Download or read book Neutron Radiation Damage Studies on Silicon Detectors written by and published by . This book was released on 1990 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Studies of Radiation Damage of Silicon Detectors Internal Report written by and published by . This book was released on 1994 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences.
Download or read book Fast Neutron Radiation Damage Effects on High Resistivity Silicon Junction Detectors Revision written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: P-n−-n+ silicon radiation detectors made of high resistivity Si material ([rho] e"2 k[Omega]-cm) were irradiated to a neutron fluence of a few times of 1013 n/cm2. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of [alpha] = 9 × 10−17 A/cm ([Delta]I = [alpha]V[Delta][phi]{sub n}), and the C-V characteristics of detectors irradiated to [phi]{sub n}> 1012 n/cm2 become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation.
Download or read book Fast Neutron Radiation Damage Effects on High Resistivity Silicon Junction Detectors written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: P-n−-n+ silicon radiation detectors made of high resistivity Si material (? ≥ 2 k?-cm) were irradiated to a neutron fluence of a few times of 1013 n/cm2. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of? = 9 × 10−17 A/cm (?I =?V??{sub n}), and the C-V characteristics of detectors irradiated to?{sub n}> 1012 n/cm2 become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation.
Download or read book Study of Bulk Damage in High Resistivity Silicon Detectors Irradiated by High Dose of 6 Co gamma radiation written by and published by . This book was released on 1996 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: High dose (> 200 Mrad) [gamma]-radiation induced displacement damage (or bulk damage) in high resistivity (6--10 k[Omega]-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with [gamma] dose at a rate of 3.3 × 10−7 A/cm3/Mrad. This introduction rate of bulk leakage current makes the introduction of generation centers by 210 Mrad of [gamma]-radiation comparable to that by 1 × 1012 n/cm2 of neutron radiation. Significant carrier removal (or donor removal), about 100%, was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) (or type inversion) was observed in detectors irradiated to ≥ 215 Mrad using transient current technique (TCT). As many as seven deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was little or no annealing (or reverse annealing) for detectors irradiated to 215 Mrad. Some annealing for detectors irradiated to 500 Mrad have been observed.
Download or read book Radiation Damage Studies of Silicon Detectors written by Sakuntala Sotthibandhu and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Particle Physics Reference Library written by Christian W. Fabjan and published by Springer Nature. This book was released on 2020 with total page 1083 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second open access volume of the handbook series deals with detectors, large experimental facilities and data handling, both for accelerator and non-accelerator based experiments. It also covers applications in medicine and life sciences. A joint CERN-Springer initiative, the "Particle Physics Reference Library" provides revised and updated contributions based on previously published material in the well-known Landolt-Boernstein series on particle physics, accelerators and detectors (volumes 21A, B1,B2,C), which took stock of the field approximately one decade ago. Central to this new initiative is publication under full open access
Download or read book Studies of the Dependence on Oxidation Thermal Processes of Effects on the Electrical Properties of Silicon Detectors by Fast Neutron Radiation written by and published by . This book was released on 1991 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage (C-V) of MOS capacitors and current-voltage (I-V) of back to back diodes (p-n−- p+ if n− is not inverted to p) or resistors (p+-p-p+ if inverted) have been introduced in this study in monitoring the possible type-inversion (n2!) under high neutron fluence. No type-inversion in the material underneath SiO2 and the p+ contact has been observed so far in this work for detectors made on the five oxides up to the neutron fluence of a few times 1013 n/cm2. However, it has been found that detectors made on higher temperature oxides (Td"1100°C) exhibit less leakage current increase at high neutron fluence ([phi] d"1013 n/cm2).
Download or read book Study of Bulk Damage in High Resistivity Silicon Detectors Irradiated by High Dose Of sup 60 Co gamma radiation written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High dose (> 200 Mrad)[gamma]-radiation induced displacement damage (or bulk damage) in high resistivity (6--10 k[Omega]-cm) silicon detectors has been studied. It has been found that detector bulk leakage current increases with[gamma] dose at a rate of 3.3[times] 10[sup[minus]7] A/cm[sup 3]/Mrad. This introduction rate of bulk leakage current makes the introduction of generation centers by 210 Mrad of[gamma]-radiation comparable to that by 1[times] 10[sup 12] n/cm[sup 2] of neutron radiation. Significant carrier removal (or donor removal), about 100%, was found in detectors irradiated to 215 Mrad. Space charge sign inversion (SCSI) (or type inversion) was observed in detectors irradiated to[ge] 215 Mrad using transient current technique (TCT). As many as seven deep levels have been observed by current deep level transient spectroscopy (I-DLTS). There was little or no annealing (or reverse annealing) for detectors irradiated to 215 Mrad. Some annealing for detectors irradiated to 500 Mrad have been observed.
Download or read book Neutron Damage in SiC Semiconductor Radiation Detectors in the GT MHR written by D. W. Miller and published by . This book was released on 2006 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a part of a U.S. Department of Energy Nuclear Engineering Research Initiative (NERI) project, we are evaluating the potential for using silicon carbide (SiC) semiconductor radiation detectors, operating in the pulse mode, as power monitors for gas turbine modular helium reactor (GT-MHR) [1]. Locations for the power monitors will be selected considering acceptable detector count rates and lifetimes. We have characterized the radiation environment at various locations in the GT-MHR, where detectors may be placed, in terms of the 1 MeV equivalent neutron flux in SiC (?eq, 1 MeV SiCTotal). Also, we have characterized the radiation field in beam part 1 (BP1) of the Ohio State University Research Reactor (OSURR) in these same terms, with the intent of correlating observed degradation of the SiC detectors in the OSURR to the degradation that can be expected for various detector locations in the GT-MHR. Comparing ?eq, 1 MeV, SiCTotal for the GT-MHR and for the OSURR, we conclude that SiC devices cannot be adequately tested in the characterization vessel in OSURR BP1 for the radiation damage that would be incurred over a refueling cycle for detectors placed in-core. Also, we note that the radiation environment in the OSURR BP1 is harder than the radiation environment in the GT-MHR.
Download or read book Evolution of Silicon Sensor Technology in Particle Physics written by Frank Hartmann and published by Springer Science & Business Media. This book was released on 2008-12-01 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the post era of the Z and W discovery, after the observation of Jets at UA1 and UA2 at CERN, John Ellis visioned at a HEP conference at Lake Tahoe, California in 1983 “To proceed with high energy particle physics, one has to tag the avour of the quarks!” This statement re ects the need for a highly precise tracking device, being able to resolve secondary and tertiary vertices within high-particle densities. Since the d- tance between the primary interaction point and the secondary vertex is proportional tothelifetimeoftheparticipatingparticle,itisanexcellentquantitytoidentifypar- cle avour in a very fast and precise way. In colliding beam experiments this method was applied especially to tag the presence of b quarks within particle jets. It was rst introduced in the DELPHI experiment at LEP but soon followed by all collider - periments to date. The long expected t quark discovery was possible mainly with the help of the CDF silicon vertex tracker, providing the b quark information. In the beginning of the 21st century the new LHC experiments are beginning to take 2 shape. CMS with its 206m of silicon area is perfectly suited to cope with the high luminosity environment. Even larger detectors are envisioned for the far future, like the SiLC project for the International Linear Collider. Silicon sensors matured from small 1in. single-sided devices to large 6in. double-sided, double metal detectors and to 6in. single-sided radiation hard sensors.
Download or read book Fluka written by Alfredo Ferrari and published by . This book was released on 2005 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Neutron Radiation on the Electrical Performance Parameters of Silicon and Silicon Carbide Schottky Power Diodes written by Jonathan Andrew Kulisek and published by . This book was released on 2006 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The objective of this work is to support NASA's space mission efforts by analyzing and predicting the effects of neutron radiation damage on power semiconductor devices made of Si and SiC, which can be used in power circuits aboard NASA's spacecraft. This research focuses primarily on diodes for their widespread use in power electronic circuits and as neutron detectors for nuclear reactor-powered spacecraft. Schottky diodes were investigated, in particular, due to their known, inherent resistance to radiation damage and thus possible use in environments with high levels of radiation. Several computer codes were used in conjunction with measured, experimental data obtained with the use of the Ohio State University Research Reactor (OSURR) to study the effects of neutron radiation on the electrical performance parameters of Schottky diodes. The Si and SiC power Schottky diodes that were irradiated in the OSURR were exposed to high levels of neutron radiation, yet the electrical performance parameters associated with their metal-semiconductor junctions remained unaffected, and they exhibited relatively systematic, yet modest degradation with respect to electrical performance parameters associated with semiconductor bulk damage, such as series resistance, R. As for the reverse I-V characteristics, the SiC Schottky diodes exhibited a decrease in leakage current and an increase in breakdown voltage with increasing neutron fluence. For the Si Schottky diodes, the leakage current increased and the breakdown voltage decreased with increasing neutron fluence, but only to a relatively slight degree. From these results, it appears that the Si and SiC power Schottky diodes investigated in this study can tolerate high levels of radiation damage without suffering a severe degradation in electrical performance, and thus show promise for use in space radiation environments.
Download or read book Fast Neutron Damage in Silicon Detectors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation effects of fast neutrons have been measured in silicon detectors of varying resistivity irradiated to approx. 1011 n/cm2 over periods of weeks. The principal damage effect is increased leakage current due to generation of carriers from defect levels in the depletion region. Damage and leakage current constants have been established for detector resistivities between 10 and 27,000 ohm-cm and lie in the range of 0.7 /minus/ 2 /times/ 10E7 sec/cm2 (K) for PuBe neutrons. A slight increase in K was observed for higher resistivities which translates into somewhat improved radiation hardness. A fit of this data was attempted to a two-level recombination formulation of the damage constant. 13 refs., 6 figs., 1 tab.
Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Download or read book Fast Neutron Radiation Damage Effects on High Resistivity Silicon Junction Detectors written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
