Download or read book Neutron Damage in SiC Semiconductor Radiation Detectors in the GT MHR written by D. W. Miller and published by . This book was released on 2006 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a part of a U.S. Department of Energy Nuclear Engineering Research Initiative (NERI) project, we are evaluating the potential for using silicon carbide (SiC) semiconductor radiation detectors, operating in the pulse mode, as power monitors for gas turbine modular helium reactor (GT-MHR) [1]. Locations for the power monitors will be selected considering acceptable detector count rates and lifetimes. We have characterized the radiation environment at various locations in the GT-MHR, where detectors may be placed, in terms of the 1 MeV equivalent neutron flux in SiC (?eq, 1 MeV SiCTotal). Also, we have characterized the radiation field in beam part 1 (BP1) of the Ohio State University Research Reactor (OSURR) in these same terms, with the intent of correlating observed degradation of the SiC detectors in the OSURR to the degradation that can be expected for various detector locations in the GT-MHR. Comparing ?eq, 1 MeV, SiCTotal for the GT-MHR and for the OSURR, we conclude that SiC devices cannot be adequately tested in the characterization vessel in OSURR BP1 for the radiation damage that would be incurred over a refueling cycle for detectors placed in-core. Also, we note that the radiation environment in the OSURR BP1 is harder than the radiation environment in the GT-MHR.
Download or read book Modeling of Displacement Damage in Silicon Carbide Detectors Resulting from Neutron Irradiation written by Behrooz Khorsandi and published by . This book was released on 2007 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2002-08-21 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Radiation Damage in Semiconductor Detectors written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.
Download or read book Materials in Extreme Environments Volume 929 written by Daryush Ila and published by . This book was released on 2006-09-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book investigates the fundamental properties and response of materials in extreme environments such as static and dynamic high pressure, high strain and high strain-rates, high radiation and electromagnetic fields, high and low temperatures, corrosive conditions, environments causing embrittlement, and environments containing atomic oxygen. This is an extremely active and vibrant field of research, in particular because it is now possible to create laboratory conditions similar in pressure, temperature and radiation to those found in planetary interiors and in space. In addition, advanced simulation methods, coupled with high-performance computing platforms, now afford predictions - on a first-principles basis - of the properties of materials in extreme environments. Scientists from a broad spectrum of fields are represented, including space science, planetary science, high-pressure research, shock physics, ultrafast science, and energetic materials research.
Download or read book Radiation Effects on Semiconductor Devices written by Los Alamos Scientific Laboratory and published by . This book was released on 1961 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effect of Nuclear Radiation on Semiconductor Devices written by F. J. Reid and published by . This book was released on 1960 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented on investigations of standard silicon and germanium transistors, diodes, rectifiers, and such devices as unipolar transistors, Esaki diodes, and SiC, GaP, and selenium rectifiers. The data are intended to be sufficiently inclusive to make it valuable as a guide on effects which can be anticipated from nuclear radiation on electronic components utilizing semiconductor devices. (Author).
Download or read book Radiation damage in semiconductor radiation detectors written by F. M. Beeftink and published by . This book was released on 1975 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Damage Measurements in Room Temperature Semiconductor Radiation Detectors written by and published by . This book was released on 1998 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 101° p/cm2 and significant bulk leakage after 1012 p/cm2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 × 109 p/cm2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 101° n/cm2, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 × 101° [alpha]/cm2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 × 109 [alpha]/cm2. CT detectors show resolution losses after fluences of 3 × 109 p/cm2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 × 101° n/cm2. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 1012 p/cm2 and with 1.5 GeV protons at fluences up to 1.2 × 108 p/cm2. Neutron exposures at 8 MeV have been reported at fluences up to 1015 n/cm2. No radiation damage was reported under these irradiation conditions.
Download or read book Status of Radiation Damage Measurements in Room Temperature Semiconductor Radiation Detectors written by and published by . This book was released on 1998 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI2) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 101° p/cm2 and significant bulk leakage after 1012 p/cm2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 109 p/cm2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 101° n/cm2, although activation was evident. CT detectors show resolution losses after fluences of 3 x 109 p/cm2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 101° n/cm2. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 1012 p/cm2 and with 1.5 GeV protons at fluences up to 1.2 x 108 p/cm2. Neutron exposures at 8 MeV have been reported at fluences up to 1015 n/cm2. No radiation damage was found under these irradiation conditions.
Download or read book Handbook of Radiation Effects written by Andrew Holmes-Siedle and published by OUP Oxford. This book was released on 2002-01-17 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: New edition of this practical and educational handbook for engineer-designers and other professionals. It describes the electronic technology of the new millennium and the complex physical and engineering problems that occur when such equipment is exposed to radiation. The authors have an accumulated joint combined experience in the field of about 75 years, giving a broader blend of experience than any existing book in the field.
Download or read book Radiation Effects in Silicon Carbide SiC Micro Nanoelectromechanical Systems M NEMS written by Hailong Chen and published by . This book was released on 2020 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation is of great importance in both fundamental science (e.g., understanding black holes, exploring the time evolution and the origin of the universe) and technological applications (e.g., diagnosing and treating diseases in medicine, and producing electricity at nuclear plant). Among all the radiation studies, radiation in semiconductor materials attracts the most attention in the information era with numerous semiconductor devices operating in space and on earth. Although silicon (Si) still dominates the semiconductor industry, a number of wide bandgap (WBG) semiconductors have demonstrated advantages in harsh environment applications. Among them, silicon carbide (SiC), with a family of polytypes and excellent properties such as wide bandgap (2.3-3.2 eV), high displacement energies (20-35 eV), excellent elastic modulus (~200-700 GPa) and outstanding thermal conductivity (~500 W m-1K-1), has shown great potential for high temperature, high power, and radiation resistant applications. A quite large body of work has been performed during recent decades to understand the radiation effects in the SiC electronic devices, such as field effect transistors (FETs), bipolar junction transistors (BJTs), and diodes. Meantime, while micro/nanoelectromechanical systems (M/NEMS) have gained tremendous advancements and made great impact on many important applications including inertial sensing (e.g., gyroscopes, accelerators), radio-frequency (RF) signal processing and communication, radiation study in M/NEMS has been quite limited, especially for those based on beyond-Si materials. This dissertation makes an initial thrust toward investigating radiation effects in SiC M/NEMS. First, we develop an innovative 3D integrated MEMS platform, by exploiting a scheme consisting of an array of vertically stacked SiC thin diaphragms (and Si ones for comparison). This integrated design and configuration not only scientifically enables probing different radiation effects (with clear reference and control samples) in a 3D fashion, but also economically evades very expensive, repetitive tests on individual devices. Further, we demonstrate cantilever-shaped 3C-SiC multimode MEMS resonators for real-time detection of ultraviolet (UV) radiation. In parallel, we have also developed Si counterparts of the SiC devices to help elucidate how SiC behaves differently from Si for radiation sensing and detecting. Finally, we explore the displacement and ionizing irradiation effects in SiC NEMS switching devices to gain comprehensive and in-depth understanding of the science behind the radiation effects in nanoscale structures made of thin SiC on SiO2. The investigation of NEMS switches before, during, and after proton and X-ray irradiation reveals how energetic particles cause threshold voltage modification, due to the dislocation damage in SiC crystal and how ionizing effects may affect the performance of these nanoscale devices.
Download or read book Fundamentals of Magnetic Thermonuclear Reactor Design written by Vasilij A. Glukhikh and published by Woodhead Publishing. This book was released on 2018-05-21 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Magnetic Thermonuclear Reactor Design is a comprehensive resource on fusion technology and energy systems written by renowned scientists and engineers from the Russian nuclear industry. It brings together a wealth of invaluable experience and knowledge on controlled thermonuclear fusion (CTF) facilities with magnetic plasma confinement – from the first semi-commercial tokamak T-3, to the multi-billion international experimental thermonuclear reactor ITER, now in construction in France. As the INTOR and ITER projects have made an immense contribution in the past few decades, this book focuses on its practical engineering aspects and the basics of technical physics and electrical engineering. Users will gain an understanding of the key ratios between plasma and technical parameters, design streamlining algorithms and engineering solutions. - Written by a team of qualified experts who have been involved in the design of thermonuclear reactors for over 50 years - Outlines the most important features of the ITER project in France which is building the largest tokamak, including the design, material selection, safety and economic considerations - Includes data on how to design magnetic fusion reactors using CAD tools, along with relevant regulatory documents
Download or read book Basic Studies in the Field of High temperature Engineering written by Nihon Genshiryoku Kenkyūjo and published by Paris, France : Nuclear Energy Agency, Organisation for Economic Co-operation and Development. This book was released on 2002 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: In response to increasing interest in high-temperature, gas-cooled reactors (HTGRs) in many countries and the need for improved materials for nuclear applications in high-temperature environments, the NEA organised a Second Information Exchange Meeting on Basic Studies in the Field of High-temperature Engineering. These proceedings provide an overview of the activities being carried out in eight countries, the improvement of material properties for HTGR application, in-core monitoring methods and properties of irradiated graphite, and HTGR fuel fabrication and performance.
Download or read book Polymer Characterisation written by B.J. Hunt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymers continue to play an ever increasing role in the modern world. In fact it is quite inconceivable to most people that we could ever have existed of the increased volume and variety of materials without them. As a result currently available, and the diversity of their application, characterisation has become an essential requirement of industrial and academic laboratories in volved with polymeric materials. On the one hand requirements may come from polymer specialists involved in the design and synthesis of new materials who require a detailed understanding of the relationship between the precise molecular architecture and the properties of the polymer in order to improve its capabilities and range of applications. On the other hand, many analysts who are not polymer specialists are faced with the problems of analysing and testing a wide range of polymeric materials for quality control or material specification purposes. We hope this book will be a useful reference for all scientists and techno or industrial laboratories, logists involved with polymers, whether in academic and irrespective of their scientific discipline. We have attempted to include in one volume all of the most important techniques. Obviously it is not possible to do this in any great depth but we have encouraged the use of specific examples to illustrate the range of possibilities. In addition numerous references are given to more detailed texts on specific subjects, to direct the reader where appropriate. The book is divided into II chapters.
Download or read book Application of Compact Heat Exchangers For Combined Cycle Driven Efficiency In Next Generation Nuclear Power Plants written by Bahman Zohuri and published by Springer. This book was released on 2015-11-19 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers the fundamentals of combined-cycle plants to provide background for understanding the progressive design approaches at the heart of the text Discusses the types of compact heat exchanger surfaces, suggesting novel designs that can be considered for optimal cost effectiveness and maximum energy production Undertakes the thermal analysis of these compact heat exchangers throughout the life cycle, from the design perspective through operational and safety assurance stages This book describes the quest to create novel designs for compact heat exchangers in support of emergent combined cycle nuclear plants. The text opens with a concise explanation of the fundamentals of combined cycles, describing their efficiency impacts on electrical power generation systems. It then covers the implementation of these principles in nuclear reactor power systems, focusing on the role of compact heat exchangers in the combined cycle loop and applying them to the challenges facing actual nuclear power systems. The various types of compact heat exchanger surfaces and designs are given thorough consideration before the author turns his attention to discussing current and projected reactor systems, and how the novel design of these compact heat e xchangers can be applied to innovative designs, operation and safety analyses to optimize thermal efficiency. The book is written at an undergraduate level, but will be useful to practicing engineers and scientists as well.
Download or read book Atoms Solids and Plasmas in Super Intense Laser Fields written by Dimitri Batani and published by Springer Science & Business Media. This book was released on 2001-09-30 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 30th Course of the International School of Quantum Electronics on Atoms, Solids and Plasmas in Super-Intense Laser Fields, held 8-14 July, in Erice, Sicily
