Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1977 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Frontiers In Electronics Future Chips Proceedings Of The 2002 Workshop On Frontiers In Electronics Wofe 02 written by Yoon Soo Park and published by World Scientific. This book was released on 2003-01-29 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2002 Workshop on Frontiers in Electronics was the third in the series of WOFE workshops. Over 70 leading experts from academia, industry, and government agencies reported on the most recent developments in their fields and exchanged views on future trends and directions of the electronics and photonics industry. The issues they addressed ranged from system-on-chip to DNA doping, from ultrathin SOI to electrotextiles, from photonics integration on the ULSI platform to wide band gap semiconductor devices and solid state lighting. The rapid pace of electronic technology evolution compels a merger of different technical areas, and WOFE-02 provided a unique opportunity for cross-fertilization of the emerging fields of microelectronics, photonics, and nanoelectronics. The workshop was informal and stimulated provocative views, visionary outlooks, and discussions on controversial issues.

Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Download or read book Instructor s Solution Manaul for Operation and Modeling of the Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and published by . This book was released on 2010-12-14 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Trade Offs in Analog Circuit Design written by Chris Toumazou and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 1065 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the frequency of communication systems increases and the dimensions of transistors are reduced, more and more stringent performance requirements are placed on analog circuits. This is a trend that is bound to continue for the foreseeable future and while it does, understanding performance trade-offs will constitute a vital part of the analog design process. It is the insight and intuition obtained from a fundamental understanding of performance conflicts and trade-offs, that ultimately provides the designer with the basic tools necessary for effective and creative analog design. Trade-offs in Analog Circuit Design, which is devoted to the understanding of trade-offs in analog design, is quite unique in that it draws together fundamental material from, and identifies interrelationships within, a number of key analog circuits. The book covers ten subject areas: Design methodology, Technology, General Performance, Filters, Switched Circuits, Oscillators, Data Converters, Transceivers, Neural Processing, and Analog CAD. Within these subject areas it deals with a wide diversity of trade-offs ranging from frequency-dynamic range and power, gain-bandwidth, speed-dynamic range and phase noise, to tradeoffs in design for manufacture and IC layout. The book has by far transcended its original scope and has become both a designer's companion as well as a graduate textbook. An important feature of this book is that it promotes an intuitive approach to understanding analog circuits by explaining fundamental relationships and, in many cases, providing practical illustrative examples to demonstrate the inherent basic interrelationships and trade-offs. Trade-offs in Analog Circuit Design draws together 34 contributions from some of the world's most eminent analog circuits-and-systems designers to provide, for the first time, a comprehensive text devoted to a very important and timely approach to analog circuit design.

Download or read book The Physical Properties of Thin Metal Films written by G.P. Zhigal'skii and published by CRC Press. This book was released on 2003-07-10 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of conducting materials, such as metals, alloys and semiconductors are currently in use in many areas of science and technology, particularly in modern integrated circuit microelectronics that require high quality thin films for the manufacture of connection layers, resistors and ohmic contacts. These conducting films are also important for fundamental investigations in physics, radio-physics and physical chemistry. Physical Properties of Thin Metal Films provides a clear presentation of the complex physical properties particular to thin conducting films and includes the necessary theory, confirming experiments and applications. The volume will be an invaluable reference for graduates, engineers and scientists working in the electronics industry and fields of pure and applied science.

Download or read book Specular Gloss written by Raimo Silvennoinen and published by Elsevier. This book was released on 2010-07-07 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aesthetic appearance of various objects is important to human beings. One measure of the quality of an object is its surface quality, which can be characterized with the concept of gloss. Nowadays measurement of the gloss is a routine off-line method in assessment of quality of product at various sectors of industry.The book gives a fresh treatment on the concept of gloss. Theoretical description will be on more general basis of optical physics than in other sources. The text will give a modern treatise of machine vision based glossmeters and furnish the ideas how to measure and analyse gloss from complex-structured objects. Innovations of machine vision and gloss data analysis by embedded micro-controllers and microprocessors are trademarks that fill the gaps of older textbooks.Key Features:- modern treatment of gloss - presents novel glossmeter based high technology- completes principle of machine vision- application in industrial environment- emphasis on pedagogical presentation- modern treatment of gloss - describes novel glossmeter-based high technology- presents principles of machine vision- gives applications in industrial environment- emphasis on pedagogical presentation

Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Download or read book Advances in Nanotechnology Research and Application 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 8760 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nanotechnology Research and Application: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Nanotechnology. The editors have built Advances in Nanotechnology Research and Application: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Nanotechnology in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Advances in Nanotechnology Research and Application: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1969 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Design of Modern Microwave Oscillators for Wireless Applications written by Ulrich L. Rohde and published by John Wiley & Sons. This book was released on 2005-05-27 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: Delivering the best possible solution for phase noise and outputpower efficiency in oscillators This complete and thorough analysis of microwave oscillatorsinvestigates all aspects of design, with particular emphasis onoperating conditions, choice of resonators and transistors, phasenoise, and output power. It covers both bipolar transistors andFETs. Following the authors' guidance, readers learn how to designmicrowave oscillators and VCOs that can be tuned over a very widefrequency range, yet have good phase noise, are low cost, and aresmall in size. All the essential topics in oscillator design anddevelopment are covered, including: * Device and resonator technology * Study of noise sources * Analysis methods * Design, calculation, and optimization methodologies * Practical design of single and coupled oscillators While most of the current literature in the field concentrates onclassic design strategies based on measurements, simulation, andoptimization of output power and phase noise, this text offers aunique approach that focuses on the complete understanding of thedesign process. The material demonstrates important design rulesstarting with the selection of best oscillator topology, choice oftransistors, and complete phase noise analysis that leads tooptimum performance of all relevant oscillator features. Alsoincluded are CMOS oscillators, which recently have become importantin cellular applications. For readers interested in specializedapplications and topics, a full chapter provides all the necessaryreferences. The contents of the text fall into two major categories: * Chapters 1 through 9 deal with a very detailed and expandedsingle resonator oscillator, including a thorough treatment of bothnonlinear analysis and phase noise * Chapters 10 and 11 use the knowledge obtained and apply it tomultiple coupled oscillators (synchronized oscillators) This text is partially based on research sponsored by the DefenseAdvanced Research Projects Agency (DARPA) and the United StatesArmy and conducted by Synergy Microwave Corporation. With thewealth of information provided for the analysis and practicaldesign of single and synchronized low-noise microwave oscillators,it is recommended reading for all RF microwave engineers. Inaddition, the text's comprehensive, step-by-step approach makes itan excellent graduate-level textbook.

Download or read book MOSFET Modeling BSIM3 User s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Download or read book Cmos Rf Modeling Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Download or read book Semiconductor Devices written by Amal Banerjee and published by Springer Nature. This book was released on 2023-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.