Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Methods in Semiconductor Physics written by G. Langouche and published by Elsevier. This book was released on 1992-04-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Download or read book NBS Special Publication written by and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Isotopes and Radiation Technology written by and published by . This book was released on 1964 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applications of the Isotopic Effect in Solids written by Vladimir G. Plekhanov and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Readers intent on mastering the basics should start by reading the first few overview chapters and then delve into the descriptions of specific current applications to see how they actually work. Important future applications are also outlined, including information storage, materials for computer memories, quantum computers, isotopic fibers, isotopic optoelectronics, and quantum electronics.
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dopants and Defects in Semiconductors Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Download or read book Silicon Devices written by Kenneth A. Jackson and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. This concise handbook deals with one of the most important topics for the electronics industry. World renowned authors have contributed to this unique overview of the processing of silicon and silicon devices.
Download or read book Isotopes in Condensed Matter written by Vladimir G. Plekhanov and published by Springer Science & Business Media. This book was released on 2012-08-10 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a concise introduction to the newly created sub-discipline of solid state physics isotopetronics. The role of isotopes in materials and their properties are describe in this book. The problem of the enigma of the atomic mass in microphysics is briefly discussed. The range of the applications of isotopes is wide: from biochemical process in living organisms to modern technical applications in quantum information. Isotopetronics promises to improve nanoelectronic and optoelectronic devices. With numerous illustrations this book is useful to researchers, engineers and graduate students.
Download or read book Applications Of Nuclear Techniques written by George Vourvopoulos and published by World Scientific. This book was released on 1990-12-31 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted to applications of nuclear techniques in life sciences, materials science and industry. New techniques are explored and established ones are analyzed in depth. Technology transfer from universities and national laboratories to industry and the health profession is discussed. For developing laboratories, a review of the blend of equipment and facilities necessary for materials characterization and analysis is presented. The capabilities of nuclear methods for on-line analysis in industrial environments are identified.
