Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Download or read book III V Nitrides written by Fernando A. Ponce and published by . This book was released on 1997 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III Nitride Semiconductors written by Hongxing Jiang and published by CRC Press. This book was released on 2002-06-28 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

Download or read book GaN and Related Alloys 2002 Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.

Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 2001 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of 18th Nordic Semiconductor Meeting written by Göran Hansson and published by . This book was released on 1999 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book JJAP written by and published by . This book was released on 1998 with total page 1184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Related Materials Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applied Science Technology Index written by and published by . This book was released on 1997 with total page 2948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride and Related Materials written by and published by . This book was released on 1996 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ultrafast Phenomena in Semiconductors written by and published by . This book was released on 2001 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitrides and Related Wide Band Gap Materials written by A. Hangleiter and published by . This book was released on 1999-08-19 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.