Download or read book Ohmic Contacts to the Wide Band Gap Semiconductor Gallium Nitride and to Aluminum Gallium Nitride gallium Nitride Heterostructures written by Michael Lee Schuette and published by . This book was released on 2005 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: To meet temperature and process latitude requirements for ohmic contacts to n-GaN and to AlGaN/GaN heterostructures, a low-temperature copper germanide ohmic contact with a wide processing window was designed and applied to moderately-doped n-GaN achieving [rho]c = 1.1 x 10−5 [omega] cm2 (and Rc x W = 0.26 [omega] mm) and AlGaN/GaN heterostructures achieving [rho]c = 1.6 x 10−4 [omega] cm2 (and Rc X W = 3.6 [omega] mm). It was determined that SiCl4 RIE at low self-bias smooths the n-GaN surface while at high bias the roughness increases only slightly. Core level analysis showed that ion bombardment of n-GaN reduced surface oxidation and increased the concentration of N vacancies at the surface, both of which correlated well with [rho]c's measured via I-V. Auger depth profiling showed that after annealing, both N and Ga diffused out of the GaN and Ge and Cu diffused in. The change in Ge in-diffusion due to annealing, when compared to the as-deposited contact, was greater than that of Cu. The Auger and X-ray photoemission data support the assertion that the ohmic behavior of the copper germanide ohmic contact on n-GaN is due to electron tunneling, which is enhanced by a heavily doped interfacial region created by VN and Ge on VGa, both of which serve as donors in n-GaN. The physical mechanism which provides ohmic contact to AlGaN/GaN heterostructure is similar to that of the n-GaN case with respect to the contamination removal, nitrogen vacancy creation, and germanium occupation of gallium vacancies. However, it is important that the AlGaN layer not be etched such that the source of carriers from this layer for use in the 2DEG channel is depleted. Comments addressing future work that should be done to improve this contact system and allow its use for self-aligned high-electron mobility transistors (HEMTs) are made.

Download or read book A Study of Aluminum Gallium Nitride gallium Nitride Polarization Barriers Aluminum Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development and Characterization of Ohmic and Schottky Contacts for Gallium Nitride and Aluminum Gallium Nitride Devices written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride Processing for Electronics Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and published by World Scientific. This book was released on 2019-12-10 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Download or read book Proceedings of the First Symposium on III V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1996 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ohmic Contacts to N type Gallium Nitride Based Semiconductors written by Deepak Selvanathan and published by . This book was released on 2004 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Integrated Electronics on Aluminum Nitride written by Reet Chaudhuri and published by Springer Nature. This book was released on 2022-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 32 (thesis year 1987) a total of 12,483 theses titles from 22 Canadian and 176 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 32 reports theses submitted in 1987, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental of Microwave Radar Engineering written by K K Sharma and published by S. Chand Publishing. This book was released on 2011 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: For B.E./B.Tech. Students. This book is intended as an introductory text on MICROWAVE and RADAR ENGNEERING. The fundamentals priciple on microwave theory and techniques are thoroughly expalined in the simplest language. IT contains comprehensive up-to-date text for a standard course on transmission lines, waveguides, passive waveguide components, ferrite devices, microwave tubes, microwave semiconductor devices, microwave measurements, microwave antennas, and various microwave communication systems. This book also covers the RADAR system and microwave propogation at length. This written text is supplemented with a large number of suitable diagrams, photographs and a good number of solved examples for better understanding of subject.