Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and published by World Scientific. This book was released on 1996-02-09 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation written by Ilya Obodovskiy and published by Elsevier. This book was released on 2019-03-09 with total page 722 pages. Available in PDF, EPUB and Kindle. Book excerpt: The author is ready to assert that practically none of the readers of this book will ever happen to deal with large doses of radiation. But the author, without a shadow of a doubt, claims that any readers of this book, regardless of gender, age, financial situation, type of professional activity, and habits, are actually exposed to low doses of radiation throughout their life. This book is devoted to the effect of small doses on the body. To understand the basic effects of radiation on humans, the book contains the necessary information from an atomic, molecular and nuclear physics, as well as from biochemistry and biology. Special attention is paid to the issues that are either not considered or discussed very briefly in existing literature. Examples include the ionization of inner atomic shells that play an essential role in radiological processes, and the questions of transformation of the energy of ionizing radiation in matter. The benefits of ionizing radiation to mankind is reflected in a wide range of radiation technologies used in science, industry, agriculture, culture, art, forensics, and, what is the most important application, medicine. Radiation: Fundamentals, Applications, Risks and Safety provides information on the use of radiation in modern life, its usefulness and indispensability. Experiments on the effects of small doses on bacteria, fungi, algae, insects, plants and animals are described. Human medical experiments are inhuman and ethically flawed. However, during the familiarity of mankind with ionizing radiation, a large number of population groups were subject to accumulation, exposed to radiation at doses of small but exceeding the natural background radiation. This book analyzes existing, real-life radiation results from survivors of Hiroshima and Nagasaki, Chernobyl and Fukushima, and examines studies of radiation effect on patients, radiologists, crews of long-distant flights and astronauts, on miners of uranium copies, on workers of nuclear industry and on militaries, exposed to ionizing radiation on a professional basis, and on the population of the various countries receiving environmental exposure. The author hopes that this book can mitigate the impact of radiation phobia, which prevails in the public consciousness over the last half century. - Explores the science of radiation and the effects of radiation technologies and biological processes - Analyzes the elementary processes of ionization and excitation - Summarizes information about inner shells ionization and its impact on matter and biological structures - Discusses quantum concepts in biology and clarifies the importance of epigenetics in radiological processes - Includes case studies focusing on humans irradiated by low doses of radiation and its effects
Download or read book Semiconductors for Room Temperature Nuclear Detector Applications written by and published by Academic Press. This book was released on 1995-09-11 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineersin modern industry. - One of the first comprehensive works on room-temperature nuclear detectors - Edited by technical experts in the field - Written by recognized authorities from industrial and academic institutions - Focused on the electrical, optical, and structural properties of semiconductors used for room-temperature nuclear detectors
Download or read book Shallow level Centers In Semiconductors Proceedings Of The 7th International Conference written by C A J Ammerlaan and published by World Scientific. This book was released on 1997-04-19 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Download or read book Heterostructure Epitaxy and Devices HEAD 97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.
Download or read book Semiconductors written by and published by . This book was released on 1997-07 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt: English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1988-12-24 with total page 405 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Download or read book Proceedings of the 18th International Conference on Defects in Semiconductors written by Masashi Suezawa and published by . This book was released on 1995 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solid State Crystals Growth and Characterization written by Józef Żmija and published by SPIE-International Society for Optical Engineering. This book was released on 1997 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
