Download or read book Nucleation and Growth of GaN on GaAs 001 Substrates written by and published by . This book was released on 1999 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.
Download or read book MBE Growth and Initial Nucleation Kinetics of GaN on GaAs 100 Substrates written by Mark Lee O'Steen and published by . This book was released on 1995 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nucleation and Growth of Gan Islands by Molecular Beam Epitaxy written by Ka-Yan Pang and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Nucleation and Growth of GaN Islands by Molecular-beam Epitaxy" by Ka-yan, Pang, 彭嘉欣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled NUCLEATION AND GROWTH OF GaN ISLANDS BY MOLECULAR-BEAM EPITAXY Submitted by PANG Ka Yan for the degree of Master of Philosophy at The University of Hong Kong in November 2005 Gallium Nitride (GaN) has attracted a lot of attention recently due to its wide energy band gap (3.39 eV) and high breakdown field (3.3 x 10 V/cm). These properties make GaN a promising candidate for high-temperature, high-power electronics and blue and green light-emitting device applications. Due to the lack of bulk GaN crystal, the material is usually grown epitaxially on foreign substrates. There is still much room for improvement for the quality of epitaxial GaN. It is known that GaN grown under excess-Ga flux conditions have a smooth surface, but the kinetics of film growth under such conditions remains unknown. The goal of this research was to study the kinetic processes of island nucleation and GaN growth during molecular-beam epitaxy (MBE). By examining nucleation island density, N, as a function of substrate temperature, T, the surface diffusion energy barrier, E, was derived. The scaling property of the island size distributions for different coverage was also revealed. It was found that the surface diffusion energy barrier of adatoms on the excess-Ga covered surface is 0.70 eV, assuming the critical island size for nucleation is 2, which agrees with the theoretical value. On the other hand, island size distributions at different coverage exhibit the scaling property, where the critical island size for nucleation is one under the conditions of experiments (i.e., Ga/N 1). DOI: 10.5353/th_b3677654 Subjects: Gallium nitride Nucleation Molecular beam epitaxy
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Download or read book Advances in III V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Download or read book Compound Semiconductors 1995 Proceedings of the Twenty Second INT Symposium on Compound Semiconductors held in Cheju Island Korea 28 August 2 September 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Download or read book 24th International Conference on the Physics of Semiconductors written by David Gershoni and published by World Scientific. This book was released on 1999 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of this important conference consist of plenary and invited papers published in hard copy and CD-ROM versions. The contributed oral and poster presentations are included in the CD-ROM version only.
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book GaN and Related Alloys Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-17 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Download or read book Microelectronics Microsystems And Nanotechnology Papers Presented Of At Mmn 2000 written by Androula G Nassiopoulou and published by World Scientific. This book was released on 2001-10-19 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers.
Download or read book Microelectronics Microsystems and Nanotechnology written by Androula G. Nassiopoulou and published by World Scientific. This book was released on 2001 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers.
Download or read book JJAP written by and published by . This book was released on 2005 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
