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Book Formation of Aluminum Films on Silicon by Ion Beam Deposition

Download or read book Formation of Aluminum Films on Silicon by Ion Beam Deposition written by and published by . This book was released on 1990 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied the formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40° to 300°C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.

Book Low Energy Ion Assisted Film Growth

Download or read book Low Energy Ion Assisted Film Growth written by Agustin Gonzalez-elipe and published by World Scientific. This book was released on 2003-03-21 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an introductory manual for Ion Assisted Deposition (IAD) procedures of thin films. It is addressed to researchers, post-graduates and even engineers with little or no experience in the techniques of thin film deposition. It reviews the basic concepts related to the interaction of low energy ion beams with materials. The main procedures used for IAD synthesis of thin films and the main effects of ion beam bombardment on growing films, such as densification, stress, mixing, surface flattening and changes in texture are critically discussed. A description of some of the applications of IAD methods and a review of the synthesis by IAD of diamond-like carbon and cubic-boron nitride complete the book.

Book Oriented Aluminum Films on Silicon by Direct Ion Beam Deposition

Download or read book Oriented Aluminum Films on Silicon by Direct Ion Beam Deposition written by R. A. Zuhr and published by . This book was released on 1992 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of metal films on Si at low temperatures is of fundamental interest in thin film physics, as well as a key step in the processing of integrated circuits for microelectronics. If grain size and uniformity could be controlled in the Al metallization used in semiconductor manufacturing, the reliability of such conductors, particularly during thermal cycling, could be greatly improved. One possible way to achieve such control is through the introduction of energy in the form of energetic ions during film growth. The A1 on Si system is especially interesting, not only because A1 is presently the conductor of choice for microelectronics fabrication, but also because the system exhibits unusual interface properties. It has been demonstrated that oriented crystalline A1 films can be grown on Si(111) and Si(100) surfaces at room temperature by the technique of ionized cluster beam deposition (ICB), even though there is a large mismatch in the size of the respective lattices (25%). It is important to determine whether similar oriented growth can be achieved by other thin film deposition techniques and to understand the significant deposition parameters. In this paper we will study the formation of oriented Al films on Si by direct deposition from a low-energy mass-analyzed ion beam.

Book Handbook of Thin Film Deposition

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-06-27 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Resumen: The 2nd edition contains new chapters on contamination and contamination control that describe the basics and the issues. Another new chapter on meteorology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together physical vapor deposition techniques. Two entirely new areas are focused on: chemical mechanical polishing, which helps attain the flatness that is required by modern lithography methods, and new materials used for interconnect dielectric materials, specifically organic polyimide materials.

Book Deposition of Organic Thin Films Using Energy Tunable Molecular Beams on Silicon Dioxide and Octadecyltrichlorosilane Modified Silicon Dioxide

Download or read book Deposition of Organic Thin Films Using Energy Tunable Molecular Beams on Silicon Dioxide and Octadecyltrichlorosilane Modified Silicon Dioxide written by Jared Lynn Mack and published by . This book was released on 2006 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Partially Ionized Beam Deposited Aluminum on Silicon  Interface Reactions and Epitaxy

Download or read book Partially Ionized Beam Deposited Aluminum on Silicon Interface Reactions and Epitaxy written by Radhika Srinivasan and published by . This book was released on 1989 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Solution Deposition of Functional Oxide Thin Films

Download or read book Chemical Solution Deposition of Functional Oxide Thin Films written by Theodor Schneller and published by Springer Science & Business Media. This book was released on 2014-01-24 with total page 801 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.

Book American Doctoral Dissertations

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1990 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Studies of Trap Generation in Silicon Dioxide and Electromigration in Aluminum Thin Films

Download or read book Studies of Trap Generation in Silicon Dioxide and Electromigration in Aluminum Thin Films written by Ann J. Chen and published by . This book was released on 1989 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of HCl on trap generation in SiO$sb2$ film and at Si/SiO$sb2$ interface at high electric fields are studied by avalanche electron injection. A comparison between a 9%-HCl-oxide MOS capacitor and a dry-oxide MOS capacitor shows that HCl decreases the hydrogenation rate of the boron acceptor in the silicon surface layer and increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related, positively-charged electron trap in the oxide is observed and isolated from the chlorine-independent, negatively-charged oxide hole trap. Chlorine also reduces the density of the smaller cross-section oxide electron trap, which gives the turn-around phenomenon. Electromigration in pure aluminum thin film is studied at high-current density and low-test temperature. The resistance of the aluminum line is measured during current stress. The following points are concluded from this study: (1) Due to the thermal resistances of the substrate and the package, the temperature at the thin film surface is higher than that at the ambient. This additional temperature rise has to be corrected in order to compare the data. (2) A damage relaxation is observed when the current is turned off; therefore, the lifetime of pulse operation cannot be obtained by dividing a duty factor from the lifetime of direct current operation. (3) The anode is damaged more seriously than the cathode in our samples.

Book Stress in Ion beam Assisted Silicon Dioxide and Tantalum Pentoxide Thin Films

Download or read book Stress in Ion beam Assisted Silicon Dioxide and Tantalum Pentoxide Thin Films written by Natalia Sirotkina and published by . This book was released on 2003 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Index to American Doctoral Dissertations

Download or read book Index to American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 1252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Handbook of Deposition Technologies for Films and Coatings

Download or read book Handbook of Deposition Technologies for Films and Coatings written by Peter M. Martin and published by William Andrew. This book was released on 2009-12-01 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 3e, edited by Peter M. Martin, PNNL 2005 Inventor of the Year, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. This long-awaited revision includes updated and new chapters on atomic layer deposition, cathodic arc deposition, sculpted thin films, polymer thin films and emerging technologies. Extensive material was added throughout the book, especially in the areas concerned with plasma-assisted vapor deposition processes and metallurgical coating applications.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Profiling and Structural Studies of Ion Beam Mixed Aluminum on Silicon

Download or read book Chemical Profiling and Structural Studies of Ion Beam Mixed Aluminum on Silicon written by F. Namavar and published by . This book was released on 1983 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ion beam mixing technique has been applied to the production of Al-Si thin alloy layers as an alternative method to thermal annealing. Both unimplanted deposited aluminum thin films on silicon substrates and films implanted with energetic xenon ions were studied by Rutherford backscattering, channeling, secondary ion mass spectroscopy, nuclear resonance profiling and scanning electron microscopy techniques. The results of these experiments indicate that (i) intermixing between aluminum and silicon became observable when the implantation dose of energetic xenon through the interface surpassed 2 x 10 to the 16th power ions sq. cm; (ii) intermixing is dependent on the dose but not on the dose rate of implantation; (iii) damage to the silicon substrate extended only to the region penetrated by implanted ions; (iv) the Al-Si alloy layer region is uniform in texture and no segregation can be observed. Moreover, the integrity of the alloy layer is retained for a long period of room temperature annealing.