Download or read book P type Doping of GaN written by Raechelle Kimberly Wong and published by . This book was released on 2000 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Alternative Approaches to P type Doping of GaN written by and published by . This book was released on 2000 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The problem being addressed: p-type doping of GaN. Conventional (column II) acceptors produce low hole concentrations. High hole concentrations are needed for low resistivity p-type material and p-type ohmic contacts.
Download or read book P type Doping of GaN written by and published by . This book was released on 2000 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.
Download or read book Alternative Approaches to P type Doping in GaN and Related Alloys CD ROM written by and published by . This book was released on 2005 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: ELECTRONIC FILE CHARACTERISTICS: 12 files; Adobe Acrobat (.PDF) and Microsoft Word (.DOC). PHYSICAL DESCRIPTION: 1 CD-ROM; 4 3/4 in.; 9.98 MB. ABSTRACT: This grant was issued under the Department of Defense Experimental Program to Stimulate Competitive Research as part of a national effort to develop nationally competitive programs in states that have historically not been successful at obtaining Federal Funding for independent research. In addition, the grant provided funding to both conduct research and to educate scientists and engineers in topics important to national defense. The grant was successful in all three areas. As detailed in this report, we have performed high quality research on fundamental issues of growth and doping in GaN, a strategic material, in addition to training a significant number of students. Finally, several nationally competitive programs were established as a direct result of capabilities developed on this grant. This report describes the research performed on the grant. Much of the research is described in detail in the publications and Ph. D Dissertations appended as part of this document. Thus, the information contained herein will only be summarized in the report. The areas covered in this report can be grouped as follows: 1) Growth Kinetics and Be-doping of GaN. 2) Development of new characterization for GaN and InN. 3) Growth of SiC layers.
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Download or read book The Blue Laser Diode written by Shuji Nakamura and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews of the first edition: "The technical chapters will be lapped up by semiconductor specialists keen to know more [...] the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed." New Scientist
Download or read book Handbook of Nitride Semiconductors and Devices Materials Properties Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Download or read book Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes written by Shuji Nakamura and published by CRC Press. This book was released on 2000-03-09 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
Download or read book Selective Area P type Doping in Gallium Nitride Using Ion Implantation for High Power Applications written by Yekan Wang and published by . This book was released on 2022 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnesium ion implantation and subsequent activation annealing shows promise as an effective p-type doping method in Gallium Nitride (GaN). This dissertation relates implant-induced defects and the electrical performance. The implantation process introduces an elastic strain purely orthogonal to the (0001). Complete strain recovery is achieved by annealing at 1300 °C for 10 min (one GPa N2 overpressure) for dose level up to 1 1015 cm-2. However, extended defects such as stacking faults, dislocation loops, and inversion domains form during the anneal. Critical extended defects in the form of inversion domains were found to contain electrically inactive Mg after annealing at temperatures of 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. A key finding of this work was to demonstrate that annealing at temperatures above 1300 °C eliminates the presence of the Mg-rich inversion domains. While other residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis shows no sign of Mg segregation at dislocation loops or other defects. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Electrical measurements show that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C, which points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures (e"1400 °C) annealing cycles to activate Mg acceptors. Novel characterization methods combining high resolution x-ray scattering and transmission electron microscopy were developed to understand the implant-induced strain recovery process and the evolution of extended defect structures after the dopant activation anneal. It was found that homoepitaxial GaN on high quality native substrates is necessary for clearly assessing the implant-induced defects by separating them from the pre-existing intrinsic defects. Results from this work are expected to bring the understanding of the key processing steps to achieve high activation efficiency selective area p-type doping for vertical GaN device structures in a scalable framework
Download or read book P and N type Implantation Doping of GaN with Ca and O written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: III-N photonic devices have made great advances in recent years following the demonstration of doping of GaN p-type with Mg and n-type with Si. However, the deep ionization energy level of Mg in GaN ([approximately] 160 meV) limits the ionized of acceptors at room temperature to less than 1.0% of the substitutional Mg. With this in mind, the authors used ion implantation to characterize the ionization level of Ca in GaN since Ca had been suggested by Strite to be a shallow acceptor in GaN. Ca-implanted GaN converted from n-to-p type after a 1,100 C activation anneal. Variable temperature Hall measurements give an ionization level at 169 meV. Although this level is equivalent to that of Mg, Ca-implantation may have advantages (shallower projected range and less straggle for a given energy) than Mg for electronic devices. In particular, the authors report the first GaN device using ion implantation doping. This is a GaN junction field effect transistor (JFET) which employed Ca-implantation. A 1.7[micro]m JFET had a transconductance of 7 mS/mm, a saturation current at 0 V gate bias of 33 mA/mm, a f[sub t] of 2.7 GHz, and a f[sub max] of 9.4 GHz. O-implantation was also studied and shown to create a shallow donor level ([approximately] 25 meV) that is similar to Si. SIMS profiles of as-implanted and annealed samples showed no measurable redistribution of either Ca or O in GaN at 1,125 C.
Download or read book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.
Download or read book Ultra High P doping Material Research for GaN Based Light Emitters written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 1019 cm−3. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.
Download or read book Reliability Investigation of LED Devices for Public Light Applications written by Raphael Baillot and published by Elsevier. This book was released on 2017-03-09 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability Investigation of LED Devices for Public Light Applications focuses on state-of-the-art GaN-based LED technology through the study of typical failure mechanisms in public lighting applications. Across the different chapters, the reader will explore the tools and analyses involved in the study and application of a number of different LED devices. The authors review GaN-based LED technology by focusing on the main failure mechanisms targeting polymer-based packaging, thanks to electrical and spectral models. The proposed technology and methodologies will help those interested in the topic to further their knowledge of failure mechanisms, exploring the physical and chemical analyses involved. - Based on the work of two main Phd results in 2011 and 2014 - Describes GaN technology in the state-of-the-art, focusing on the specific electrical and spectral model - Proposes the technology and methodologies to understand failure mechanisms
Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Download or read book Brief van Achatus de Dohna 1581 1647 aan Andr Rivet 1572 1651 written by and published by . This book was released on 1645 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Light Emitting Diodes 4th Edition 2023 written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2023-03-11 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition was published in 2006. The 3rd edition was published in 2018. The current edition, the 2023 edition, is the most recent update of the book. The book is a thorough discussion of LEDs, particularly its semiconductor physics, electrical, optical, material science, thermal, mechanical, and chemical foundations. The book presents many fundamental aspects of LED technology and includes an in-depth discussion of white light-emitting diodes (LEDs), phosphor materials used in white LEDs, packaging technology, and the various efficiencies and efficacies encountered in the context of LEDs. The background of light, color science, and human vision is provided as well. The fully colored illustrations of the current edition are beneficial given the prominent role of light and color in the field of LEDs. The current edition is published in electronic PDF format in order to make the book affordable and easily accessible to a wide readership.
Download or read book Processing and Properties of Compound Semiconductors written by and published by Elsevier. This book was released on 2001-10-20 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
