Download or read book Novel Reactor Design and Method for Atmospheric Pressure Chemical Vapor Deposition of Micro and Nano SiO2 x Films in Photovoltaic Applications written by Esmail Issa and published by BoD – Books on Demand. This book was released on 2022-01-01 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: A laboratory-scale reactor and a novel method for the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-x films are developed. The deposited films are investigated to synthesize heterogeneously upon the substrate surface with the elimination of the so-called gas-phase reaction, hence preventing parasitic oxide particles upon the substrate surface and the reactor inner walls. The films are extensively inspected in terms of chemical and optical properties and utilized for crystalline silicon solar cell applications. Simple reactor design with low safety measures, a wide range of deposition rates, high film resilience, and stability for the intended applications are successfully achieved. The newly developed APCVD SiO2-x is proven to protect the Si wafer surface against texturing in alkaline and acidic solutions. Electroplated metallization schemes of heterojunction and passivated emitter rear contact solar cells are examined with the use of the SiO2-x as a masking layer in the grid electrode-free area.
Download or read book Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition written by Kyle William Johnson and published by . This book was released on 2011 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Optimization of a High Throughput Chemical Vapor Deposition System for Depositing Thin Films of Iron Pyrite for Photovoltaic Applications written by Jason von Wilpert and published by . This book was released on 2013 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: Iron pyrite (FeS2) is a promising material to act as the light absorbing layer in a thin film solar cell. This thesis focuses on the design and optimization of a chemical vapor deposition (CVD) chamber capable of depositing iron pyrite thin films by the reaction of iron acetylacetoneate and tert-butyl disulphide in argon at 300 oC at a base pressure ranging from 10 mTorr to 760 Torr. A custom, as-built 5" CVD system is first characterized by performing experiments attempting to deposit thin films of iron pyrite at a base pressure of 10 mTorr. After initial efforts are unsuccessful, a series of modifications are made to the system, and experiments at both low and atmospheric pressure are pursued. It is found that an external chamber for the iron acetylacetoneate precursor is necessary for better control over its vapor pressure, and that the growth rate must be slow to deposit homogeneous films. Optimal results at atmospheric pressure are achieved when the flow lines of the TBDS vapor, iron acetylacetoneate vapor, and argon carrier gas are combined prior to the deposition chamber.
Download or read book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor written by Matthew T. Smith and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of an Ultra low Cost Inductively coupled Plasma Chemical Vapor Deposition Tool for Micro and Nanofabrication written by Parker Andrew Gould and published by . This book was released on 2019 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high cost of semiconductor fabrication equipment has traditionally represented a large barrier to entry for groups seeking to develop or commercialize novel micro- and nanoscale devices. Much of the cost barrier stems from the large size of the substrates processed in this equipment, and the associated complexity of maintaining consistent operation across the full substrate area. By scaling the substrate size down from the 150-300 mm diameter sizes commonly seen in today's production environments, the capital cost and physical footprint of tools for micro- and nanoscale fabrication can be dramatically decreased, while still retaining a similarly high level of performance. In this work, an ultra-low cost inductively-coupled plasma chemical vapor deposition (ICPCVD) system for processing substrates up to 50.8 mm (2") in diameter is presented. The ICPCVD system is built within a modular vacuum tool architecture that allows sections of the full tool to be easily and inexpensively replaced to adapt to new processing conditions or provide additional functionality. The system uses a non-pyrophoric mixture of silane (1.5% in helium) and low substrate temperatures ( : 150*C) to deposit uniform silicon-based films with a high quality comparable to films deposited in research-grade commercial tools. Using response surface methods, the performance of the ICP-CVD system has been characterized for both silicon dioxide and silicon nitride films, and repeatable control of the deposited film properties, including deposition rate, index of refraction, film stress, and density, has been demonstrated.
Download or read book Low Temperature Atmospheric Pressure Chemical Vapor Deposition of Group 14 Oxide Films written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Development of a Low Pressure Chemical Vapor Deposition Reactor for Growth of Cubic 3C Silicon Carbide written by Michael Peter Orthner and published by . This book was released on 2006 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Engineering of Microreactor and Smart Scaled Flow Processes written by Volker Hessel and published by MDPI. This book was released on 2018-10-08 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Design and Engineering of Microreactor and Smart-Scaled Flow Processes" that was published in Processes
Download or read book Low pressure Chemical Vapor Deposition by Thermolysis of Disilane for Low temperature Fabrication of Pn Junction Solar Cells written by Daniel D. Pates and published by . This book was released on 2006 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-pressure chemical vapor deposition (LPCVD) reactor was built in order to implement a low-temperature process to deposit thin-films of silicon and fabricate pn junction photovoltaic devices using disilane as the source gas. This work represents the first reported work on using disilane for fabrication of photovoltaic devices. Films doped with diborane showed high growth rates of approximately 45-150 Å/min for temperatures ranging from 450 to 550 °C. Undoped films were grown and found to have significantly lower growth rates and were not practical at temperatures less than 500 °C. The films were completely amorphous for growth temperatures of less than 500 °C, and crystallinity increased sharply above 500 °C. The optical properties of the films exhibited low optical bandgaps of approximately 1.4-1.1 eV. The conductivity of the doped films was found to be on the order of 10−3 S/cm. Devices were fabricated by depositing p-type layers on n-type crystalline silicon substrates to form pn junctions. Diodes and pn junction photovoltaic devices were fabricated, exhibiting modest but promising performance, and were limited by parasitic series resistance. This research represents the first reported work on fabricating pn junction photovoltaic devices in a low-temperature LPCVD process using disilane, and serves as a solid foundation for future work to improve the process and fabricate novel device structures.
Download or read book Deposition Mechanisms and Profile Modeling of SiO2 Films Deposited by Low Pressure Chemical Vapor Deposition written by Lie-Yea Cheng and published by . This book was released on 1991 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition Modeling in a Non confined Circular Impinging Jet Reactor at Atmospheric Pressure written by Charles L. Leakeas and published by . This book was released on 2001 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reactor Design for Chemical Vapor Deposition written by Stephen J. Cottrell and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition of GaAsl x superscript P x Reactor Design and Growth Kinetics written by Saleem Anwar Shaikh and published by . This book was released on 1972 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book High Pressure Chemical Vapor Deposition written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of next generation devices for high speed switching, high efficiency energy conversion, spintronic devices require the development of advanced material systems. While conventional group IV, group II-VI and group III-V based materials systems have served as a base material in many modern device structures, they posses fundamental materials properties that limit their suitability in next generation device structures. The group III-N material system is very promising for the development of advanced device structures. GaN is currently widely used in high efficiency lighting applications. However, the development of this material system has been limited to material systems with limited indium. The growth of high indium concentration materials such as InN and GaxIn1-xN has proven difficulty due to the high thermal decomposition pressure of InN. In response to this difficulty, a high pressure chemical vapor deposition reactor system has been developed for the growth of InN which enables elevated processing temperatures as compared to conventional low-pressure growth techniques. The design criteria and implementation of this unique design is presented here. In addition, the results of in-situ real time optical characterization capabilities of this reactor system are presented as applied to thermal characterization, flow dynamics, gas phase kinetics and surface reactions. Ex-situ InN thin films grown on sapphire substrates and GaN epilayers have been analyzed by x-ray diffraction, transmission spectroscopy and raman spectroscopy. These results indicated single crystal indium nitride films with an optical absorption edge which varies between 0.7 and 1.9 eV as a function of precursor flow stoichiometry.
Download or read book Novel Process and Apparatus Design for Metalorganic Chemical Vapor Deposition MOCVD of Superconducting Thin Films written by Brian Norio Hubert and published by . This book was released on 1996 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Study and Kinetic Modelling of Chemical Vapor Deposition Process of Silicon Oxide and Oxynitride Thin Films for Aqueous Corrosion Barriers written by Konstantina Christina Topka (docteur en génie des procédés).) and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The deposition of silica-based materials is widely used in numerous industrial sectors, including microelectronics, food packaging, gas separation and pharmaceutics. Depending on the targetapplication, these materials are required to fulfil specific requirements in terms of mechanical properties, durability, and composition. The implementation of such coatings in pharmaceutics applications require, more specifically, good aqueous barrier and anti-diffusion properties, as well as effective corrosion resistance. The hydrolytic resistance and the durability of the coatings is directly linked to the level of densification of the ceramic network. In the case of amorphous SiO2, an improved network cross-linking, and by consequence densification, can be induced through the partial replacement of the O2- anions by N3- (or C4-) ones, producing denser amorphous silicon oxynitride (SiOxNy) or silicon oxycarbide (SiOxCy) coatings that can meet the performance requirements dictated by the various pharmaceutical applications. However, very little information is available in the literature concerning the deposition of SiOxNy coatings in accordance to the application-specific constraints: namely the production of chemically inert films on complex, 3D substrates, deposited at atmospheric pressure and at moderate temperatures (
