Download or read book Participation a l etude du comportement electrothermique des IGBT transistors bipolaires a grille isolee written by Francis Calmon and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book PARTICIPATION A L ETUDE DU COMPORTEMENT ELECTROTHERMIQUE DES I G B T TRANSISTORS BIPOLAIRES A GRILLE ISOLEE written by FRANCIS.. CALMON and published by . This book was released on 1995 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: L'ETUDE PORTE SUR LES MECANISMES PHYSIQUES DE COUPLAGE ENTRE LES CARACTERISTIQUES ELECTRIQUES, LA TEMPERATURE DE LA PUCE DE SILICIUM ET LA TECHNOLOGIE DE L'IGBT (EPITAXIEE A COUCHE TAMPON ET REDUCTION DE LA DUREE DE VIE DES PORTEURS OU A CONTROLE DE L'INJECTION DE CHARGES DITE HOMOGENE). LA COMPLEMENTARITE MESURES ET SIMULATIONS ELECTROTHERMIQUES DEUX DIMENSIONS PERMET D'ANALYSER LA VARIATION DE LA CHUTE DE TENSION STATIQUE AVEC LA TEMPERATURE. LA DEPENDANCE DE LA CHARGE STOCKEE AVEC LA TEMPERATURE EST RELIEE AU COEFFICIENT STATIQUE DE TEMPERATURE (DV#C#E/DT). DANS UN HACHEUR SUR CHARGE INDUCTIVE SANS CIRCUIT D'AIDE A LA COMMUTATION, CETTE ETUDE PERMET AUSSI DE COMPRENDRE LA RELATION ENTRE LA PENTE DE TENSION A L'OUVERTURE (DV/DT), LA STRUCTURE DE L'IGBT ET LES CONDITIONS EXPERIMENTALES: RESISTANCE DE GRILLE, TEMPERATURE, NIVEAU DE COURANT. APRES LA DISPARITION DU COURANT ELECTRONIQUE AMENE PAR LE CANAL, LA MONTEE DE LA TENSION AUX BORNES DU DISPOSITIF GENERE L'ETALEMENT D'UNE ZONE DE CHARGE D'ESPACE DANS LA BASE ET CREE UN COURANT INSTANTANE PAR EVACUATION DE LA CHARGE STOCKEE. LA VALEUR DU DV/DT EST TELLE QUE LE COURANT INSTANTANE SE SUBSTITUE AU COURANT ELECTRONIQUE STATIQUE. EN DERNIER LIEU, LE COMPORTEMENT DES IGBT EN COURT-CIRCUIT EST ABORDE. LE MECANISME DE DESTRUCTION DU COMPOSANT EST DETERMINE GRACE A L'ESTIMATION DE LA TEMPERATURE DU SILICIUM PENDANT LA SURCHARGE. L'INJECTION PAR AVALANCHE POUR LA STRUCTURE EPITAXIEE ET L'EMBALLEMENT THERMIQUE PAR GENERATION EXCESSIVE DE PORTEURS INTRINSEQUES POUR LE COMPOSANT A CONTROLE DE L'INJECTION DE CHARGES SEMBLENT ETRE A L'ORIGINE DE LA DESTRUCTION DES DISPOSITIFS ETUDIES DANS CE MEMOIRE

Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.

Download or read book Modern Power Devices written by B. Jayant Baliga and published by Wiley-Interscience. This book was released on 1987-03-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.

Download or read book Power Semiconductor Drives written by P V Rao and published by . This book was released on 2017-02 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Semiconductor devices play a vital role in electrical power systems and are used widely in transmission, distribution and control of electric power. It deals with the fundamentals of machines, converters and control of machines with solid state devices. It is divided into eight chapters covering d.c. motor, single and three phases controlled rectifiers, d.c. motor driver by dual converter, four quadrant drive, d.c. choppers, induction motor with VSI, CSI and cycloconverters, control of induction motors and control of synchronous motors. Features * Each topic is explained lucidly so that the student can understand every aspect of the drive system easily. * Number of worked-out examples are given at the end of each chapter. * A number of quiz type questions are also given with answers after each chapter.

Download or read book Power Electronics written by B. W. Williams and published by . This book was released on 1987 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: