Download or read book Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide written by Manuel V. Key and published by . This book was released on 1981 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 5 deg photoluminescence (PL) from 1.55 eV to 1.36 eV of semi-insulating bulk GaAs implanted with Si was observed, using the 488 nm line of an argon-ion laser. Implant dosages were 10 to the 12th power, 10 to the 13th power, 10 to the 14th power, and 10 to the 15th power ions/sq cm. Separate sets of samples were annealed at 750 deg C and 900 deg C. The virgin unannealed sample spectrum contained a shallow donor peak at 1.513 eV, a carbon donor-to-carbon acceptor peak at 1.490 eV, a possible carbon donor-to-zinc acceptor peak at 1.487 eV, and an optical phonon peak at 1.454 eV. The virgin annealed sample spectra included, additionally, a vacancy complex-to-silicon acceptor peak at 1.406 eV, a Ga vacancy complex peak at 1.358 eV and a phonon replica at 1.322 eV. The spectra of the implanted unannealed samples showed an increasing quenching of native peaks with increasing dosage, and included no new damage related peaks. The spectra of the implanted samples showed an increase in the native peaks due to annealing but not due to Si dosage increases. The increase in Si dosage caused an increase in low energy broad peaks. A temperature study (5 deg K to 77 deg K), and chemical etching depth resolved study of a sample implanated with 10 to the 15th power ions sq cm and annealed at 900 deg C showed two broads peaks: one near 1.38 eV and one near 1.42 eV. (Author).
Download or read book Photoluminescence Study of Ion Implntation Damage in Gallium Arsenide written by Manuel V. Key (CAPT, USAF.) and published by . This book was released on 1981 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).
Download or read book An Optical Investigation of Implantation Damage as GaAs Superlattices written by Kibreab Mebrahtom Haile and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work tunability, implantation damage and recovery of GaAs doping superlattices implanted with hydrogen ions were studied. The applicability of two models of the optical properties of semiconductors was also investigated. GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses of 1012 cm-2, 1014 cm-2 and 1016 cm-2. This gradually modifies their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Such a processing technique therefore provides a convenient way of tuning the optical properties of a superlattice semi-permanently. A combined result of ellipsometry and near infrared reflectance measurements showed that a single effective oscillator as well as a more advanced three-parameter model could be applied to the virgin and ion-implanted doping superlattices. This allowed us to determine the dose dependent effective band gap as well as other model parameters. Photoluminescence as well as normal and resonance Raman techniques were applied to study hydrogen ion implantation damage and its recovery. These techniques showed that implantation damage could be reversed to a large extent by a simple thermal annealing step.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1985 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 1468 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book N Type Doping of Gallium Arsenide by Ion Implantation written by T. Ambridge and published by . This book was released on 1977 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Lattice Damage in Silicon and Gallium Arsenide written by Wesley Harold Weisenberger and published by . This book was released on 1971 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenides written by Kevin Keefer and published by . This book was released on 1985 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Si-, 0- or (Si + 0) - implanted GaAs have been analyzed. Liquid Encapsulated Czochralski (LEC) grown GaAS was implanted with 100 keV silicon ions at a dose of 6 x 10 to the 12th power/sq cm and/or 65 keV oxygen ions at a dose of 1.5 x 10 to the 12th power or 3 x 10 to the 12th power /sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The 0- and (Si+O)- implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAs:Si+O layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAs:Si+O layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition (e, SiAs) in the GaAs:Si layers was quenched in the 400 C annealed GaAs:Si+O layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low resistivity GaAs:Si+O layers annealed at 900 C.
Download or read book Dose Rate Effects on Damage Formation in Ion implanted Gallium Arsenide written by and published by . This book was released on 1990 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: The residual damage in GaAs was measured by ion channeling following implantation of either 100 keV 3°Si at temperatures of 300K or 77K, or 360 keV 12°Sn at 300K. For room-temperature Si implants and fluences between 1 and 10 × 1014 Si/cm2, the amount of damage created was strongly dependent upon the ion current density, which was varied between 0.05 and 12 [mu]A/cm2. Two different stages of damage growth were identified by an abrupt increase in the damage growth rate as a function of fluence, and the threshold fluence for the onset of the second stage was found to be dependent on the dose rate. The dose rate effect on damage was substantially weaker for 12°Sn+ implants and was negligible for Si implants at 77K. The damage was found to be most sensitive to the average current density, demonstrating that the defects which are the precursors to the residual dose-rate dependent damage have active lifetimes of at least 3 × 10−4 s. The dose rate effect and its variation with ion mass and temperature are discussed in the context of homogeneous nucleation and growth of damage during ion irradiation.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 26 (thesis year 1981) a total of 11 ,048 theses titles from 24 Canadian and 21 8 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 26 reports theses submitted in 1981, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
