Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics of High Speed Transistors written by Juras Pozela and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Download or read book Ultra short Gate Lattice mismatched Modulation doped Field effect Transistors written by Guan-Wu Wang and published by . This book was released on 1988 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modulation doped Field effect Transistors for Low Distortion Microwave Mixing Applications written by Eric W. Lin and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Frontiers In Electronics Future Chips Proceedings Of The 2002 Workshop On Frontiers In Electronics Wofe 02 written by Yoon Soo Park and published by World Scientific. This book was released on 2003-01-29 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Download or read book Frontiers of Thin Film Technology written by and published by Academic Press. This book was released on 2000-11-07 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.

Download or read book Modulation doped Field Effect Transistors for High power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

Download or read book Introduction to Semiconductor Devices written by Kevin F. Brennan and published by Cambridge University Press. This book was released on 2005-02-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

Download or read book High Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D. and published by Academic Press. This book was released on 2001 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.

Download or read book Design and Performance of Modulation doped Field Effect Transistors written by Steven Lawrence Yellen and published by . This book was released on 1986 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Technologies written by Jan Grym and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.

Download or read book Silicon Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers