Download or read book Numerical Modeling of Vapor Behavior in Effusion Sources Used in Thin film Deposition Processes written by Mark J. Pavol and published by . This book was released on 2002 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Direct Simulation Monte Carlo Modeling of Effusion Source Vapor Plumes Used in Thin film Deposition Processes written by Brandon D. Morrison and published by . This book was released on 2002 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman Washington Loney and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme. Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as the reactor is axially traversed. The approach used avoids the sometimes cumbersome numerical schemes, while dealing effectively with non-integer order rate expressions characteristic to CVD kinetics. This approach is also amenable to higher order rate expressions such as kCn, n> 1. We employ a boundary perturbation technique to reduce a nonlinear system of partial differential equations that was otherwise non-tractable analytically. Essentially, analytical expressions are derivable for the concentration profile in the interwafer region regardless of the kinetic expression's non-linearity. The proposed model was tested with independently published experimental data. In each case the model predictions compare favorable with the experimental data. Results show that deposition rates of: silicon nitride from dichlorosilane and ammonia, silicon from silane and silicon dioxide from tetraethylorthosilicate can be explained using a shifting order reaction. Further, the neglect of gas phase reactions did not affect the predicted deposition rates. Concurrence with experimental results on thickness uniformity (radial) is achieved using this model. Control of nonuniformity on the wafers during a CVD process depends on the magnitude of the Sherwood number. Both experimental data and the proposed model show that surface uniformity improves with diminishing Sherwood numbers. In this work, it is demonstrated (at least qualitatively) that surface chemical reaction provides the controlling resistance. For the range of concentrations and low pressures used in CVD the interwafer Damkzh̲ler number is smaller than unity. If the ratio of reaction velocity to diffusion velocity is larger than unity, uniform surface deposition cannot be expected. This implies the surface process is controlling.
Download or read book Principles of Vapor Deposition of Thin Films written by Professor K.S. K.S Sree Harsha and published by Elsevier. This book was released on 2005-12-16 with total page 1173 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. Principles of Vapor Deposition of Thin Films brings in to one place a diverse amount of scientific background that is considered essential to become knowledgeable in thin film depostition techniques. Its ultimate goal as a reference is to provide the foundation upon which thin film science and technological innovation are possible. * Offers detailed derivation of important formulae. * Thoroughly covers the basic principles of materials science that are important to any thin film preparation. * Careful attention to terminologies, concepts and definitions, as well as abundance of illustrations offer clear support for the text.
Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by Thomas John Jasinski and published by . This book was released on 1992 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Control of Thin Film Growth in a Chemical Vapor Deposition Reactor written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work describes the development of a mathematical model of ahigh-pressure chemical vapor deposition (HPCVD) reactor and nonlinearfeedback methodologies for control of the growth of thin films in thisreactor. Precise control of the film thickness and composition is highlydesirable, making real-time control of the deposition process veryimportant. The source vapor species transport is modeled by the standardgas dynamics partial differential equations, with species decomposition reactions, reduced down to a small number of ordinary differential equationsthrough use of the proper orthogonal decomposition technique. This systemis coupled with a reduced order model of the reactions on the surfaceinvolved in the source vapor decomposition and film deposition on thesubstrate wafer. Also modeled is the real-time observation technique usedto obtain a partial measurement of the deposition process. The utilization of reduced order models greatly simplifies the mathematical formulation of the physical process so it can be solved quickly enough to beused for real-time model-based feedback control. This control problem isfairly complicated, however, because the surface reactions render the modelnonlinear. Several control methodologies for nonlinear systems are studiedin this work to determine which performs best on test examples similar tothe HPCVD problem. One chosen method is extended to a tracking control toforce certain film growth properties to follow desired trajectories. Thenonlinear control method is used also in the development of a stateestimator which uses the nonlinear partial observation of the nonlinearsystem to create an estimate of the actual state, which the feedback controlformula then can use to guide the HPCVD system. The nonlinear trackingcontrol and estimator techniques are implemented on the HPCVD model and theresults analyzed as to the effectiveness of the reduced order model andnonlinear control.
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman W. Loney and published by . This book was released on 1991 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by Thomas J. Jasinski and published by . This book was released on 1992 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling Tools for Chemical Vapor Deposition written by National Aeronautics and Space Adm Nasa and published by Independently Published. This book was released on 2018-11-07 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities. Jasinski, Thomas J. and Childs, Edward P. Unspecified Center...
Download or read book New Methods Mechanisms and Models of Vapor Deposition written by Haydn N. G. Wadley and published by Cambridge University Press. This book was released on 2014-06-05 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vapor deposition is increasingly used to synthesize thin films and coatings that underpin numerous technologies from microelectronics to aircraft engines. As the structural and compositional complexity of these vapor-deposited materials increases, many new methods of vapor deposition have been developed. The design of which is founded upon an understanding of the atomic-scale mechanisms of growth. This book, first published in 2000, explores these issues and their applications in micro- and magnetoelectronics, hard coatings, photovoltaics, high-Tc thin films and the group-three nitrides. It is organized so that many of the new methods of vapor deposition are introduced first. This is followed by chapters on vapor deposition including the use of in situ characterization techniques to observe them and exploration of modeling techniques to simulate the growth of vapor-deposited structures. The use of in situ sensors to validate simulations is also widely covered. This provides a detailed view of the state of the art and should be beneficial to all who are engaged in its research and development.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling Validation and Control of Advanced Chemical Vapor Deposition Processes written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: AASERT supported work on the following: Modeling of multiple layer stacks in thin film growth; Modeling of energy input terms in electromagnetic excitation of materials; PRS monitoring of multiple layer stacks in thin film growth; construction and testing of a prototype high pressure organometallic chemical vapor deposition (HPOMCVD) reactor; Reduced order surface kinetic models for GaP growth; computational methods for feedback control in nonlinear systems.
Download or read book High Pressure Chemical Vapor Deposition and Thin Film Thermal Flow Process Simulations written by Hang Liao and published by . This book was released on 1995 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mathematical Methods for Thin Film Deposition Simulations written by International Business Machines Corporation. Research Division and published by . This book was released on 1995 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "The mathematical foundation and numerical algorithms for continuum models of thin film deposition processes are discussed. Calculations of topography evolution for thin film deposition may be divided into two parts: evaluation of surface velocities and advancement of the surface. In the first half of this paper, we present the theory of surface advancement. If the surface velocities are given, then the surface evolution is governed by the Hamilton-Jacobi-type equation with appropriate 'entropy conditions'. The entropy conditions are used to select the physically plausible surface evolution among all possible solutions to the Hamilton-Jacobi-type equation. The shock-tracking algorithm, which selects the correct solution using the entropy conditions, is also presented in detail. In the latter half of the article, etch/deposition rates (i.e., surface velocities) are derived for dry processes, based on the collisionless kinetic theory. Some representative examples of numerical simulations are also presented."
Download or read book Multi scale Modeling of Chemical Vapor Deposition written by Jonathan Jilesen and published by . This book was released on 2009 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multi-scale modeling of chemical vapor deposition (CVD) is a very broad topic because a large number of physical processes affect the quality and speed of film deposition. These processes have different length scales associated with them creating the need for a multi-scale model. The three main scales of importance to the modeling of CVD are the reactor scale, the feature scale, and the atomic scale. The reactor scale ranges from meters to millimeters and is called the reactor scale because it corresponds with the scale of the reactor geometry. The micrometer scale is labeled as the feature scale in this study because this is the scale related to the feature geometries. However, this is also the scale at which grain boundaries and surface quality can be discussed. The final scale of importance to the CVD process is the atomic scale. The focus of this study is on the reactor and feature scales with special focus on the coupling between these two scales. Currently there are two main methods of coupling between the reactor and feature scales. The first method is mainly applied when a modified line of sight feature scale model is used, with coupling occurring through a mass balance performed at the wafer surface. The second method is only applicable to Monte Carlo based feature scale models. Coupling in this second method is accomplished through a mass balance performed at a plane offset from the surface.
Download or read book Multiscale Modeling of Thin Film Deposition Processes written by Gwang-Soo Kim and published by . This book was released on 2002 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) A reactor scale model is developed based on the Galerkin finite element method. The model includes momentum transport, transient mass transport, potential distribution and detailed surface kinetic mechanisms. The experimental film thickness uniformity on the blank wafer with commercial electrochemical deposition cell is compared with the simulation result. The reactor scale model is used to investigate the various effects on the film thickness uniformity including terminal effects and mass transport effects. The analysis shows the qualitative difference between two effects and how they can be eliminated. Also, the reactor scale simulation tool is used to model the pulse plating process. Improved performance of the pulse plating over the constant current operation suggests that the relaxation period is the critical parameter that determines the film thickness uniformity. A computationally efficient feature scale model is developed. Mass transport, potential distribution and detailed surface reactions are included in the model ...
Download or read book Semi empirical and Numerical Modeling of Metal organic Chemical Vapor Deposition written by Ziba Nami and published by . This book was released on 1996 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
