Download or read book Photoluminescence Study of Indium Alloyed Gallium Arsenide and Gallium Aluminum Arsenide written by David Brian Davito and published by . This book was released on 1986 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Nonlinear Optical Properties of Indium Arsenide gallium Arsenide and Indium Gallium Arsenide gallium Arsenide Self assembled Quantum Dots written by Syed Hassan Shah and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of 100 and 111 grown Indium Gallium Arsenide Strained Single Quantum Wells Under Hydrostatic Pressure written by Toni D. Sauncy and published by . This book was released on 1998 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Gallium Arsenide Aluminum Gallium Arsenide and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition written by John Mark Koons and published by . This book was released on 1994 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al2̣5Ga--̣5As on a GaAs substrate, Al3̣0Ga--̣0As on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al3̣0Ga--̣0As samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characteristics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al2̣5Ga--̣5As and GaSb samples had shown them to be of exceptional quality.

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.

Download or read book Photoluminescence of Heavily Zinc doped Gallium Arsenide and Gallium Indium Arsenide Grown by Low pressure Metal Organic Vapour Phase Epitaxy written by Roberto Benzaquen and published by . This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in the $\rm Ga\sb{0.85}In\sb{0.15}As$ alloy. At high concentrations, the discrete acceptor levels are replace by an impurity band which merges with the valence band above the Mott$\sp{\lbrack 1\rbrack}$ transition. This gives rise to a density of states band tail extending into the gap and containing both extended and localised states. In the presence of such a high density of impurities, potential fluctuations and interparticle interactions result in a band gap shrinkage $\vert \Delta E\sb{g}\vert$ which has been observed with photoluminescence experiments. A model based on the presence of Kane$\sp{\lbrack 2\rbrack}$ band tails and on the assumption of a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of heavily doped layers of GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ in the range of $p=1.6\times 10\sp $ cm$\sp{-3}-p=1.95\times 10\sp{20}$ cm$\sp{-3}.$ This model provided a good description of the experimental results. The 5 K band gap shrinkage has been found to be $\vert\Delta E\sb{g}\vert=2.7\times 10\sp{-8}p\sp{1/3}$ for GaAs and $\vert\Delta E\sb{g}\vert=1.4\times 10\sp{-8}p\sp{1/3}$ for $\rm Ga\sb{0.85}In\sb{0.15}As$ with $\vert\Delta E\sb{g}\vert$ in Ev and p in cm$\sp{-3}.$

Download or read book Photoluminescence Studies in Aluminum doped Gallium arsenide written by Anthony James Alfrey and published by . This book was released on 1979 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence studies of processing induced defects in indium phosphide and gallium arsenide written by Tae Seung Kim and published by . This book was released on 1987 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide Phosphide and Indium Gallium Phosphide written by Russell Dean Dupuis and published by . This book was released on 1973 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Brian John Skromme and published by . This book was released on 1985 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Single Quantum Well Structures in Gallium Arsenide written by Christian A. Bartholomew and published by . This book was released on 2001-03-01 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation and temperature studies were conducted to determine the effects of strain and impurities on band structure in quantum structures. Beryllium-doped indium gallium arsenide (InGaAs:Be) quantum wells, compressively strained to lattice- match gallium arsenide, were studied, and parameters for strained energy gap, heavy hole-light hole split, and acceptor binding energy were evaluated. With the carrier effective masses fixed at accepted values, strain produced a 1.2715 eV energy gap within the well and a heavy hole-light hole split of 23.2meV. Finally, the beryllium binding energy was found to be 22.1 meV measured above the highest valence band (first quantized heavy hole band) at 300 K.

Download or read book Low Temperature Magneto photoluminescence Characterization of High Purity Gallium Arsenide and Indium Phosphide written by Babya Sachi Bose and published by . This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-temperature magneto-photoluminescence is a very powerful technique to characterize high purity GaAs and InP grown by various epitaxial techniques. These III-V compound semiconductor materials are used in a wide variety of electronic, optoelectronic and microwave devices. The large binding energy differences of acceptors in GaAs and InP make possible the identification of those impurities by low-temperature photoluminescence without the use of any magnetic field. However, the sensitivity and resolution provided by this technique remains inadequate to resolve the minute binding energy differences of donors in GaAs and InP. To achieve higher sensitivity and resolution needed for the identification of donors, a magneto-photoluminescence system is installed along with a tunable dye laser, which provides resonant excitation. Donors in high purity GaAs are identified from the magnetic splittings of "two-electron" satellites of donor bound exciton transitions in a high magnetic field and at liquid helium temperature. This technique is successfully used to identify donors in n-type GaAs as well as in p-type GaAs in which donors cannot be identified by any other technique. The technique is also employed to identify donors in high purity InP. The amphoteric incorporation of Si and Ge impurities as donors and acceptors in (100), (311)A and (311)B GaAs grown by molecular beam epitaxy is studied spectroscopically. The hydrogen passivation of C acceptors in high purity GaAs grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) is investigated using photoluminescence. Si acceptors in MBE GaAs are also found to be passivated by hydrogenation. The instabilities in the passivation of acceptor impurities are observed for the exposure of those samples to light. Very high purity MOCVD InP samples with extremely high mobility are characterized by both electrical and optical techniques. It is determined that C is not typically incorporated as a residual acceptor in high purity MOCVD InP. Finally, GaAs on Si, single quantum well, and multiple quantum well heterostructures, which are fabricated from III-V semiconductors, are also measured by low-temperature photoluminescence.

Download or read book Tunneling in the III V Semiconductor Alloys Indium Gallium Phosphide Gallium Aluminum Arsenide and Gallium Arsenide Phosphide written by Harold Wilfred Korb and published by . This book was released on 1971 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Gallium Arsenide Epitaxial Materials written by Jung-Kuei Hsu and published by . This book was released on 1987 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Lattice matched and Strained Indium Gallium Arsenide written by Pallab Bhattacharya and published by Inst of Engineering & Technology. This book was released on 1993 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Download or read book A Comparative Study of Indium arsenide gallium arsenide Short period superlattice and Alloy Quantum well Structures on Gallium arsenide Substrates written by Eel-Jye Roan and published by . This book was released on 1993 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: