Download or read book Physics based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance written by Kiran Kumar Rambappagari and published by . This book was released on 2013 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Download or read book Physics Based Analytical Model for Silicon Carbide Metal Semiconductor Field effect Transistors for Microwave Frequency Applications written by Bodhisattwa Samanta and published by . This book was released on 2013 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Download or read book Physics Based Analytical Model of Silicon Carbide MESFET with Effective Drift Velocity and Mobility written by Rishitej Reddy Byravarapu and published by . This book was released on 2015 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.
Download or read book A Physics Based Frequency Dispersion Model of SiC MESFET written by Srikanth Movva and published by . This book was released on 2018 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Download or read book Large Signal Modeling of Silicon Carbide Submicron MESFET Based on Analytical ion Implanted Physic Based Model written by Yan N. Linn and published by . This book was released on 2013 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ion implantation based analytical model of submicron Silicon Carbide transistor is developed to report large signal model (I-V characteristic) and small signal model (gate source capacitance and gate drain capacitance along with unity gain frequency) with respect to different gate to source voltages and drain to source voltages. The threshold voltage variation with respect to the ion doses is also studied. To minimize the lattice damages during ion implantation process, the shallow channel doping model is proposed. The fitting of compact MESFET structure using Curtice model in advanced design system (ADS) is utilized to create the spice model of transistor for RF and Microwave Power Amplifier circuits' simulator. The maximum available unity gain frequency for the modeled device (gate length: 0.8um with shallow channel) is 67GHz, and the maximum oscillating frequency is 81GHz. The maximum (unmatched) available gain is 14.4dB, 8.7dB, and 3.9dB at 2.4GHz (UHF), 10GHz (SHF), and 52GHz (EHF) respectively. The minimum noise figure of the proposed model is also discussed in this project report.
Download or read book A Fully Analytical Back gate Bias Model for N channel Silicon Carbide MESFETs with Back Channel Implant written by Sushma Malku and published by . This book was released on 2017 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this grad thesis is to develop an analytical model for n-channel MESFET device and understanding the device parameters incorporating the back-gate biasing effect. The device has been structured by n-channel using front and back doping processes. The physics based analytical model of SiC MESFET gave the clear picture of electrostatic potential distribution at any position of channel. The electric field distribution underneath the gate under drain source biasing shows an important properties of electric field distribution. The threshold voltage variations with back gate biasing for different substrate concentration and ion dose have been discussed to study the device properties for switching and frequency performance. The grad thesis incorporate the introduction of the thesis in chapter 1, silicon carbide material in chapter 2, MESFET physics in chapter 3, numerical calculations in chapter 4 and results and discussion in chapter 5.
Download or read book Analytical Modeling of 4H silicon Carbide Based MESFET with Trapping Effects written by Chirayu Shah and published by . This book was released on 2017 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Download or read book Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage controlled Function written by Sitarama Raju Gottumukkala and published by . This book was released on 2013 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.
Download or read book Physics Based Analytical Model of the Frequency Behaviour of 4H SiC MESFET written by Ravi Teja Reddy Garugu and published by . This book was released on 2018 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics based analytical modeling of SiC MESFET has been presented in this grad thesis to evaluate I-V characteristics, and transconductance under traps effects. The impact of grad thesis is to show the traps effects on different electrical parameter because the SiC material is still having adequate defects during growth, which promotes the trap center to degrade the device performance. The traps centers have been considered with different electronic capture cross-section in traps energy level. The drain currents for various gate-source voltage shows significant effect due traps effects, However, I-V characteristics shows a sharp view of linear and non-linear behavior of drain current, which shows no significant effects on switching properties due to the influence of trap centers. Similarly, the transconductance shows significant effect due to traps. The transconductance has been determined for different active channel thickness to study the device performance for power aided efficiency.
Download or read book A Physics based Model of SiC based MESFETs written by Sankha S. Mukherjee and published by . This book was released on 2004 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A physics-based analytical model of the SiC MESFET incorporating trapping and thermal effects is reported. The model takes into account the field and temperature dependencies of carrier transport parameters and carrier trapping effects. Both surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The trapping and detrapping from surface traps control the channel opening at the drain end of the channel that requires the drain resistance to be gate and drain voltage dependent. The substrate traps capture channel electrons at high drain bias when the buffer layer is fully depleted resulting in current collapse at low drain bias in the following I-V trace. The detrapping of the captured electrons is initiated with the increasing drain bias and the channel electron concentration increases which is accelerated by increased thermal effects. As a result, restoration of collapsed drain current is obtained before the trapping effect is reinitiated at high drain bias. The calculated results using the current model are in good agreement with experimental data. A small-signal model for the MESFET has also been proposed. Calculations for the output conductance, the transconductance, the gate-source and gate-drain capacitance has also been presented"--Abstract.
Download or read book Silicon Carbide SiC Based MESFET Similation for High Power and High Frequency Performance Using MATLAB written by Bhavik Patel and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Download or read book Analytical Model of SiC Based Mesfet for Determination of Device Frequency and Noise written by Srikanth Veesam and published by . This book was released on 2016 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.
Download or read book Scaling of an Ion Implanted Silicon Carbide SiC Based MESFET written by Sai Nikitha Rudraraju and published by . This book was released on 2016 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this grad project is to understand the scaling influence of different electrical parameters of Silicon Carbide (SiC) based MESFET by using an analytical model which is calculated using MATLAB software. The device doping concentration, dimension, fabrication have been scaled to conclude the scaling effect on the time-delay, DC output power, threshold voltage, drain-source current and cut-off frequency. The goal of this grad thesis aids the positive influence of scaling effect on device fabrication. It also justifies that few estimated scaling results may get saturated outside some point of scaling in the device. The thesis incorporates the Introduction of the grad thesis in chapter one, Silicon Carbide (SiC) material in chapter two, MESFET physics in chapter three, Scaling rules in chapter four, Numerical equations in chapter five and Results and discussions in chapter six.
Download or read book An Improved Analytical Model of 4H SiC MESFET for Designing the Device for High Frequency and High power Applications written by Janet Arikian and published by . This book was released on 2021 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide is capable of delivering superior physical characteristics under cavil circumstances because of its inherent broad band gap, high critical breakdown field, high thermal conductivity, and high electron situation drift velocity. Due to its superior quality of high power and low loss, 4H-SiC MESFETs are gradually implemented in designing for High frequency and high power, new energy vehicle and locomotive traction, and so on. In this report, an analytical model is developed to evaluate and analyze many device electrical properties, such as I-V characteristics, transconductance including threshold d voltage, gate-to-source, and gate-to-drain capacitances, and specific-on resistance and cutoff frequency. Meanwhile, it presents more approaches to study how the variation of fabrication parameters such as doping energy level and ion dose density impacts the power and frequency performance for 4H-SiC based MESFETs devices. The model has been analyzed to study I-V characteristics, internal gate capacitances (Gate-to-source and gate-to-drain capacitances), transconductance, specific-on resistance, and cutoff-frequency simulation and analysis. The drain-to-source current reveals its variety along with the change of gate-to-source voltages, which goes up to 70A. Secondly, the ion dose intensity Q significantly affects the internal gate capacitances, which is valuable for evaluating the submicron MESFETS gate model performance under a typical fabrication setup. In addition, transconductance simulation results are obtained by the variation with disparate ion dose densities, which is agreeing well with published theoretical and experimental results. Besides, along with the gradual increase of N-drift layer concentration density, the specific-on resistance has reached to a value of 70ohm. μm2which is very promising property of power device. Lastly, the cutoff and maximum frequencies are 14 GHz and 35 GHz, respectively, with the development of fabrication to implement smaller gate length, if the gate length would be available to narrow down to blow 0.5μm, it has the potential to breakthrough 100 GHz to implement the super high-frequency application, which is also observed from the simulation results.
Download or read book A Comprehensive Analytical Model for SiC Based MISFETS written by Architha Mandadi and published by . This book was released on 2015 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional physics based analytical modeling of SiC MISFET has been developed. The drain-source current, transconductance, and gate-source capacitance have been evaluated. The main objective of this project is to study the frequency response through the transconductance and gate-source capacitance. The transconductance and gate-source capacitance have been calculated in the current saturation region to study the frequency response of the MISFET. The frequency response of the devices has been evaluated to study the effect of the physical dimension (gate length and insulator thickness) and gate biasing effect on the frequency behavior of the device. The extracted device characteristics obey similar properties of I-V characteristics and intrinsic parameter of other MISFET devices.
Download or read book A Three Region Analytical Model for Short Channel Silicon Carbide SiC MESFET s written by Rahul Reddy Kambalapally and published by . This book was released on 2013 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an improved analytical model of the three regions in a SiC metal semiconductor field effect transistor(MESFET). The analytical model mainly focuses on two regions in the active channel that are between gate-source and drain-source. The third region gate-drain (which is ungated) is ignored in this analytical model due to the very large potential drop at high drain voltages in a short channel device. In order to improve the accuracy in this model, the parasitic resistance and incomplete ionization of dopants have been incorporated. Considering these effects in the analytical model, a simulation of the current and voltage characteristics and transfer characteristics of the Silicon Carbide MESFET has been developed and discussed in detailed in this thesis.
Download or read book Simulation of Silicon Carbide MESFET Using Analytical Modeling and Synopsis Software for High Power and High Frequency Performance written by Puneet Pandey and published by . This book was released on 2007 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
