor and supercritical CO2 silylation, surface carbon and hydrophobicity were partially recovered. However, the recovery effect was limited to the surface. In comparison, UV treatment can effectively remove water from the bulk of the damaged film and consolidate the silanol bonds with the help of thermal activation. The combination of UV and silylation treatments is more effectively for dielectric recovery than UV or silylation alone. The "UV first" treatment provided a better recovery in sequential processes. Under the same conditions, simultaneous treatments by silylation and UV irradiation achieved better bulk and surface recovery than the sequential process.

Download or read book Mechanistic Study of Plasma Damage to Porous Low k written by Hualiang Shi and published by . This book was released on 2010 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma generator from ICP to RIE, increasing hard mask thickness, replacing O2 by CO2 plasma, increasing CO addition in CO/O2 plasma, and increasing N2 addition in CO2/N2 plasma. By combining analytical techniques with the Kramers-Kronig dispersion relation and quantum chemistry calculation, the origin of dielectric loss was ascribed to the physisorbed water molecules. Post-ash CH4 plasma treatment, vapor silylation process, and UV radiation were developed to repair plasma damage.

Download or read book Mechanical Reliability of Porous Low k Dielectrics for Advanced Interconnect written by Yoonki Sa and published by . This book was released on 2015 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous scaling down of critical dimensions in interconnect structures requires the use of ultralow dielectric constant (k) films as interlayer dielectrics to reduce resistancecapacitance delays. Porous carbon-doped silicon oxide (p-SiCOH) dielectrics have been the leading approach to produce these ultralow-k materials. However, embedding of porosity into dielectric layer necessarily decreases the mechanical reliability and increases its susceptibility to adsorption of potentially deleterious chemical species during device fabrication process. Among those, exposure of porous-SiCOH low-k (PLK) dielectrics to oxidizing plasma environment causes the increase in dielectric constant and their vulnerability to mechanical instability of PLKs due to the loss of methyl species and increase in moisture uptake. These changes in PLK properties and physical stability have been persisting challenges for next-generation interconnects because they are the sources of failure in interconnect integration as well as functional and physical failures appearing later in IC device manufacturing. It is therefore essential to study the fundamentals of the interactions on p-SiCOH matrix induced by plasma exposure and find an effective and easyto- implement way to reverse such changes by repairing damage in PLK structure. From these perspectives, the present dissertation proposes 1) a fundamental understanding of structural transformation occurring during oxidative plasma exposure in PLK matrix structure and 2) its restoration by using silylating treatment, soft x-ray and inert Ar-plasma radiation, respectively. Equally important, 3) as an alternative way of increasing the thermomechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated and investigated. Based on the investigations, stability of PLK films studied by time-dependent ball indentation tester under the elevated temperature, variation in film thickness and dielectric constant, shows striking difference with small change in the chemical bond structure. Comparison of peak extracted by using FTIR (Fourier transform infrared spectroscopy) reveals that viscoplastic deformation and dielectric constant change correctly reflect the evolution in morphological structure of Si-O-Si peak. It is also found that hydrophilic nature of PLK matrix induced by silanol group is more involved with viscoplastic deformation rate and cage-like crosslinking in Si-O-Si peak is responsible for dielectric constant change. However, the level of instability driven by plasma exposure in PLK matrix is found to recover and desired mechanical and electrical properties are obtained by modifying the chemical bond configuration. Silylation process by HMDS (hexamethyldisilazane) works on recovery of hydrophobicity because it replenishes -C while removing -OH bonds. Contact angle is restored by controlling process temperature, however, the silylating agent cannot penetrate deep into PLK matrix without an adequate medium such as supercritical CO2, making it difficult to implement. As a way of overcoming the limitation of UV cure, soft x-ray cure with Al K[alph] target is applied to induce gentle reconfiguration of chemical bond. It is possible to break bond links selectively by controlling x-ray energy level and also reduce thermal curing temperature due to the increased penetration depth. As a result of soft x-ray cure, film thickness loss almost not occurred. However, influence of x-ray radiation on the moisture removal is limited. Basically, oxidative plasma damage appears in two extensive areas. The first is the loss of -C from PLK matrix, and the second is the increase in hydrophilic nature involved with the formation of Si-OH terminal bonds and H2O. Both alternations cause the dielectric constant to degrade because of increased density and/or loss of free volume, but the second causes PLK to lose thermal and mechanical stability because Si-OH and H2O act as catalysts for reactions that break the cross-linked backbone. Clearly, both changes in PLK chemistry and bond structure must be addressed in order for any repair method to be favorable. For this reason, Ar plasma treatment with low energy ions is employed to repair the plasma induced damage by creating the desired changes in the film matrix without a significant loss of other properties. Our approach of using inert plasma as a way for damage recovery is motivated by the realization that there is no possibility of chemical reaction with any organic species, driving the energy transfer only from the plasma species towards the respective film matrix. As results, after applying Ar plasma beam treatment followed by annealing on damaged PLK films, the resistance against thermal instability and viscoplastic deformation is found to be improved. Ball indentation depth of the films with Ar plasma process is drastically reduced at the identical condition. More noticeable is the fact that such alternation is converted towards a dehydration reaction under hydrostatic thermal pressure, which causes dielectric constant to decrease and films shrinkage to restore during reconstruction of polymer chains. It is suggested that the immediate event of an Ar plasma beam radiation is to deposit energy from the plasma species (ions, electrons) and this energy input produces the excited state species because Ar cannot chemically react with the film matrix. As a consequence, the radical sites are generated at the less stable area such as colony boundary or pore surface with the decay of the excited species, leading to the production of free radicals by an energy transfer to the bonds which are to be broken. Then, the activated sites experience chemical bond rearrangement by chain-scission, branching, or cross-linking. In our case, crosslink with C is involved with silylmethylene (Si-(CH2)x- Si) groups and it is turned out that some of these groups are converted to methyl groups terminally bonded to siloxane backbone structure under 300~400oC by reaction with -OH, and simultaneously creating a new Si-O-Si crosslink. As an alternative way of increasing the thermo-mechanical reliability, PLK dielectric film with an intrinsically robust structure by controlling pore morphology is fabricated. Since pore surface is susceptible to be damaged by BEOL integration damage, pore morphology in terms of size, distribution, and connectivity should be controlled in order to increase the robustness of PLK dielectrics. Generally, pores in PLK matrix are created by depositing organic fragment (called 'porogen') into the film and removed later by thermal and electron beam cure to form porous PLK layer (; Subtractive deposition). However, during the curing Si-O-Si backbone crosslink is broken and pores are easily interconnected, leading to vulnerable structure to the extrinsic damage. Constitutive deposition approach is feasible for the introduction of smaller nano-pores with little or no interconnectivity by steric hindrance. Due to the closed pore system, thermally-induced stress and plasma-induced damage is restricted merely to the surface of the dielectric film. This is attributed to the stable siloxane (Si-O-Si) backbone and the terminally bonded methyl group attached to silicon (Si-CH3), inducing steric hindrance that lowers the density of the films. The low dielectric constant and mechanical stability are closely involved with the formation of the Si-O-Si cage-like structure and an appropriate combination of stable Si-O-Si, Si-CH3 groups. Based on the FTIR and XPS spectra, it is concluded that the formation of the Si-O-Si cage-like structure was enhanced by structural method. It is believed that all these changes are beneficial for improving PLK stability as will be detailed in this dissertation. Especially, the originality and particular advantage of this study regarding plasma-induced damage repair will be highlighted.

Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Download or read book Interaction Between Plasma and Low k Dielectric Materials written by Junjing Bao and published by . This book was released on 2008 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the scaling of devices, integration of porous ultra low-k dielectric materials into Cu interconnect becomes necessary. Low-k dielectric materials usually consist of a certain number of methyl groups and pores incorporated into a SiO2 backbone structure to reduce the dielectric constant. They are frequently exposed to various plasmas, since plasma is widely used in VLSI semiconductor fabrication such as etching, ashing and deposition. This dissertation is aimed at exploring the interaction between plasma and low-k dielectric surfaces. First, plasma assisted the atomic layer deposition (ALD) of Ta-based Cu barriers. Atomic layer deposition of Ta barriers is a self-limited surface reaction, determined by the function groups on the low-k dielectric surface. But it was found TaCl5 precursor could not nucleate on the organosilicate low-k surface that was terminated with methyl groups. Radical NH[subscript x] beam, generated by a microwave plasma source, could activate the surface through exchanging with the methyl groups on the low-k surface and providing active Si-NH[subscript x] nucleation sites for TaCl5 precursors. Results from Monte Carlo simulation of the atomic layer deposition demonstrated that substrate chemistry was critical in controlling the film morphology. Second, the properties of low-k dielectric materials tended to degrade under plasma exposure. In this dissertation, plasma damage of low-k dielectric surface was investigated from a mechanistic point of view. Both carbon depletion and surface densification were observed on the top surface of damaged low-k materials while the bulk remained largely uninfluenced. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. With a downstream plasma source capable of separating ions from the plasma beam and an in-situ x-ray photoelectron spectroscopy (XPS) monitoring of the damage process, it was clear that ions played a more important role in the plasma damage process. Increase of dielectric constant after plasma damage was mainly attributed to moisture uptake and was confirmed with quantum chemistry calculation. Annealing was found to be effective in mitigating moisture uptake and thus restoring k value. Finally, oxygen plasma damage to blanket and patterned low-k dielectrics was studied in detail. Energetic ions in oxygen plasma contributed much to the loss of film hydrophobicity and dielectric constant through the formation of C=O and Si-OH. Based on results from residual gas analyses (RGA), three possible reaction paths leading to carbon depletion were proposed. This was followed by analytical solution of the evolution of carbon concentration during O2 plasma damage. O2 plasma damage to patterned CDO film was studied by TEM/EELS. And the damage behavior was simulated with Monte Carlo method. It was found that the charging potential distribution induced by plasma was important in determining the carbon loss in patterned low-k films. The charging potential distribution was mainly related to the geometry of low-k trench structures. To recover the dielectric constant, several recovery techniques were tried and briefly discussed.

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry

Download or read book Plasma processing induced Damage Of Thin Dielectric Films written by He Ren and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: In semiconductor industry, material property degradation due to process is a critical factor that limits the device performance. Process-induced damage on a variety of dielectric materials is discussed and measured. Results from various metrologies are packaged and correlated into systematic theory. Charge-induced, chemical, and physical damage source in plasma process environment is identified and optimized. Two sample types of dielectrics are investigated: high-k dielectrics used in device technology and low-k dielectrics as observed in interconnect technology.

Download or read book Characterization and Chemical Recovery of Plasma Damaged Porous Low k SiOCH Dielectric for the Semiconductor Industry written by Thomas Oszinda and published by . This book was released on 2012 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Introduction to Organic Electronic and Optoelectronic Materials and Devices written by Sam-Shajing Sun and published by CRC Press. This book was released on 2016-10-03 with total page 1394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the combined subjects of organic electronic and optoelectronic materials/devices. It is designed for classroom instruction at the senior college level. Highlighting emerging organic and polymeric optoelectronic materials and devices, it presents the fundamentals, principle mechanisms, representative examples, and key data.

Download or read book Plasma Damage on Low k Dielectric Materials written by Yi-Lung Cheng and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for low-k dielectric materials. This is called ,Äúplasma damage,Äù on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

Download or read book Interactions of Plasma Generated Species on Porous Dielectric Thin Films written by Joe Lee and published by . This book was released on 2013 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low pressure plasma processing is used extensively in the semiconductor industry for modern technology. As a result, the understanding of plasma/material interactions is very important to the improvement and design of materials and treatment methods. This dissertation focuses on the understanding of interactions between individual plasma species and materials that are used in the fabrication of the interconnect in semiconductor devices, namely porous low-k dielectrics. Proper insulation of the metal lines in the interconnect relies on maintaining the integrity of the insulator's dielectric properties. As the features of the interconnect are shifting to smaller dimensions, techniques used to implement lower dielectric permittivity have also lowered the material's resistance to plasma-induced damage. As a result, plasma processing of these materials have become a major challenge for future advances in interconnect technology. This study examines specific species generated from typical plasma discharges and their effect on porous low-k materials. The first part of this dissertation studies the mechanism for photon-induced effects and demonstrates the influence of emission wavelength on carbon removal from carbon-doped oxide films. VUV photons emitted from the plasma were observed to break Si-C bonds. However, oxidizing gas species must be present in the background to cause carbon removal. Depending on gas chemistry, VUV photons of different wavelengths are emitted, which affects the depth of the damage penetration into the film. Shorter wavelength emissions are absorbed by the SiO2-like damage layer that is produced after carbon extraction, thereby preventing further removal of carbon. The dissertation continues by examining the effects of photons and radicals individually by isolating the species to obtain separate exposures. By doing so, radicals and photons generated from O2 plasma were observed to remove carbon in different ways, creating different carbon profiles as a function of depth. 130 nm wavelength photons are fairly transparent through the material, leading to a gradual removal of carbon throughout the modification depth. In contrast, oxygen radicals are diffusion-limited, leading to removal of carbon occurring as a front. Modeling of damage effects by these species was performed in each case, and good predictions of their behavior were obtained. However, direct plasma exposures were observed to behave differently, exhibiting much less carbon removal than predicted by the model. Further experimentation found evidence that synergy between photon and radical species led to an effective decrease in the diffusivity of the modified material, reducing subsequent plasma damage. Through fundamental study of plasma/material interactions, the role of photons and radicals in plasma-induced damage has been determined. As a result, treatment methods to reduce plasma damage based on inhibiting these species can be designed. These include plasma filtration techniques, densification by ion bombardment, and the use of plasmas with reducing chemistries. While the scope of this research has focused on interactions with dielectric thin films, these approaches to plasma interactions are relevant to other processes that rely on plasma processing.

Download or read book Evaluation of Ion and Radical induced Degradation of Ultra Low k Dielectric Films written by Mark Adam Goldman and published by . This book was released on 2008 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rational Design of Non damaging Capacitively Coupled Plasma Etching and Photoresist Stripping Processes for Ultralow K Dielectric Materials written by Ming-Shu Kuo and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Silicon Wafer Cleaning Technology written by Karen Reinhardt and published by William Andrew. This book was released on 2018-03-16 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Silicon Wafer Cleaning Technology, Third Edition, provides an in-depth discussion of cleaning, etching and surface conditioning for semiconductor applications. The fundamental physics and chemistry associated with wet and plasma processing are reviewed, including surface and colloidal aspects. This revised edition includes the developments of the last ten years to accommodate a continually involving industry, addressing new technologies and materials, such as germanium and III-V compound semiconductors, and reviewing the various techniques and methods for cleaning and surface conditioning. Chapters include numerous examples of cleaning technique and their results. The book helps the reader understand the process they are using for their cleaning application and why the selected process works. For example, discussion of the mechanism and physics of contamination, metal, particle and organic includes information on particle removal, metal passivation, hydrogen-terminated silicon and other processes that engineers experience in their working environment. In addition, the handbook assists the reader in understanding analytical methods for evaluating contamination. The book is arranged in an order that segments the various cleaning techniques, aqueous and dry processing. Sections include theory, chemistry and physics first, then go into detail for the various methods of cleaning, specifically particle removal and metal removal, amongst others. Focuses on cleaning techniques including wet, plasma and other surface conditioning techniques used to manufacture integrated circuits Reliable reference for anyone that manufactures integrated circuits or supplies the semiconductor and microelectronics industries Covers processes and equipment, as well as new materials and changes required for the surface conditioning process

Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Download or read book The Interactions of Plasma with Low k Dielectrics written by Swayambhu Prasad Behera and published by . This book was released on 2011 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: