Download or read book Optimizing the Temperature Profile During Sublimation Growth of SiC Single Crystals written by Christian Meyer and published by . This book was released on 2003 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Temperature Phenomena During Sublimation Growth of Silicon Carbide Single Crystals written by Olaf Klein and published by . This book was released on 2002 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals by Physical Vapor Treatment written by Jeffrey B. Allen and published by . This book was released on 2011 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Download or read book Near Thermal Equilibrium Growth of 4H 6H and 15R silicon Carbide Single Crystals written by Norbert Schulze and published by . This book was released on 2001 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation and Convection Driven Transient Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals written by and published by . This book was released on 2000 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth of SiC Crystals from Vapor by the Bridgman Stockbarger Method written by Juris Smiltens and published by . This book was released on 1974 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.
Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Download or read book On the Synthesis of SiC Single Crystals written by Yoshizō Inomata and published by . This book was released on 1972 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A method is proposed to synthesize SiC single crystals free of carbon particle inclusions. An empty graphite crucible is connected with the crucible containing silicon melt by means of a graphite pipe. The former crucible is heated to approximately 2,500°C, as in the ordinary sublimation process, while the temperature of the latter is lowered. Crystal growth is accomplished in the empty crucible. The experiments conducted are preliminary. Problems such as damages to the crucible containing silicon melt, prevention of silicon leak, and control of the amount of silicon supply to the growth cavity are examined. The structure of the furnace necessary for the implementation of the method is discussed.
Download or read book Transient Numerical Investigation of Induction Heating During Sublimation Growth of Silicon Carbide Single Crystals written by Olaf Klein and published by . This book was released on 2001 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Relation Between Growth Temperature and the Structure of SiC Crystals Grown by the Sublimation Method written by Yoshizō Inomata and published by . This book was released on 1969 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The relationship between growth temperature and the polytypes of SiC crystals has been studied experimentally at 2200 degrees C to 2600 degrees C under conditions of low supersaturation. The results are summarized as follows: (1) In the present experiment, excluding one example in which the 4 H-type was involved, the structure of all crystals consisted of the 6 H-, 15 R- and other long c-period types exceeding 21. Of the elemental structures of SiC, 2 H, 3 C, 4 H, 15 R, 6 H, and 21 R, only 6 H and 15 R were found. (2) In the range of 2200 degrees C - 2600 degrees C, 6 H and 15 R have the most thermal stability among the structures considered as elemental. However, the effect of impurity in the crystal and the shift from stoichiometry were neglected. (3) The relative amount of 15 R increased with decreasing temperature while 6 H showed the opposite tendency.
Download or read book Transient Numerical Study of Termperature Gradients During Sublimation Growth of SiC written by and published by . This book was released on 2005 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using a transient mathematical heat transfer model including heat conduction, radiation, and radio frequency (RF) induction heating, we numerically investigate the time evolution of temperature gradients in axisymmetric growth apparatus during sublimation growth of silicon carbide (SiC) bulk single crystals by physical vapor transport (PVT) (modified Lely method). Temperature gradients on the growing crystal's surface can cause defects. Here, the evolution of these gradients is studied numerically during the heating process, varying the apparatus design, namely the amount of the source powder charge as well as the size of the upper blind hole used for cooling of the seed. Our results show that a smaller upper blind hole can reduce the temperature gradients on the surface of the seed crystal without reducing the surface temperature itself.
Download or read book Crystal and Epitaxial Growth written by V. Alexander Stefan, Editor and published by Stefan University Press. This book was released on 2002 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Download or read book Silicon Carbide and Related Materials 2004 written by Roberta Nipoti and published by Trans Tech Publications Ltd. This book was released on 2005-05-15 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Download or read book Transient Numerical Simulation of Sublimation Growth of SiC Bulk Single Crystals written by Peter Philip and published by . This book was released on 2003 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2009-07-31 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
