Download or read book Photoluminescence Studies of Recombination Mechanisms in Carbon doped Gallium Arsenide written by Lorraine Calderon and published by . This book was released on 1992 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Studies of Extremely Heavily Carbon Doped Gallium Arsenide written by Bradley John Aitchison and published by . This book was released on 1990 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Studies of Carbon in Semi insulating Gallium Arsenide written by Chin Khuan Teh and published by . This book was released on 1987 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book UV Solid State Light Emitters and Detectors written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2004-05-31 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi cine, dentistry, solid state lighting, displays, dense data storage, and semi conductor manufacturing. One of the most important applications is in sys tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow erful visible high-brightness LEDs and we expect that similar improvements will be achieved in solid-state UV technology.
Download or read book Photoluminescence Studies in Aluminum doped Gallium arsenide written by Anthony James Alfrey and published by . This book was released on 1979 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrochemical Photoluminescence and Surface Studies of the Passivation of Surface Recombination Processes on Chemically Treated Gallium Arsenide Surfaces written by Sharon Ruth Lunt and published by . This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoluminescence Excitation Spectroscopy of Carbon Doped Gallium Nitride written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have done a comparative study of carbon-doped GaN and undoped GaN utilizing photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies in order to investigate deep levels involved in yellow luminescence (YL) and red luminescence (RL). When the GaN was excited by above-bandgap light, red luminescence (RL) centered at 1.82 eV was the dominant below-gap PL from undoped GaN, but carbon-doped GaN below-gap PL was dominated by yellow luminescence (YL) centered at 2.2 eV. When exciting PL below the band- gap with 2.4 eV light, undoped GaN had a RL peak centered at 1.5 eV and carbon-doped GaN had a RL peak centered at 1.65 eV. PLE spectra of carbon-doped GaN, detecting at 1.56 eV, exhibited a strong, broad excitation band extending from about 2,1 to 2.8 eV with an unusual shape that may be due to two or more overlapping excitation bands. This RL PLE band was not observed in undoped GaN. We also demonstrate that PL spectra excited by below gap light in GaN films on sapphire substrates are readily contaminated by 1.6-1.8 eV and 2.1-2.5 eV chromium-related emission from the substrate. A complete characterization of the Cr emission and excitation bands for sapphire substrates enables the determination of the excitation and detection wavelengths required to obtain GaN PL and PLE spectra that are free of contributions from substrate emission.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JETP Letters written by and published by . This book was released on 1989 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: English translation of the Russian journal Pisʹma v zhurnal eksperimentalʹnoĭ i teoreticheskoĭ fiziki. Brief reports covering fundamental theoretical and experimental research in all fields of physics, from solid state to elementary particles.
Download or read book Photoluminescence of Single Quantum Well Structures in Gallium Arsenide written by Christian A. Bartholomew and published by . This book was released on 2001-03-01 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued development of state-of the-art semiconductor technologies and devices by the United States Air Force and the Department of Defense requires accurate and efficient techniques to evaluate and model these new materials. Of particular interest to the Air Force are quantum well structures which can be used for small-scale laser sources in fly-by-light applications, as efficient infrared countermeasures to heat-seeking missiles, or as advanced seekers in optically guided missiles. This thesis provides the initial experimental procedures and data necessary to begin producing accurate yet robust models. Although carrier effective masses could not be evaluated using hot-electron photoluminescence, photoluminescence excitation and temperature studies were conducted to determine the effects of strain and impurities on band structure in quantum structures. Beryllium-doped indium gallium arsenide (InGaAs:Be) quantum wells, compressively strained to lattice- match gallium arsenide, were studied, and parameters for strained energy gap, heavy hole-light hole split, and acceptor binding energy were evaluated. With the carrier effective masses fixed at accepted values, strain produced a 1.2715 eV energy gap within the well and a heavy hole-light hole split of 23.2meV. Finally, the beryllium binding energy was found to be 22.1 meV measured above the highest valence band (first quantized heavy hole band) at 300 K.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Surfaces and Interfaces of Materials Five Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Download or read book Optical Absorption and Photoluminescence of Doped GaAs and InxGa1 x As written by Chung Mou Chang and published by . This book was released on 1964 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: Absorption coefficients near the fundamental absorption edge have been measured in P-type and N-type GaAs with various doping concentrations. With the aid of the principle of detail balance, these measurements were used to predict the spectra of spontaneous emissions under small excitations, and actual photoluminescence spectra were found to follow the predicted spectra closely. The photoluminescence spectra of Mndoped GaAs at several different temperatures were studied. Indium was diffused into doped GaAs to modify the band-gap energy. The photoluminescence spectra and absorption coefficients of the diffused layers were measured. The photoluminescence of the diffused layer was found to be shifted in wavelength by an amount consistent with the indium surface concentration. (Author).
Download or read book Photoluminescence Studies of Heteroepitaxial Gallium Arsenide on Silicon written by Chen-Jen Huang and published by . This book was released on 1989 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
