Download or read book Noise in Bipolar Junction Transistors at Cryogenic Temperatures written by Thomas Wade and published by . This book was released on 2019-12-08 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Fluctuation phenomenon (both thermal and shot noise) were measured in the junctions of bipolar junction transistors (BJT's) at liquid nitrogen temperatures and beyond. Dissertation Discovery Company and the University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Noise in Bipolar Junction Transistors at Cryogenic Temperatures." by Thomas Edward Wade, was obtained from the University of Florida and is being sold with permission from the author. A free digital copy of this work may also be found in the university's institutional repository, the IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Download or read book Noise in Bipolar Junction Transistors at Cryogenic Temperatures written by Thomas Edward Wade and published by . This book was released on 1974 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Quantum 1 f Noise in Bipolar Junction Transistors written by Alister Chun-Fung Young and published by . This book was released on 1990 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1975 with total page 970 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Low Frequency Noise Sources in Bipolar Junction Transistors written by Richard Charles Jaeger and published by Palala Press. This book was released on 2018-03-02 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Download or read book Low Frequency Noise Sources in Bipolar Junction Transistors written by Richard Charles Jaeger and published by Palala Press. This book was released on 2015-09-08 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.
Download or read book Experimental Verification of a New Model for Bipolar Transistor Flicker Noise written by Ling Li and published by . This book was released on 2000 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the fluctuation in base surface recombination and the fluctuation in the mobility or diffusivity of free charge carriers. Our experiments were done to verify a newly established low frequency noise model in BJTs that depends not only on emitter current, but also on emitter-collector voltage. Two experimental systems were used for noise measurement. The automated system is effective for the measurement of flicker noise of BJT operating in the low frequency range (around 1Hz), while the analog system is efficient for the noise measurement of BJT operating in the high frequency range (around 1 KHz). Normal commercially available BJTs (PNP2907A and NPN2222A), special low noise and low power BJTs (PNP4125, NPN4124), and PMOSFETs were used in our measurements. The results of our experimental measurements indicate that BJT low frequency flicker noise is not only dependent on its emitter-collector current as described in the SPICE models, but is also strongly dependent on emitter-collector voltage which is not included in the SPICE models. Substantial power dissipation occurs in BJT's. A new model is thus proposed to demonstrate that the noise current is not just simply a function of collector current but rather power dissipation (I*V). Temperature fluctuations caused by significant heat generation and heat conduction due to high power dissipation have been suggested to result in the flicker noise in transistors. A detailed comparison of experimental data with the calculated data from the model has been made to verify the newly proposed model. It is demonstrated that the new noise model fits our experiment measurements very well in the high frequency range. However, there is some discrepancy between the experimental data and the calculated data in the low frequency region. Future work needs to be continued to refine the BJT flicker noise model by both theory and experiments.
Download or read book Advances in Cryogenic Engineering written by K.D. Timmerhaus and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1985 joint Cryogenic Engineering/International Cryogenic Materi als Conference was held on the campus of the Massachusetts Institute of Technology, Cambridge, Massachusetts. About 350 papers were presented at the joint conference on a wide variety of topics in cryogenic science and engineering. This volume of Advances in cryogenic Eogineerlng, the thirty-first in the series which began in 1954, contains most of the papers which were presented at the 1985 Cryogenic Engineering Conference. Each paper was rigorously peer reviewed to maintain the international reputation of Advances as the premier archival publication in the field of cryoscience, engineering, and technology. All the papers published in Volume 31 contain an abstract. A copy of the book will be sent to all maj or abstracting services, which should improve retrieval of the information contained in the published papers. I would like to thank the authors and those who served as reviewers. I especially appreciate the assistance of my colleague M. E. Stone who edited some of the papers for this volume. Terry Gutierrez was invaluable in preparing the manuscripts for publication, and I thank her. xvii DEDICATION Dr. Samuel C. Collins, Professor Emeritus of the Massachusetts Institute of Technology, internationally known as the father of practical helium liquefiers and founder of the MIT Cryogenic Engineering Laboratory, died on June 19, 1984, in George Washington University Hospital, Washington, DC.
Download or read book The Effect of Temperature on Bipolar Junction Transistor Noise written by Narendra Keshavlal Shah and published by . This book was released on 1972 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Alloy junction Transistors at Liquid Nitrogen Temperature written by William Conrad Bruncke and published by . This book was released on 1961 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Noise Study of Bipolar Junction Transistor Reliability written by Chih-Chieh Jack Sun and published by . This book was released on 1993 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D. and published by Academic Press. This book was released on 2001 with total page 985 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Download or read book Low Frequency Noise in Semiconductor Devices written by Xiaonan Zhang and published by . This book was released on 1985 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamic Range Limitations of Low noise Microwave Transistors at Cryogenic Temperatures written by Ahmet Hakan Coskun and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Dynamic range is an important metric that specifies the limits of input signal amplitude for the ideal operation of a given receiver. The low end of dynamic range is defined by the noise floor whereas the upper limit is determined by large-signal distortion. While dynamic range can be predicted in the temperature range where compact transistor models are valid, the lack of large-signal models at temperatures below -55 C prevents the prediction and optimization of dynamic range for applications that require cryogenic cooling. For decades, the main goal concerning the performance of these applications was lowering the noise floor of cryogenic receiver front-ends. For this, linear small-signal noise models have been extensively studied and used for designs of low-noise amplifiers. In this work, the existing small-signal noise modeling approach is extended to capture the weakly nonlinear properties of the transistors that are commonly used in cryogenic amplification. Indium phosphide high electron mobility transistors and silicon germanium heterojunction bipolar transistors are considered. The goal of this work is to identify the fundamental dynamic range limitations of these transistors such that the results are not device specific, but applicable to the corresponding device families. Identifying the fundamental limitations of dynamic range in a semiconductor device requires a broad understanding of physical properties of the transistors. For this, a theoretical analysis will be presented first as a function of temperature. The small-signal noise modeling will then be discussed using techniques that are well recognized in the literature. This will be followed by an explanation of the nonlinear modeling approach used in this work. This approach relies on the definition of Taylor series expansion coefficients of the dominant nonlinear mechanisms of the transistors. The modeling results will be interpreted with respect to the initially presented theoretical framework. Finally, the dynamic range performance will be studied as a function of source and load terminations. In addition to this systematic approach to understanding the physical limitations of dynamic range, model to measurement agreement of broadband cryogenic amplifiers will also be presented which will verify the accuracy of the modeling approach.
Download or read book Low Frequency Noise Modelling of Bipolar Junction Transistors for VLSI Circuits microform written by Anthony Ng and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1992 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
