Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenides written by Kevin Keefer and published by . This book was released on 1985 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Si-, 0- or (Si + 0) - implanted GaAs have been analyzed. Liquid Encapsulated Czochralski (LEC) grown GaAS was implanted with 100 keV silicon ions at a dose of 6 x 10 to the 12th power/sq cm and/or 65 keV oxygen ions at a dose of 1.5 x 10 to the 12th power or 3 x 10 to the 12th power /sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The 0- and (Si+O)- implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAs:Si+O layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAs:Si+O layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition (e, SiAs) in the GaAs:Si layers was quenched in the 400 C annealed GaAs:Si+O layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low resistivity GaAs:Si+O layers annealed at 900 C.
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel Lee DeForest (2LT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).
Download or read book Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide written by Manuel V. Key and published by . This book was released on 1981 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 5 deg photoluminescence (PL) from 1.55 eV to 1.36 eV of semi-insulating bulk GaAs implanted with Si was observed, using the 488 nm line of an argon-ion laser. Implant dosages were 10 to the 12th power, 10 to the 13th power, 10 to the 14th power, and 10 to the 15th power ions/sq cm. Separate sets of samples were annealed at 750 deg C and 900 deg C. The virgin unannealed sample spectrum contained a shallow donor peak at 1.513 eV, a carbon donor-to-carbon acceptor peak at 1.490 eV, a possible carbon donor-to-zinc acceptor peak at 1.487 eV, and an optical phonon peak at 1.454 eV. The virgin annealed sample spectra included, additionally, a vacancy complex-to-silicon acceptor peak at 1.406 eV, a Ga vacancy complex peak at 1.358 eV and a phonon replica at 1.322 eV. The spectra of the implanted unannealed samples showed an increasing quenching of native peaks with increasing dosage, and included no new damage related peaks. The spectra of the implanted samples showed an increase in the native peaks due to annealing but not due to Si dosage increases. The increase in Si dosage caused an increase in low energy broad peaks. A temperature study (5 deg K to 77 deg K), and chemical etching depth resolved study of a sample implanated with 10 to the 15th power ions sq cm and annealed at 900 deg C showed two broads peaks: one near 1.38 eV and one near 1.42 eV. (Author).
Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma (CAPT, USAF.) and published by . This book was released on 1986 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma and published by . This book was released on 1985 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Ge implanted Gallium Arsenide has been analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating Chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 KeV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of Silicon Nitride which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower dose Ge implanted samples, and the Ge donor related peak was found to be dominant in higher dose Ge implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1987 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Studies of Heteroepitaxial Gallium Arsenide on Silicon written by Chen-Jen Huang and published by . This book was released on 1989 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Studies of Selectively Grown Gallium Arsenide on Silicon written by Emmanuil Harlambos Lingunis and published by . This book was released on 1990 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence in Silicon doped Gallium Arsenide written by B. J. Garrard and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Gallium Arsenide Epitaxial Materials written by Jung-Kuei Hsu and published by . This book was released on 1987 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of GaN Implanted with Erbium and Erbium Oxygen written by Lori Everitt and published by . This book was released on 1997-12-01 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: Erbium emits at 1540 nm, which propagates well through fiber optic cables. This work studies the photoluminescence (PL) from GaN, GaN implanted with Er alone, and GaN implanted with both Er and O as functions of excitation laser energy and sample temperature. When the exciton bound to a neutral donor recombined, a photon was emitted at 3.47 eV. A photon emitted at 3.457 eV may have been evidence of the recombination of an exciton bound to a neutral acceptor. Second, the Er-ion transitions were observed in two groups around 0. 805 and 1.25 eV. The PL intensity was measured at four laser excitation wavelengths of 275.4-305.5, 333.6-363.8, 488.0, and 514.5 nm from an Ar-ion laser. Although the PL intensities from GaN:Er were strongest when the sample was excited by the 275.4-305.5 nm multiline, the PL emissions from GaN:Er+O were strongest when excited with the 333.6-363.8 nm line. Regardless, both above and below bandgap laser lines induced strong PL intensities. Third, PL form the two samples was studied as temperature was increased from 2 to 150 K. In general, the intensities of most peaks decreased as temperature was raised in both samples, but the PL signals persist even at 150 K.
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films written by Huelya Birey and published by . This book was released on 1979 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author).
Download or read book Photoluminescence Study of Ion Implntation Damage in Gallium Arsenide written by Manuel V. Key (CAPT, USAF.) and published by . This book was released on 1981 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
