Download or read book Optical Characterization and Growth Investigation of Ga adsorbate Mediated GaN AlN Quantum Dot Heterostructures by Plasma assisted Molecular Beam Epitaxy written by Jay Steven Brown and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: The III-nitride semiconductors are attractive for a variety of electronic and optoelectronic applications, due to the large band-gap range (0.7 to 6.2 eV), high carrier mobility, and chemical stability. Spontaneous and piezoelectric polarization give rise to large internal electric fields in GaN/AlN heterostructures and are interesting for fundamental investigations and device applications. Quantum dots (QDs) are intensely studied for use as optical emitters in diverse applications ranging from quantum communications to enhancing the performance of conventional diodes and lasers because of their atomic-like density of states, enhanced free carrier capture, and tunable electronic bound states.
Download or read book Structural and Optical Properties of GaN based Heterostructures Grown by Plasma Assisted Molecular Beam Epitaxy written by Kyu-Hwan Shim and published by . This book was released on 1997 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Assisted Molecular Beam Epitaxy Growth and Cathodoluminescence Study of GaN AlN Distributed Bragg Reflector Nanorod Structure written by 何承穎 and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy Growth and Characterization of GaN AlN and AlGaN GaN Heterostructures written by Stefan Davidsson and published by . This book was released on 2005 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nucleation of GaN AlN Quantum Dots written by and published by . This book was released on 2003 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, bidimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, the height and the density of the islands increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth [R.E. Rudd et al., Phys. Rev. Lett. 90, 146101 (2003)].
Download or read book The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of GaN Nanocolumns Deposited by Plasma assisted Molecular beam Epitaxy written by Ananya Debnath and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation addresses GaN nanocolumns (NCs) growth on Si (111) via a SixNy intermediate layer by radio-frequency molecular-beam epitaxy. In the existing literature, the GaN NC’s morphology was shown to be influenced by growth parameters such as Ga flux, substrate type, growth temperature, buffer layer types, sticking coefficient of Ga adatoms in different planes, etc. The one aspect that so far has been understudied is the role of the plasma-generated species. Due to the multiple states and concentrations of the available excited species in a nitrogen plasma, it has been difficult to quantify and correlate their role with the morphology of the resulting NCs. To address this issue, the nitrogen plasma source has been investigated by optical emission spectroscopy, in order to quantify the relative abundances of the molecular and atomic nitrogen species, and then to examine the effect of these species on the growth morphology and mechanism of GaN NCs grown on Si (111). The length, diameter, and density of NCs were analyzed as a function of the nitrogen species Cmol/Cat concentration ratio during epitaxy. Growth rate and diameter are found to increase and density to decrease up to a certain value of Cmol/Cat nitrogen ratio but plateaued beyond that. The effect of the Cmol/Cat nitrogen ratio seems to be an additional factor that has to be taken into account in the modeling of GaN NC growth. The structural and optical characterization of GaN NCs by PL, XRD, and RHEED show that GaN NC samples are strained. This strain decreases with increasing Cmol/Cat ratio. The growth mechanism of the GaN NCs was investigated in terms of Cmol/Cat ratio using the SEM and TEM results. Under our growth conditions, the NC growth appeared to be driven by direct impingement of adatoms rather than diffusion. The NCs have a core shell structure where the difference in growth rate of shell and core diminishes as Cmol/Cat ratio increases, which results in NCs with different radial growth rates.
Download or read book Growth and Characterization of GaN based Thin Film Grown by Plasma assisted Molecular Beam Epitaxy for Spintronics and Optoelectronics Application written by and published by . This book was released on 2013 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of GaN Grown on Silicon by Plasma Assisted Molecular Beam Epitaxy written by 李品頤 and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Characterization of GaN Nanorods Grown on Si 111 Substrate by Plasma assisted Molecular Beam Epitaxy written by and published by . This book was released on 2004 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure Morphology and Kinetics of GaN Film Growth Using Gas source and RF Plasma assisted Metal organic Molecular Beam Epitaxy written by Arthur Randall Woll and published by . This book was released on 2000 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN Growth by RF plasma Assisted Molecular Beam Epitaxy written by Brenda VanMil and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MBE Growth and Characterization of Zincblende GaN and GaN AlN Structures written by J. Song and published by . This book was released on 1997 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Program includes fundamental studies of Molecular beam epitaxial (MBE) growth of GaN and its related alloys and heterostructures. In additions, the optical and electrical properties of resultant materials were measured using a variety of spectroscopic techniques. The optical properties concentrated on optically-pumped stimulated emission and laser action in GaN/AlGaN heterostructures. The objective was to better understand the underlying physics of MBE growth, and the optical and electrical properties for GaN-based device application. 1.
Download or read book Investigations of the GaN AlN and InN Semiconductors Structural Optical Electronic and Interfacial Properties written by and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Described in this thesis is an investigation of some fundamental physical properties of both zincblende and wurtzite Group III - Nitride wide bandgap semiconductor materials. All of the thin films studied were grown by plasma-enhanced molecular beam epitaxy on either GaAs and SiC substrates. This growth method proved to be suitable for nitride expitaxial growth although compromises between the plasma power and the crystal growth rate had to be sought. The zincblende polytypes of GaN and InN were studied with the intent of evaluating their potential as a wide bandgap semiconductor system for short wavelength optical devices. The metastability of these crystals has led us to the conclusion that the zincblende nitrides are not a promising candidate for these applications due to their tendency to nucleate wurtzite domains. Bulk samples of zincblende GaN and InN and wurtzite GaN, AlN and InN were studied by x-ray photoemission spectroscopy (XPS) in an effort to determine their valence band structure. We report the various energies of the valence band density of states maxima as well as the ionicity gaps of each material. Wurtzite GaN/AlN and InN/AlN heterostructures were also investigated by XPS in order to estimate the valence band discontinuities of these heterojunctions. We measured valence band discontinuities of deltaEv(GaN/AlN) = 0.4 +/- 0.4 eV and deltaEv(InN/AlN) = 1.1 +/- 0.4 eV. Our results indicate that both systems have heterojunction band lineups fundamentally suitable for common optical device applications.
Download or read book Epitaxial Growth of AlGaN GaN Heterostructure by Plasma assisted Molecular Beam Epitaxy for High Electron Mobility Transistor Applications written by 黃延儀 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of High Mobility AlxGa1 xN GaN Heterostructures Grown by Plasma assisted Molecular Beam Epitaxy written by 陳彥良 and published by . This book was released on 2010 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of GaN Thin Film and AlGaN based Quantum Well Structure by Plasma assisted Molecular Beam Epitaxy for Optoelectronics Application written by 碩廷·尤 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book AI Ga In N Heterostructures Grown Along Polar and Non polar Directions by Plasma assisted Molecular Beam Epitaxy written by Patrick Waltereit and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
