Download or read book Landau Level Spectroscopy written by and published by Elsevier. This book was released on 2012-12-02 with total page 849 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Problems in Condensed Matter Sciences, Volume 27.2: Landau Level Spectroscopy focuses on the processes, reactions, methodologies, and approaches involved in condensed matter sciences, including magnetospectroscopy, resonances, electrodynamics, and magnetic fields. The selection first offers information on the magnetospectroscopy of confined semiconductor systems and the magnetophonon effect in two dimensions. Discussions focus on hot-electron magnetophonon resonance, normal resonances, free carrier states, confined impurities, and electron-phonon interaction. The text then takes a look at the energy spectrum and magnetooptics of band-inverting heterojunctions and the electrodynamics of two-dimensional electron systems in high magnetic fields. The publication examines Landau emission and the Shubnikov-de Haas (SdH) effect. Topics include smooth magnetoresistance and SdH effect, Landau level electronic lifetimes, experimental techniques, and Landau emission in III-IV semiconductors. The book then elaborates on a comprehensive review of the experimental aspects of the SdH effect; magnetoimpurity resonances in semiconductor transport; and magnetophonon resonance. The selection is a highly recommended reference for scientists and readers interested in the Landau level spectroscopy.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Conference on Computers and Devices for Communication written by and published by Allied Publishers. This book was released on 1998 with total page 698 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the 17th International Conference on the Physics of Semiconductors written by J.D. Chadi and published by Springer Science & Business Media. This book was released on 2013-12-01 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1983-11-01 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Scientific Information Bulletin written by and published by . This book was released on 1992 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1975 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Doping in III V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Download or read book Optoelectronic Properties of Inorganic Compounds written by D. Max Roundhill and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended to offer the reader a snapshot of the field of optoelectronic materials from the viewpoint of inorganic chemists. The field of inorganic chemistry is transforming from one focused on the synthesis of compounds having interesting coordination numbers, structures, and stereochemistries, to one focused on preparing compounds that have potentially useful practical applica tions. Two such applications are in the area of optics and electronics. These are fields where the use of inorganic materials has a long history. As the field of microelectronics develops the demands on the performance of such materials increases, and it becomes necessary to discover compounds that will meet these demands. The field of optoelectronics represents a merging of the two disciplines. Its emergence is a natural one because many of the applications involve both of these properties, and also because the electronic structure of a metal compound that confers novel optical properties is often one that also influences its electron transfer and conductivity characteristics. Two of the more important growth areas that have led to these developments are communications and medicine. Within the communications field there is the microelectronics that is involved in information storage and transmittal, some of which will be transferred into the optical regime. Within the medical field there are chemical probes that transmit analytical information from an in vivo environment. This information needs to be readily accessible from an external site, and then quickly converted into images or data that yield accurate and inexpensive diagnoses.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
