Download or read book Optical Characterization of Bulk Gallium Arsenide Using Fourier Transform Infrared Spectroscopy written by Shangju Yang and published by . This book was released on 1992 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Characterization of Semiconductors written by Sidney Perkowitz and published by Elsevier. This book was released on 2012-12-02 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial scientists with specific problems in semiconducting materials; for academic scientists who wish to apply their spectroscopic methods to characterization problems; and for students in solid state physics, materials science and engineering, and semiconductor electronics and photonics, this book provides a unique overview, bringing together these valuable techniques in a coherent wayfor the first time. Discusses and compares infrared, Raman, and photoluminescence methods Enables readers to choose the best method for a given problem Illustrates applications to help non-experts and industrial users, with answers to selected common problems Presents fundamentals with examples from the semiconductor literature without excessive abstract discussion Features equipment lists and discussion of techniques to help establish characterization laboratories
Download or read book Optical Characterization of Epitaxial Semiconductor Layers written by Günther Bauer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.
Download or read book Optical and Electrical Characterization of Melt Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys written by Jean Wei and published by . This book was released on 2012-10-29 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new method to determine semiconductor bandgap energy directly from the easily measured transmission spectra was developed. The method was verified using many binary semiconductors with known properties and utilized to determine the unknown ternary semiconductors were determined at various wavelengths and temperatures. Photoluminescence and Hall-effect measurement were performed to identify various electronic transitions, as well as sample quality. The determination of electrical and optical properties of the material will provide important addition to the database of material properties for future optoelectronic device applications. In the near future, newer materials and their applications need to be developed, and often binary and ternary III-V compounds (GaSb, GaP, GaSbP etc.) can be studied using the method developed in this work.
Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book Design and Optical Characterization of Gallium Arsenide Aluminum Arsenide Material System Reflective Modulators for Mid infrared Free Space Optical Applications Using Solid source Molecular Beam Epitaxy written by Stanley Ikpe and published by . This book was released on 2013 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the ever-growing usage of free space optical communication implementations, new innovations are currently being made to help improve the quality of transmission of these systems. One particular method employed to help improve transmission efficiency of optical links is shifting the transmission wavelength into the mid-infrared spectrum. Studies have shown sufficient increase in atmospheric transmission at and around mid-infrared wavelengths (near 3-5 mm). In order to successfully implement such systems at these wavelengths, devices must first be designed that are capable of optical communication operation at such wavelengths. One such device common in modern free space optical systems is the reflective modulator. This device minimizes the pointing and tracking associated with establishing free space optical connections. In this dissertation, a free space optical reflective modulator is designed using Gallium Arsenide and Aluminum Arsenide (GaAs/AlAs) to operate at midinfrared transmission wavelengths. The reflective modulator consists of multiple quantum well modulator (QWM) atop of a distributed Bragg reflector (DBR). The physical device characteristics are analyzed and the device functionality evaluated using optical characterization techniques.
Download or read book FY US Air Force Plan for Defense Research Sciences written by and published by . This book was released on 1985 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fourier Transform Infrared Absorption Spectroscopy in Semi insulating Gallium Arsenide written by Mahmud Farag Musbah and published by . This book was released on 1984 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Optical Characterization of Processed Gallium Arsenide written by Ramon Alfredo Carvalho Siochi and published by . This book was released on 1990 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fifth International Symposium on Long Wavelength Infrared Detectors and Arrays Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1997 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical Characterization for Semi insulating Gallium Arsenide microform written by Yu Zhang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Bulk Materials And Characterizations written by Osamu Oda and published by World Scientific. This book was released on 2007-04-18 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semi Insulating Gallium Arsenide written by and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project was established 11-18-92 to continue for 12 months. Its purpose has been electrical and optical characterization of samples from semi-insulating (SI) melt-grown crystals of gallium arsenide (GaAs). As a further definition of the project's purpose, the primary goal has been to assist NRL in assessing the properties of SI GaAs crystals grown at NRL, by the vertical zone melt (VZM) method. A second aspect of this characterization work has involved samples from SI GaAs crystals grown by various commercial vendors, including samples of pre-synthesized GaAs evaluated for its suitability as starting 'feedstock' for VZM growth. Measurements made at Western Washington University (WWU) under the terms of this project accord with a Statement of Work provided at the outset. These have included (a) low-field dc electrical transport data for SI GaAs samples, as functions of temperature; (b) near-infrared (NIR) transmittance/absorption spectra of polished slabs, with data concerning the well-known EL2 defect determined from NIR absorption strength and spectral form; (c) mid-IR data on absorption caused by carbon acceptors in SI GaAs.
Download or read book Bulk Crystal Growth of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2005-10-31 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa
