Download or read book Permanent Deactivation of Boron oxygen related Recombination Centres in Crystalline Silicon written by Dominic Christof Walter and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron-oxygen-related defect centres, deactivation, carrier lifetime. - Bor-Sauerstoff-korrelierte Defektzentren, Deaktivierung, Ladungsträgerlebensdauer

Download or read book Boron oxygen related Recombination Centers in Crystalline Silicon and the Effects of Dopant compensation written by Bianca Lim and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Recombination Activity of Metal related and Boron oxygen Defects in Crystalline Silicon written by Zhang Sun and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis aims to improve the understanding of the recombination activity of some metal-related defects and the boron-oxygen (BO) defect in crystalline silicon. First, the recombination parameters of the aluminium-oxygen (Al-O) complex are reassessed by applying lifetime spectroscopy on several n- and p-type Al-contaminated samples. The uncertainty ranges of the recombination parameters have been tightened significantly by simultaneously fitting the lifetimes measured on several differently doped samples. The same method is also applied on several n- and p-type Cr-contaminated samples, to determine the defect parameters of interstitial Cr and CrB pairs. Direct experimental comparisons have shown that both the Al-O defect and Cr have greater negative impacts on carrier lifetimes in p-type silicon than in n-type silicon at low to intermediate injection levels. One approach to reduce the recombination activity of the defects is via hydrogen passivation. The charge state of monatomic hydrogen plays a key role in the passivation process. In this thesis, we describe and apply a rigorous approach to calculating the charge states of monatomic hydrogen, as well as Fe, Cr and the BO defect, as a function of both temperature and injection level. Based on these results, the impact of temperature and injection on the hydrogenation of the key defects, and other pairing reactions, are discussed. In the experimental investigation of the potential hydrogenation of Fe, significant reductions of interstitial Fe concentration are observed in samples passivated with hydrogen-rich silicon nitride films, but not in samples with hydrogen-lean silicon oxide films. We have measured and modelled the Fe reduction kinetics over a wide temperature range, assuming that the reduction is caused by hydrogenation, based on the charge state model. However, a subsequent study has shown conclusively that Fe is gettered by the nitride films. Based on this new finding, the kinetics data are re-analysed in this thesis. For Cu and Ni precipitates, both photoluminescence (PL) images and micro-PL maps are taken on several n-type and p-type wafers in which Cu or Ni has precipitated during the ingot cooling. The high-injection micro-PL measurements significantly reduce the carrier diffusion, allowing more highly resolved inspection of the particles. Markedly different precipitation patterns were observed in n- and p-type samples. The effects of the intrinsic point defect on the precipitation behaviour of the metals, and the dopant effects on the intrinsic point defect concentrations, are discussed based on the results. High-injection micro-PL measurements are also valuable to study the activation kinetics of the BO defect because (a) the activation is significantly accelerated, allowing it to be studied in shorter timeframes, and (b) the injection level can be kept constant over time and in differently doped samples, as the high-injection lifetime is dominated by Auger recombination. This allows the activation time constant and defect concentration in differently doped samples to be compared more directly. Therefore the micro-PL system is used to measure the activation kinetics of the BO defect in compensated n- and p-type silicon. The results obtained under high-injection conditions help to clarify some unresolved issues related to the defect.

Download or read book Chalcogens Advances in Research and Application 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 2783 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chalcogens: Advances in Research and Application: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Chalcogens. The editors have built Chalcogens: Advances in Research and Application: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Chalcogens in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Chalcogens: Advances in Research and Application: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Lifetime Spectroscopy written by Stefan Rein and published by Springer Science & Business Media. This book was released on 2005-11-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.

Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Download or read book Photovoltaic Solar Energy written by Angèle Reinders and published by John Wiley & Sons. This book was released on 2017-01-03 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.

Download or read book Silicon Heterojunction Solar Cells written by W.R. Fahrner and published by Trans Tech Publications Ltd. This book was released on 2006-08-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: The world of today must face up to two contradictory energy problems: on the one hand, there is the sharply growing consumer demand in countries such as China and India. On the other hand, natural resources are dwindling. Moreover, many of those countries which still possess substantial gas and oil supplies are politically unstable. As a result, renewable natural energy sources have received great attention. Among these, solar-cell technology is one of the most promising candidates. However, there still remains the problem of the manufacturing costs of such cells. Many attempts have been made to reduce the production costs of “conventional” solar cells (manufactured from monocrystalline silicon using diffusion methods) by instead using cheaper grades of silicon, and simpler pn-junction fabrication. That is the ‘hero’ of this book; the heterojunction solar cell.

Download or read book Solar Engineering written by American Society of Mechanical Engineers. Solar Energy Division. Conference and published by . This book was released on 2003 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Solar Power Generation written by P. Jayarama Reddy and published by CRC Press. This book was released on 2012-03-22 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a global perspective of the current state of affairs in the field of solar power engineering. In four parts, this well-researched volume informs about:Established solar PV (photovoltaic) technologiesThird-generation PV technologies based on new materials with potential for low-cost large-scale productionSolar cell technology based

Download or read book Solar Engineering 2003 written by Mark D. Thornbloom and published by . This book was released on 2003 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.

Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Impurities in Silicon Device Fabrication written by Klaus Graff and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.

Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

Download or read book New Perspectives on Surface Passivation Understanding the Si Al2O3 Interface written by Lachlan E. Black and published by Springer. This book was released on 2016-04-15 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book addresses the problem of passivation at the surface of crystalline silicon solar cells. More specifically, it reports on a high-throughput, industrially compatible deposition method for Al2O3, enabling its application to commercial solar cells. One of the main focus is on the analysis of the physics of Al2O3 as a passivating dielectric for silicon surfaces. This is accomplished through a comprehensive study, which moves from the particular, the case of aluminium oxide on silicon, to the general, the physics of surface recombination, and is able to connect theory with practice, highlighting relevant commercial applications.

Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.