Download or read book Noise Characterization of Gallium Arsenide Field Effect Transistors written by Brahim Mezghani and published by . This book was released on 1990 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of Low noise Liquid Nitrogen Cooled Gallium Arsenide Field Effect Transistors written by Craig Scott and published by . This book was released on 1981 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large Signal Characterization and Modelling of Gallium Arsenide Power Field Effect Transistors written by Michael Oleshko and published by . This book was released on 1988 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Noise and Interfering Signals written by Gabriel Vasilescu and published by Springer Science & Business Media. This book was released on 2006-01-17 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic Noise and Interfering Signals is a comprehensive reference book on noise and interference in electronic circuits, with particular focus on low-noise design. The first part of the book deals with mechanisms, modelling, and computation of intrinsic noise which is generated in every electronic device. The second part analyzes the coupling mechanisms which can lead to a contamination of circuits by parasitic signals and provides appropriate solutions to this problem. The last part contains more than 100 practical, elaborate case studies. The book requires no advanced mathematical training as it introduces the fundamental methods. Moreover, it provides insight into computational noise analysis with SPICE and NOF, a software developed by the author. The book addresses designers of electronic circuits as well as researchers from electrical engineering, physics, and material science. It should also be of interest for undergraduate and graduate students.
Download or read book Characterization and Modeling of the Dual gate Gallium Arsenide Field effect Transistor written by Gregory S. F. Mau and published by . This book was released on 1981 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1979 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of 0 1 mu m GaAs MESFET s written by Karen Elizabeth Moore and published by . This book was released on 1994 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Cryogenic Low frequency Signal and Noise Measurements of Gallium Arsenide Microwave Field effect Transistors written by Howard Allen Larson and published by . This book was released on 1978 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 36 (thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 36 reports theses submitted in 1991, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Download or read book Cryogenic Measurements of Aerojet Gaas N JFETs written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-08 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: The spectral noise characteristics of Aerojet gallium arsenide (GaAs) junction field effect transistors (JFET's) have been investigated down to liquid-helium temperatures. Noise characterization was performed with the field effect transistor (FET) in the floating-gate mode, in the grounded-gate mode to determine the lowest noise readings possible, and with an extrinsic silicon photodetector at various detector bias voltages to determine optimum operating conditions. The measurements indicate that the Aerojet GaAs JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to silicon (Si) metal oxide semiconductor field effect transistor (MOSFET's) operating at liquid helium temperatures, and is equal to the best Si n channel junction field effect transistor (n-JFET's) operating at 300 K. Goebel, John H. and Weber, Theodore T. Ames Research Center...
Download or read book Analysis of Gallium Arsenide Field Effect Transistors written by Michael Arthur Naukam and published by . This book was released on 1998 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book DC and RF Characterization of Gallium Indium Arsenide aluminum Indium Arsenide indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications written by Lauren Fay Palmateer and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Download or read book Investigation of Highly Doped Schottky Barrier Field Effect Transistors Gallium Arsenide written by Theodor O. Mohr and published by . This book was released on 1971 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs Schottky-barrier field-effect transistors have shown excellent properties as high-frequency devices and in respect to noise behavior. Improvements in technology and the physical layout have resulted in device qualities far beyond the limits of available measuring equipment. More precise techniques are therefore required for characterization. One viable approach with the existing equipment is error correction in scattering parameter measurements. This subject is discussed in the first section of the report. The second section deals with noise measurements on newly designed transistors with one gate land only. The measured results are discussed in detail and a model is given which includes noise contributions due to intervalley scattering and carrier drift velocity saturation. (Author).
Download or read book Characterization of Low frequency Noise in Metal Oxide Semiconductor Field Effect Transistors written by Akm Ariful Ahsan and published by . This book was released on 2003 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Field Effect Transistors with Semi Insulated Gates written by D. W. Shaw and published by . This book was released on 1977 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the results of a program for development and evaluation of gallium arsenide field effect transistors with semi-insulated gates (SIGFETs). These devices are potentially applicable to a number of microwave systems, including active-element phased-array radars and ECM jammers. Included in the scope of the program was an analysis of Class A and Class B FET amplifiers; design, fabrication, and dc and rf characterization of SIGFETs; evaluation of procedures for formation of n(+) contact regions for FETs; and an objective comparison of the properties of SIGFETs with those of conventional GaAs FETs. Theoretical analyses of the dc and rf operating characteristics of Class A and Class B FET amplifiers showed that maximum efficiency is expected for Class B operation into a tuned load. This conclusion was supported by the experimental observation that maximum efficiency was obtained for GaAs FETs when the gate bias approaches the pinch-off voltage, i.e., approaching Class B operation. Procedures were developed for fabrication of SIGFETs using either epitaxial growth or ion bombardment to form the region of high resistivity or semi-insulating GaAs to be located beneath the gate contact metal. SIGFETs fabricated by this procedure were compared with conventional FETs (without semi-insulated gates) fabricated from the same starting material. The SIGFETs have higher gate reverse breakdown voltages, lower transconductances, and approx. 1 dB lower small signal gains.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt:
