Download or read book Optical and Structural Properties of Er3 Doped GaN Grown by MBE written by and published by . This book was released on 1999 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N2. The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5 x 10(exp 21) atoms/cu cm accompanied by a high oxygen impurity concentration.

Download or read book Optical and structural properties of Tm3 Eu3 and Er3 doped GaN thin films grown by MBE technology written by Georgios Halambalakis and published by . This book was released on 2005 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les propriétés optiques des couches épitaxiées de GaN dopées aux terres rares ont attiré l'attention pour des applications optoélectroniques tels que la signalisation, [la] lumière blanche et [les] communications optiques. Nous avons étudié les propriétés optiques et structurales des couches minces de GaN dopées aux terres rares (Er3+, Eu3+, Tm3+), réalisées par GSMBE (Gas Source Molecular Beam Epitaxy). La totalité du spectre de la lumière visible a été observé, du GaN:Eu (Rouge : 622 nm) au GaN:Tm (Bleu : 477 nm), en passant par le GaN:Er (Vert : 537 nm, 558 nm). La diffraction de rayons X a été utilisée pour étudier la qualité cristalline des couches. La microscopie électronique en transmission (TEM) a été utilisée pour étudier les défauts dus à l'incorporation d'ions de terres rares dans la matrice de GaN. Des mesures AFM ont aussi été utilisées pour étudier les effets de la température de croissance et de la concentration de terres rares sur la morphologie de la surface des couches dopées. Les études structurales sur les couches de GaN dopées aux terres rares ont montré que les défauts participent au mécanisme de transfert d'énergie de la matrice vers les ions de terres rares, ce qui accroît l'émission de lumière relative aux transitions intra-4f des terres rares, observées par photoluminescence.

Download or read book GaN and Related Alloys Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

Download or read book Growth and Morphology of Er Doped GaN on Sapphire and Hydride Vapor Phase Epitaxy Substrates written by and published by . This book was released on 1999 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. The emission spectrum of the GaN:Er films consists of two unique narrow green lines at 537 and 558 nm along with typical Er31 emission in the infrared at 1.5 micrometers. The narrow lines have been identified as Er31 transitions from the 2H(sub 11/2) and 4S(sub 3/2) levels to the 4I(sub 15/2) ground state. The morphology of the GaN:Er films showed that the growth resulted in either a columnar or more compact structure with no effect on green light emission intensity.

Download or read book GaN and Related Alloys written by and published by . This book was released on 1999 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Light Emitting Materials and Control of Their Emission Properties for Applications in Integrated Optics written by Carl Bernard Poitras and published by . This book was released on 2006 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical and Structural Properties of Er doped GaN InGaN Materials and Devices Synthesized by Metal Organic Chemical Vapor Deposition written by Cristofer Russell Ugolini and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The optical and structural properties of Er-doped GaN/InGaN materials and devices synthesized by metal organic chemical vapor deposition (MOCVD) were investigated. Er-doped GaN via MOCVD emits a strong photoluminescence (PL) emission at 1.54 um using both above and below-bandgap excitation. In contrast to other growth methods, MOCVD-grown Er-doped GaN epilayers exhibit virtually no visible emission lines. A small thermal quenching effect, with only a 20% decrease in the integrated intensity of the 1.54 um PL emission, occurred between 10 and 300 K. The dominant bandedge emission of Er-doped GaN at 3.23 eV was observed at room temperature, which is red-shifted by 0.19 eV from the bandedge emission of undoped GaN. An activation energy of 191 meV was obtained from the thermal quenching of the integrated intensity of the 1.54 um emission line. It was observed that surface morphology and 1.54 um PL emission intensity was strongly dependent upon the Er/NH3 flow rate ratio and the growth temperature. XRD measurements showed that the crystalline ordering of the (002) plane was relatively unperturbed for the changing growth environment. Least-squares fitting of 1.54 um PL measurements from Er-doped GaN of different growth temperatures was utilized to determine a formation energy of 1.82 " 0.1 eV for the Er-emitting centers. The crystalline quality and surface morphology of Er-doped InGaN (5% In fraction) was nearly identical to that of Er-doped GaN, yet the PL intensity of the 1.54 um emission from Er-doped InGaN (5% In fraction) was 16 x smaller than that of Er-doped GaN. The drop in PL intensity is attributed to the much lower growth temperature in conjunction with the high formation energy of the Er- emitting centers. Er-doped InGaN grown at fixed growth temperature with different growth pressures, NH3 flow rates, and Ga flow rates was also investigated, and showed that increased In fractions also resulted in a smaller 1.54 um PL intensity. Er-doped InGaN p-i-n diodes were synthesized and tested. The electroluminescence (EL) spectra under forward bias shows strong Er based emission in the infrared and visible region. The different emission lines from EL spectra in contrast to PL spectra implies different excitation methods for the Er based emission in the p-i-n diode than in the PL excited epilayer.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structural and Optical Properties of GaN based Heterostructures Grown by Plasma Assisted Molecular Beam Epitaxy written by Kyu-Hwan Shim and published by . This book was released on 1997 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical and Optical Properties of Carbon doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source written by and published by . This book was released on 2002 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 102° cm−3) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ((almost equal to)6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

Download or read book Structural Optical and Electrical Characterisation of MBE Grown Erbium Doped GaAs Si and Si X Ge 1 x written by H. Efeoglu and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Proceedings of the 3rd International Winter Workshop on Spectroscopy and Structure of Rare Earth Systems written by and published by . This book was released on 2000 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Investigation of Structural Electrical and Optical Properties of Doped Dilute GaAsBi Grown by Molecular Beam Epitaxy written by Sultan Alhassan and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductors written by and published by . This book was released on 2003-07 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt: English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt: