Download or read book Physical basis of Monte Carlo simulations of ion implantion damage in silicon written by Shiyang Tian and published by . This book was released on 1994 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Results of the Monte Carlo Calculation of One and Two dimensional Distributions of Particles and Damage written by John Albers and published by . This book was released on 1987 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo simulation of ion implantation damage process in silicon written by Shiyang Tian and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2000-08-09 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this jOint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 40 (thesis year 1995) a total of 10,746 thesis titles from 19 Canadian and 144 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 40 reports theses submitted in 1995, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.

Download or read book Monte Carlo simulation of arsenic ion implantation into single crystal silicon written by Shyh-horng Yang and published by . This book was released on 1995 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo simulation of boron ion implantation into single crystal silicon written by Kevin Michael Klein and published by . This book was released on 1991 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling of Ion Implantation and Diffusion in Si written by and published by . This book was released on 1996 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Classical molecular dynamics simulations are used to study damage produced during implantation of semiconductors with different ion masses and energies between 1-25 keV. The time scale for these simulations is only on the order of ns, and therefore problems like transient enhanced diffusion of dopants or formation of extended defects can not be studied with these models. Monte Carlo simulations, including as input the results obtained from molecular dynamics calculations, are used to extend the simulation time, and in particular, to study processes like ion implantation and defects diffusion in semiconductors. As an example, we show results for diffusion of the damage produced by implantation of Si with 5 keV Xe ions at low doses. Results of the simulations are compared with experiments in order to validate the model.

Download or read book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

Download or read book Results of the Monte Carlo Calculation of One and Two Dimensional Distributions of Particles and Damage written by John Albers and published by . This book was released on 1987 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Three dimensional Monte Carlo Simulation of Ion Implantation written by Di Li and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo simulation of ion implantation in crystalline and amorphous materials written by Stimit Kishor Oak and published by . This book was released on 2001 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Download or read book Multi dimensional Monte Carlo simulation of ion implantation into complex structures written by Borna Josip Obradovic and published by . This book was released on 1999 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monte Carlo Simulation for Ion Implantation Profiles Amorphous Layer Thickness Formed by the Ion Implantation and Database Based on Pearson Function written by Kunihiro Suzuki and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Solid Interactions written by Michael Nastasi and published by Cambridge University Press. This book was released on 1996-03-29 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive guide to an important materials science technique for students and researchers.

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination