Download or read book Physical Understanding and Modeling of Chemical Mechanical Planarization in Dielectric Materials written by Xiaolin Xie (Ph. D.) and published by . This book was released on 2007 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization (CMP) has become the enabling planarization technique of choice for current and emerging silicon integrated circuit (IC) fabrication processes. This work studies CMP in dielectric materials in particular, which is widely used in device formation for isolation and in interconnect formation for dielectric planarization. The physical understanding of the process is essential for CMP tool engineers to design optimal consumables, for circuit engineers to make the layout design manufacturing friendly and for process engineers to better control the process. The major contributions of this work are a framework to study the physics of CMP and physically-based particle-level and die-level models of polishing and planarization. A framework for studying the physics of CMP is established by analyzing the complex system and decoupling the interactions occurring at different scales. A particle- level CMP model is developed that bridges the microscopic polishing mechanisms to the macroscopic properties of the system. A physically-based die-level model is proposed by explicit modeling of the pad and pad surface asperities, with model parameters that are based on the physical properties of the pad rather than purely fitting parameters. A semi-empirical die-level CMP model, motivated by the new physically-based die-level model, is developed that improves upon previous pattern density step-height models by making realistic assumptions and approximations, and improving the ease of computation. The model is applied to simulate polishing of either single- material or dual-material structures with either conventional or non conventional slurries. The die-level models are then applied to engineering problems, including design for manufacturing, nanotopography impact, wafer edge roll-off effects, and motor current based endpoint detection.
Download or read book Integrated Modeling of Chemical Mechanical Planarization for Sub Micron IC Fabrication written by Jianfeng Luo and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
Download or read book Chemical Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses written by Christopher Lyle Borst and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
Download or read book Advances in Chemical Mechanical Planarization CMP written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Download or read book Chemical Mechanical Planarization of Semiconductor Materials written by M.R. Oliver and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.
Download or read book Advanced Modeling of Planarization Processes for Integrated Circuit Fabrication written by Wei Fan (Ph. D.) and published by . This book was released on 2012 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt: Planarization processes are a key enabling technology for continued performance and density improvements in integrated circuits (ICs). Dielectric material planarization is widely used in front-end-of-line (FEOL) processing for device isolation and in back-end-of-line (BEOL) processing for interconnection. This thesis studies the physical mechanisms and variations in the planarization using chemical mechanical polishing (CMP). The major achievement and contribution of this work is a systematic methodology to physically model and characterize the non-uniformities in the CMP process. To characterize polishing mechanisms at different length scales, physical CMP models are developed in three levels: wafer-level, die-level and particle-level. The wafer-level model investigates the CMP tool effects on wafer-level pressure non-uniformity. The die-level model is developed to study chip-scale non-uniformity induced by layout pattern density dependence and CMP pad properties. The particle-level model focuses on the contact mechanism between pad asperities and the wafer. Two model integration approaches are proposed to connect wafer-level and particle-level models to the die-level model, so that CMP system impacts on die-level uniformity and feature size dependence are considered. The models are applied to characterize and simulate CMP processes by fitting polishing experiment data and extracting physical model parameters. A series of physical measurement approaches are developed to characterize CMP pad properties and verify physical model assumptions. Pad asperity modulus and characteristic asperity height are measured by nanoindentation and microprofilometry, respectively. Pad aging effect is investigated by comparing physical measurement results at different pad usage stages. Results show that in-situ conditioning keeps pad surface properties consistent to perform polishing up to 16 hours, even in the face of substantial pad wear during extended polishing. The CMP mechanisms identified from modeling and physical characterization are applied to explore an alternative polishing process, referred to as pad-in-a-bottle (PIB). A critical challenge related to applied pressure using pad-in-a-bottle polishing is predicted.
Download or read book Advanced Interconnects and Chemical Mechanical Planarization for Micro and Nanoelectronics Volume 1249 written by J. W. Bartha and published by . This book was released on 2010-10-05 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Chemical Mechanical Planarization VI written by Sudipta Seal and published by The Electrochemical Society. This book was released on 2003 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Mechanical Planarization of Microelectronic Materials written by Joseph M. Steigerwald and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.
Download or read book Tribological Thermal and Kinetic Characterization of Dielectric and Metal Chemical Mechanical Planarization Processes written by and published by . This book was released on 2005 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation presents a series of studies that describe the impacts of, among other things, temperature and kinematics on inter-level dielectric (ILD) and metal chemical mechanical planarization (CMP) processes. The performance of CMP is often evaluated in terms of removal rate, uniformity, planarization length, step height, defects and resulting topography such as erosion and dishing. The assessment of these parameters is significantly dependent on the selection of tool and consumable set (polishing pad or slurry type), as well as the kinematics involved in the process. Variations in pressure, sliding velocity, temperature and slurry flow rate are just a few of the dynamic inputs that can affect polishing performance. The studies presented in this dissertation focus on some of these external parameters and how they influence the mechanisms involved with the CMP process and their overall outcome on performance. Studies presented in this dissertation include topics such as the effects wafer-ring configurations and wafer geometries on the applied wafer pressure distribution across a wafer surface. In addition to this, another study related to understanding applied wafer pressure investigated the estimation of the effective (envelop) pressure for patterned shallow trench isolation (STI) wafers during CMP. When considering the regularity of issues such as changing wafer geometries and wafer feature patterns, these two studies provided significant insight on the potential issues that could arise during CMP when dealing with such events, as well as potential solutions for controlling such events. Another study in this dissertation investigated the effects of polishing pad type on dielectric CMP performance. Polishing pads varied in thickness and grooving, and tests were done to characterize the tribological and thermal behavior of the pads under a wide range of p 9 V and slurry flow rate conditions. Of key importance in this study was observing any combined effects between changes in platen set point temperature and pad type on ILD removal rate. The greatest contribution to this dissertation involved studies related to the role of temperature in CMP. These studies implemented variable platen set point temperatures to further understand the thermal effects on parameters such as removal rate and coefficient of friction (COF). As a result of these studies, a new removal rate model based on flash heating was developed to describe observed non-linear trends in removal rate. The application of this model has shown great utility in removal rate prediction when compared to prior models.
Download or read book Handbook of Algorithms for Physical Design Automation written by Charles J. Alpert and published by CRC Press. This book was released on 2008-11-12 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical design flow of any project depends upon the size of the design, the technology, the number of designers, the clock frequency, and the time to do the design. As technology advances and design-styles change, physical design flows are constantly reinvented as traditional phases are removed and new ones are added to accommodate changes in
Download or read book Proceedings of the First International Symposium on Chemical Mechanical Planarization written by Iqbal Ali and published by The Electrochemical Society. This book was released on 1997 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Mechanical Polishing in Silicon Processing written by and published by Academic Press. This book was released on 1999-10-29 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Download or read book Advanced Nanoscale ULSI Interconnects Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Developments in Surface Contamination and Cleaning Methods for Surface Cleaning written by Rajiv Kohli and published by William Andrew. This book was released on 2016-11-04 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developments in Surface Contamination and Cleaning: Methods for Surface Cleaning, Volume 9, part of the Developments in Surface Contamination and Cleaning series provide a state-of-the-art guide to the current knowledge on the behavior of film-type and particulate surface contaminants and their associated cleaning methods. This newest volume in the series discusses methods of surface cleaning of contaminants and the resources that are needed to deal with them. Taken as a whole, the series forms a unique reference for professionals and academics working in the area of surface contamination and cleaning. A strong theme running through the series is that of surface contamination and cleaning at the micro and nano scales. Provides a comprehensive coverage of innovations in surface cleaning Written by established experts in the surface cleaning field, presenting an authoritative resource Contains a comprehensive review of the state-of-the-art, including case studies to enhance the learning process
Download or read book Materials Technology and Reliability of Low k Dielectrics and Copper Interconnects written by Ting Y. Tsui and published by . This book was released on 2006 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:
