Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma (CAPT, USAF.) and published by . This book was released on 1986 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma and published by . This book was released on 1985 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Ge implanted Gallium Arsenide has been analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating Chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 KeV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of Silicon Nitride which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower dose Ge implanted samples, and the Ge donor related peak was found to be dominant in higher dose Ge implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.
Download or read book Electrical Properties and Photoluminescence of Germanium implanted Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1980 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The data presented show that Ge-implanted GaAs has a complex amphoteric behavior which is controlled by the implantation dose, implantation temperature and anneal temperature. Annealing was performed with r.f. plasma deposited Si3N4 as the encapsulant. Implantations at -100 C resulted in p-layers while those performed at 100 C and above resulted in n-layers regardless of the dose and anneal temperature. Room temperature implants resulted in p- or n-layers depending on the combination of dose and anneal temperature. Electrical activation and carrier mobilities in the implanted layers were low. Low temperature (6 K) photoluminescence indicated that a significant amount of residual damage remained after annealing. Carrier concentration profiles in implanted layers and junction characteristics of Ge-implanted GaAs planar diodes are also presented. (Author).
Download or read book Optical Study of Germanium Germanium Plus Arsenic and Germanium Plus Gallium Implants in Gallium Arsenide written by Thomas G. Alley and published by . This book was released on 1987 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence (PL) properties of single implants of Germanium and dual implants of GE+Arsenic or Ge+Gallium into semi-insulating Chromium-doped Gallium Arsenide have been analyzed. Room temperature implantation was performed at 120 keV. When dual implantation was used, samples were implanted at the same dose and energy. Ion doses ranged from 1 x 10 to the 13th power to 1 x 10 to the 15th power/cm2. Samples were encapsulated with Silicon Nitride and then annealed at temperatures ranging from 700 to 950 C. Si3N4 was removed prior to PL measurements. A PL peak due to Ge-acceptors was identified. A bound exciton peak related to Ge-donors was also observed. An acceptor peak due to residual Silicon was found in all samples. The heights of the Ge-acceptor peak and exciton peak were compared to the height of the intrinsic Si-acceptor peak. The height comparison was used in an effort to find trends of Ge-acceptor and Ge-donor transitions as a function of anneal temperature and ion dose.
Download or read book Optical Study of Germanium Germanium Plus Arsenic and Germanium Plus Gallium Implants in Gallium Arsenide written by Thomas G. Alley (1LT, USAF.) and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide written by Manuel V. Key and published by . This book was released on 1981 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 5 deg photoluminescence (PL) from 1.55 eV to 1.36 eV of semi-insulating bulk GaAs implanted with Si was observed, using the 488 nm line of an argon-ion laser. Implant dosages were 10 to the 12th power, 10 to the 13th power, 10 to the 14th power, and 10 to the 15th power ions/sq cm. Separate sets of samples were annealed at 750 deg C and 900 deg C. The virgin unannealed sample spectrum contained a shallow donor peak at 1.513 eV, a carbon donor-to-carbon acceptor peak at 1.490 eV, a possible carbon donor-to-zinc acceptor peak at 1.487 eV, and an optical phonon peak at 1.454 eV. The virgin annealed sample spectra included, additionally, a vacancy complex-to-silicon acceptor peak at 1.406 eV, a Ga vacancy complex peak at 1.358 eV and a phonon replica at 1.322 eV. The spectra of the implanted unannealed samples showed an increasing quenching of native peaks with increasing dosage, and included no new damage related peaks. The spectra of the implanted samples showed an increase in the native peaks due to annealing but not due to Si dosage increases. The increase in Si dosage caused an increase in low energy broad peaks. A temperature study (5 deg K to 77 deg K), and chemical etching depth resolved study of a sample implanated with 10 to the 15th power ions sq cm and annealed at 900 deg C showed two broads peaks: one near 1.38 eV and one near 1.42 eV. (Author).
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel Lee DeForest (2LT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenides written by Kevin Keefer and published by . This book was released on 1985 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Si-, 0- or (Si + 0) - implanted GaAs have been analyzed. Liquid Encapsulated Czochralski (LEC) grown GaAS was implanted with 100 keV silicon ions at a dose of 6 x 10 to the 12th power/sq cm and/or 65 keV oxygen ions at a dose of 1.5 x 10 to the 12th power or 3 x 10 to the 12th power /sq cm. The oxygen ion energy was chosen so that its projected range coincided with that of the silicon ion. The Si-implanted layers were annealed at 850 C for 15 minutes. The 0- and (Si+O)- implanted samples were annealed at 400 C for two hours or 900 C for 15 minutes. Electrical measurements indicated tha GaAs:Si+O layers annealed at 400 C had resistivities four orders of magnitude larger than the Si-implanted layers. In contrast, the resistivity of the GaAs:Si+O layers had increased by only a factor of one and a half when annealed at 900 C. By comparing spectral features of the differently prepared samples as a function of sample temperature as well as depth within the sample, it was found that there was some correlation between the electrical and optical properties of these layers. The free-to-bound transition (e, SiAs) in the GaAs:Si layers was quenched in the 400 C annealed GaAs:Si+O layers, which in turn exhibited relatively high resistivity. However, this particular transition was found in the relatively low resistivity GaAs:Si+O layers annealed at 900 C.
Download or read book Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing written by James H. Walcher and published by . This book was released on 1978 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this study was to characterize experimental laser annealed samples using cathodoluminescence. Ten Cr-doped (SI) GaAs samples were studied. These samples included an unimplanted-unannealed sample, several unimplanted but laser annealed samples, Ge implanted thermally annealed and laser annealed samples, and a Ge implanted unannealed sample. The results indicated the experimental laser annealed samples to be partially or completely unannealed. The laser annealed samples were generally characterized by weak luminescence with peaks at 1.514 eV due to unresolved excitons, 1.488 eV attributed to ZnAs, and 1.469 eV (damage related). It was further observed that in the thermally annealed samples, the dominat peak was noted at 1.488 eV instead of the expected 1.478 eV peak previously associated with Ge. Finally, the unannealed sample spectra emissions were characterized by a 1.493 eV peak attributed to CAs, and in all non-laser annealed samples a 1.36 eV peak attributed to CuGa was observed.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 1332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.
Download or read book Photoluminescence and Electrical Studies of Fluorine and Lithium Implanted Gallium Phosphide and Germanium written by Bryan Stephen Seymour and published by . This book was released on 1982 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects Associated with the Incorporation of Germanium in Gallium Arsenide written by Kevin J. Keefer and published by . This book was released on 1990 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Above and below bandgap excitation studies were performed on Gallium Arsenide samples implanted with Germanium to assess the nature of impurities and defects associated with the incorporation of this element. In addition, dual implanted GaAs samples ((Ge+Ga and Ge+As)) were also investigated to further facilitate the characterization and identification of probable stoichiometric defects. The luminescence results are presented for samples implanted with various doses of ions spanning 1E13-1E15 1/(centimeters squared) at an energy of 120 kilo electron volts, and annealed for 15 minutes at a temperature of 900 deg C. Keywords: Theses, Gallium arsenide, Compound semiconductor devices, Optoelectronic devices, Bandgap excitation studies, Doping, Defects, High temperature, Stoichiometric defects, Vacancies, Interstitials, Antisites. (jg).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
