Download or read book Photoluminescence Studies of Gallium Nitride Thin Films Grown by Electron Cyclotron Resonance assisted Molecular Beam Epitaxy written by Rajminder Singh and published by . This book was released on 1994 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Symposium on Laser Precision Microfabrication written by and published by . This book was released on 2002 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1994 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1828 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Applications of Epitaxial Transition Metal Nitride Thin Film Heterostructures written by John Gilbert Wright and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continued improvements in the efficiency and speed of computation and telecommunication requires leveraging the properties of novel materials and materials interfaces. Superconductivity, a phenomenon that until now has not seen widespread application in microelectronic devices, appears poised for extensive implementation in technologies such as single flux quantum (SFQ) digital logic and Josephson junction-based quantum computing. The development of these technologies requires addressing outstanding materials challenges, such as realizing new materials and devices to enable improvements such as increased circuit density for SFQ circuits and low microwave noise Josephson junctions for enhanced coherence time superconducting qubits. Furthermore, while the existing nitride semiconductor materials have enabled new applications in optoelectronics, power electronics, and RF electronics, the ability to integrate these materials in epitaxial structures containing metallic and superconducting thin film materials creates new dimensions in the design space of semiconductor devices, allowing for the creation of novel devices. With these goals in mind, we have pursued the integration of metallic and superconducting transition metal nitrides, such as NbN and TiN, with III-N semiconductors (AlN, GaN, InN). Firstly, we have studied the growth and properties of NbN and TiN films grown by molecular beam epitaxy. We demonstrate that exceptionally high quality epitaxial thin films of NbN can be grown, and that tuning of the growth variables, such as elemental fluxes and substrate temperature, can control the structural phase and superconducting properties of the resultant NbN films. We demonstrate, for the first-time, phase pure beta-Nb2N thin films of the hexagonal crystal structure, and examine their superconducting and structural properties. Additionally, to better understand the electronic properties of both NbN and NbN/III-N interfaces, we examine the electronic interface between GaN and NbN using both Schottky barrier diodes and SX-ARPES, presenting the k-resolved imaging of the electronic states at this technologically interesting materials interface. To enable the realization of hybrid metal-semiconductor nitride devices, a detailed study of the growth of AlN and GaN on NbN is performed. We demonstrate that lattice misfit, surface energy mismatch, and chemical compatibility all present challenges to the realization of these heterostructures. Through the development of new growth strategies, we overcome these issues and demonstrate the growth of high crystal quality epitaxial AlN thin films grown on NbN. Finally, we utilize these films and heterostructures to fabricate several devices. We demonstrate the utilization of ultra-thin epitaxial NbN to fabricate superconducting nanowire single photon detectors (SNSPD). Utilizing the piezoelectric properties of AlN and the metallic properties of NbN, we fabricate epitaxial bulk acoustic wave (BAW) resonators. Finally, using NbN films as superconducting electrodes and an AlN film as a wide band gap semiconductor, we examine the properties of MBE grown NbN/AlN/NbN Josephson junctions.

Download or read book Science Abstracts written by and published by . This book was released on 1992 with total page 1228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Meeting Abstracts written by Electrochemical Society. Meeting and published by . This book was released on 1996 with total page 1700 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applied Science Technology Index written by and published by . This book was released on 1996 with total page 1100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Canadian Journal of Physics written by and published by . This book was released on 1987 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Film Synthesis and Growth Using Energetic Beams Volume 388 written by H. A. Atwater and published by . This book was released on 1995-10-10 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: With over 16 countries represented, this book represents international developments in the field of film synthesis and growth using energetic beams. It focuses on pulsed-laser deposition. Fundamental issues pertaining to the generation of laser ablation plumes, temperature distributions and collisional effects are described. Ion-assisted pulsed-laser deposition, pulsed-ion deposition, applications of hyperthermal beams and aspects of surface dynamics are discussed. The inclusion of an ion beam with the ablation process leads to some unique modifications in the thin-film growth mechanisms, and hence, film properties. Likewise, the collision of high-mass metal cluster ions with substrates shows promise for growth of novel structures. Also featured are new developments of optoelectronic materials, nitrides and carbon films using a variety of techniques. The effects of beam-induced defects on growth and surface morphology, chemical effects during growth, and characterization of film growth and film properties are addressed.

Download or read book Photoluminescence Study of Gallium Arsenide Aluminum Gallium Arsenide and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition written by John Mark Koons and published by . This book was released on 1994 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al2̣5Ga--̣5As on a GaAs substrate, Al3̣0Ga--̣0As on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al3̣0Ga--̣0As samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characteristics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al2̣5Ga--̣5As and GaSb samples had shown them to be of exceptional quality.