Download or read book Non Volatile Memories Based on Silicon Dots written by Isodiana Crupi and published by LAP Lambert Academic Publishing. This book was released on 2010-12 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our daily life tells us that new technologies are continuously developed. Personal computer, cellular phones, digital camera, mp3 player pervade our life. Looking into the recent past, electronic devices have been proliferated reduced in the size and improved in the performances. Since memories are present in almost every electronic system, these technological advances depend on the development of the semiconductor memory itself. Since the very beginning of such development, the information in conventional non volatile memory device can be stored in a conductive floating gate or in an insulating layer such as in MNOS. Over the years the memory market has been continuously increasing and this has led, in the 1995, to the introduction of a new memory cell based on discrete traps. It was already clear at that point that the realization of such memory cell would be difficult. The scientific community is still very uncertain about the questions whether, and how such device could work. Since then, there has been a lot of progress in the field of memory cell based on discrete traps, but the basic questions about the real advantages offered by such memory devices are still open today.
Download or read book Silicon Non Volatile Memories written by Barbara de Salvo and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Download or read book Silicon Based Unified Memory Devices and Technology written by Arup Bhattacharyya and published by CRC Press. This book was released on 2017-07-06 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Download or read book Photo Electroactive Non Volatile Memories for Data Storage and Neuromorphic Computing written by Su-Ting Han and published by Woodhead Publishing. This book was released on 2020-05-26 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. - Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more - Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures - Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Download or read book Emerging Memories written by Betty Prince and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
Download or read book Electronic Devices Architectures for the NANO CMOS Era written by Simon Deleonibus and published by CRC Press. This book was released on 2019-05-08 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Download or read book Advances in Multifunctional Materials and Systems II written by Jun Akedo and published by John Wiley & Sons. This book was released on 2014-02-19 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contains a collection of papers from the below symposia heldduring the 10th Pacific Rim Conference on Ceramic and GlassTechnology (PacRim10), June 2-7,2013, in Coronado, California2012: • Advances in Electroceramics • Microwave Materials and Their Applications • Oxide Materials for Nonvolatile Memory Technology andApplications
Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2015-08-05 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Download or read book Quantum Dots written by Ameenah Al-Ahmadi and published by BoD – Books on Demand. This book was released on 2012-04-04 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book “Quantum dots: A variety of a new applications” provides some collections of practical applications of quantum dots. This book is divided into four sections. In section 1 a review of the thermo-optical characterization of CdSe/ZnS core-shell nanocrystal solutions was performed. The Thermal Lens (TL) technique was used, and the thermal self-phase Modulation (TSPM) technique was adopted as the simplest alternative method. Section 2 includes five chapters where novel optical and lasing application are discussed. In section 3 four examples of quantum dot system for different applications in electronics are given. Section 4 provides three examples of using quantum dot system for biological applications. This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Biology, Material Science, Medicine with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.
Download or read book Physics of Semiconductors written by José Menéndez and published by AIP Conference Proceedings / M. This book was released on 2005 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation All papers have been peer-reviewed. This is the most important conference in the field of semiconductor physics. It has been held biennially since 1951. The proceedings cover a wide range of topics, from fundamental structural, vibrational, and electronic properties to device applications. Special emphasis is given to areas of current interest such as nitride semiconductors, nanostructures, spintronics, and quantum computing. This volume is a fundamental reference for physicists, chemists, materials scientists, and electrical engineers.
Download or read book Flash Memories written by Igor Stievano and published by BoD – Books on Demand. This book was released on 2011-09-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flash memories and memory systems are key resources for the development of electronic products implementing converging technologies or exploiting solid-state memory disks. This book illustrates state-of-the-art technologies and research studies on Flash memories. Topics in modeling, design, programming, and materials for memories are covered along with real application examples.
Download or read book Gate Stack Engineering for Emerging Polarization based Non volatile Memories written by Milan Pesic and published by BoD – Books on Demand. This book was released on 2017-07-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Download or read book Nanoelectronics with a background in Nanotechnology written by Dr Dalvinder Singh Grewal and published by Archers & Elevators Publishing House. This book was released on with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems II written by D. Misra and published by The Electrochemical Society. This book was released on 2006 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
