Download or read book Photoluminescence Study of GaN Implanted with Erbium and Erbium Oxygen written by Lori Everitt and published by . This book was released on 1997-12-01 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: Erbium emits at 1540 nm, which propagates well through fiber optic cables. This work studies the photoluminescence (PL) from GaN, GaN implanted with Er alone, and GaN implanted with both Er and O as functions of excitation laser energy and sample temperature. When the exciton bound to a neutral donor recombined, a photon was emitted at 3.47 eV. A photon emitted at 3.457 eV may have been evidence of the recombination of an exciton bound to a neutral acceptor. Second, the Er-ion transitions were observed in two groups around 0. 805 and 1.25 eV. The PL intensity was measured at four laser excitation wavelengths of 275.4-305.5, 333.6-363.8, 488.0, and 514.5 nm from an Ar-ion laser. Although the PL intensities from GaN:Er were strongest when the sample was excited by the 275.4-305.5 nm multiline, the PL emissions from GaN:Er+O were strongest when excited with the 333.6-363.8 nm line. Regardless, both above and below bandgap laser lines induced strong PL intensities. Third, PL form the two samples was studied as temperature was increased from 2 to 150 K. In general, the intensities of most peaks decreased as temperature was raised in both samples, but the PL signals persist even at 150 K.

Download or read book Photoluminescence Study of GaN Implanted with Erbium and Erbium oxygyn written by Lori R. Everitt and published by . This book was released on 1997 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Spectroscopy of Erbium Implanted Gallium Nitride written by Myo Thaik and published by . This book was released on 1998 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors 19 written by Gordon Davies and published by Trans Tech Publications Ltd. This book was released on 1997-12-11 with total page 1932 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).

Download or read book Photoluminescence Properties of Erbium Doped III V Semiconductors written by Thomas D. Culp and published by . This book was released on 1998 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors ICDS 19 written by Gordon Davies and published by . This book was released on 1997 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty Eighth State of the Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Erbium Doped III V Semiconductors for Optoelectronic Applications written by Sanjay Sethi and published by . This book was released on 1995 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in Semiconductors ICDS 19 written by and published by . This book was released on 1997 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrically Pumped Erbium Pumped Silicon Lasers written by and published by . This book was released on 1995 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare earth doped semiconductors offer the possibility of electrically pumped, efficient, and inexpensive integrated optical amplifiers and CW sources for use in optical communications systems. This final report discusses research into Er doped GaN and Si materials. Cathodoluminescence (CL) measurements have yielded strong Er3+ luminescence in Er and Oxygen implanted GaN films on sapphire and Er and 0 in sapphire. Multiple spectral peaks from the IR, through the visible, and into the near UV have been identified as atomic 4f shell transitions from the Er in sapphire. Photoluminescence (PL) using an Argon laser (514 nm) on one GaN:Er:O sample showed weaker luminescence at 1540 nm. The CL temperature dependence of the 1540 nm peak was found to drop by only a few percent from 6 K to 300 K in the GaN:Er:O. The intensity dropped to 25% of the 6 K value at 380 K. Refractive index measurements of some GaN:Er samples are also presented. Various Er-doped Si samples were studied. Some were implanted with Er while the others were grown epitaxially using chemical vapor deposition. PL of these samples was seen using an 80 mW 980 nm laser diode. (MM).

Download or read book Semiconductors written by and published by . This book was released on 2005 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2018 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Semiconductors Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Download or read book Spectroscopic Properties of Inorganic and Organometallic Compounds written by G Davidson and published by Royal Society of Chemistry. This book was released on 2007-10-31 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: Spectroscopic Properties of Inorganic and Organometallic Compounds provides a unique source of information on an important area of chemistry. Divided into sections mainly according to the particular spectroscopic technique used, coverage in each volume includes: NMR (with reference to stereochemistry, dynamic systems, paramagnetic complexes, solid state NMR and Groups 13-18); nuclear quadrupole resonance spectroscopy; vibrational spectroscopy of main group and transition element compounds and coordinated ligands; and electron diffraction. Reflecting the growing volume of published work in this field, researchers will find this Specialist Periodical Report an invaluable source of information on current methods and applications. Specialist Periodical Reports provide systematic and detailed review coverage in major areas of chemical research. Compiled by teams of leading experts in their specialist fields, this series is designed to help the chemistry community keep current with the latest developments in their field. Each volume in the series is published either annually or biennially and is a superb reference point for researchers. www.rsc.org/spr

Download or read book Luminescence from Erbium Oxide Grown on Silicon written by E. Nogales and published by . This book was released on 2002 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two types of substrates used are explained in terms of the different types of erbium centers formed by taking into account the substrate properties and the thermal treatments during growth. For comparison, erbium implanted and oxygen comparison crystalline and amorphous silicon have been also investigated by luminescence techniques. In the implanted samples, the sharp transitions from erbium ions in the visible range were quenched and the main emission corresponds to the intraionic transitions in Er(3+) ions in the infrared range peaked at 1,54 micrometers.

Download or read book Lanthanoid Series Elements Advances in Research and Application 2012 Edition written by and published by ScholarlyEditions. This book was released on 2012-12-26 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lanthanoid Series Elements—Advances in Research and Application: 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Lanthanoid Series Elements. The editors have built Lanthanoid Series Elements—Advances in Research and Application: 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Lanthanoid Series Elements in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Lanthanoid Series Elements—Advances in Research and Application: 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.