Download or read book Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals written by Daniel Montero Álvarez and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Download or read book Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals written by Daniel Montero Álvarez and published by . This book was released on 2021 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Download or read book Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals written by Daniel Montero Álvarez and published by Springer Nature. This book was released on 2021-01-08 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

Download or read book Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals written by Daniel Montero Álvarez and published by . This book was released on 2019 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Along this thesis, titled “Near Infrared detectors based on silicon supersaturated with transition metals”, we describe the research based on Ti supersaturated Si substrates, aiming to extend the photoresponse of bare Si towards photon energies lower than the bandgap at room temperature. The starting material is a crystalline Si substrate, which is Ti ion implanted in concentrations up to five orders of magnitude higher than the solid solubility limit (hence the “supersaturation” term). Later, a Nanosecond Laser Annealing (NLA) treatment is used to recover the crystal quality lost after the implantation process. When the concentration of Ti atoms is high enough, the discrete wave function of each impurity may overlap to form an allowed band of states between the valence and the conduction band, called the impurity band. Thus, carriers from the valence band could promote to the conduction band through the Ti impurity band by absorbing photons with energy lower than the band gap...

Download or read book Near Infrared Schottky Silicon Photodetectors Based on Two Dimensional Materials written by Maurizio Casalino and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.

Download or read book Laser Annealing Processes in Semiconductor Technology written by Fuccio Cristiano and published by Woodhead Publishing. This book was released on 2021-04-21 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors

Download or read book Near infrared Photodetectors Based on Si SiGe Nanostructures written by Anders Elfving and published by . This book was released on 2006 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Near infrared Photodetectors Based on Si SiGe Quantum Nanostructures written by Phansak Iamraksa and published by . This book was released on 2006 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Infrared Detectors Based on Si SiGe Superlattices and Silicide SiGe Schottky Barriers Operating Beyond 12um written by and published by . This book was released on 1994 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Work performed in Phase I of this project clearly established the feasibility of using SiGe detectors in the LWIR region. The most important achievements are: Both, Schottky barrier and multiquantum well structures based on SiGe alloys and capable of detection in the LWIR region have been grown by the RTCVD epitaxial growth method; For the first time, the selective epitaxial growth of LWIR SiGe detectors on silicon substrates with CMOS circuitry has been demonstrated, thus showing that monolithically integrated detector-multiplexer structures are feasible; Schottky barrier detectors with cut-off wavelengths exceeding 10 micrometers have been demonstrated; Extensive spectral response, cut-off wavelength and dark current measurements for Schottky barrier detectors based on Pt silicide/ SiGe alloys with Ge content ranging from 0 to 20% have been carried out and discussed. Infrared detectors, SiGe alloys, Schottky barrier detectors, Multiquantum wells.

Download or read book Fabrication and Characterization of Ultra fast Si based Detectors for Near Infrared Wavelengths written by Dan Mihai Buca and published by . This book was released on 2002 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MSM metal Semiconductor Metal Photo detector Using Black Silicon Germanium SiGe for Extended Wavelength Near Infrared Detection written by Fred Semendy and published by . This book was released on 2012 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Metal semiconductor metal Photodetectors written by Kristin Anne McArdle Scott and published by . This book was released on 1997 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Uncooled Infrared Detectors Based on Nanometer thin Metal Films written by Fabian Purkl and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Infrared detectors allow the remote and contactless measurement of the temperature of an object through radiometry. By using an array of multiple IR sensors assembled into a camera, a thermal image of a scene can be collected without the need for illumination. The applications for early infrared photon detectors were limited, because their requirement for cryogenic cooling resulted in bulky systems. The evolution of micromachining technology enabled the development of uncooled bolometric detectors, which found more widespread use in both military and civilian settings. Typical use cases include vision enhancement, navigation and collision avoidance, process control, search and rescue operations, surveillance, building inspection, process control and medical diagnostics. However, the relatively high costs of infrared cameras have prevented a more widespread use in consumer-oriented applications. Part of the challenge is the complex set of requirements for materials used in resistive bolometers, which measure the incident IR radiation through the absorption-induced temperature change of a free-standing and thermally-isolated thermistor. The desired properties include a high IR absorption, a large magnitude and an excellent linearity of the temperature coefficient of resistance (TCR), a high electrical and thermal resistance as well as a low amount of intrinsic noise sources. Typically, a stack of layers is required to fulfill all the mentioned requirements, which results in a complex fabrication process. In this work, we instead developed a bolometer based on a single functional layer of sub-10 nm thin platinum. Reducing the thickness and number of layers has the immediate advantage of allowing for a better thermal isolation and a smaller thermal capacitance. Both measures help to improve the sensitivity, the temperature resolution and the thermal time constant, which represent the most important figures-of-merit of IR detectors. An additional benefit of this approach is a simple and cost-effective fabrication process, the complexity of which commonly scales with the number of mask layers and required lithography steps. Platinum has attractive properties and a long history of use as a thermistor material for temperature sensors. However, to achieve an effective absorption of IR radiation, a thickness in the nanometer-range is required to match the metal film's impedance to that of free space. A surface micromachining process was developed at the Stanford Nanofabrication Facility that enables the reliable fabrication of the resulting delicate detector structures with aspect ratios in excess of 8000:1. The process is compatible with post-CMOS integration and wafer level packaging. Plasma enhanced atomic layer deposition (PE-ALD) was selected for a repeatable and homogeneous deposition of the functional layers. A careful investigation of the thickness dependence of the relevant material properties was performed in order to establish the required knowledge for the design and modeling of the detectors structures. A steep increase in both the electrical and thermal resistivity was measured for a reduction of the Pt film thickness below 10 nm. The TCR of thin-film Pt was found to decrease simultaneously. The characterization of the optical properties of Pt showed an increase in both the real and imaginary part of the complex refractive index for smaller layer thicknesses. The risk of damage from high current densities in the Pt thin film due to electromigration was also evaluated and found to be unproblematic. Through the characterization of the mechanical properties of nanometer-thin PE-ALD layers, a reduction of the Young's modulus of Al2O3 of up to 50% compared to bulk values was determined, whereas only a slight degradation was found for Pt. All layers exhibited tensile residual stresses with an average value around 131 MPa. A detailed performance model was compiled based on these measured material properties and allowed the accurate prediction of the detector's characteristics as well as an understanding of trade-offs involved in its design. In order to fully exploit the unique features of a bolometer with a single functional layer, an improved geometry based on a self-supporting serpentine structure was subsequently developed, which provides an increase in the sensitivity by a factor of four. The properties of fabricated demonstrator structures were characterized using a vacuum chamber setup. Depending on the employed layer thicknesses, the thermal time constant of the detectors was found to be in the range of 0.7 ms to 4.5 ms. These values are up to an order of magnitude faster compared to state-of-the-art bolometric detectors thanks to the comparatively low thermal mass of the free-standing structure. The sensitivity to IR radiation improved drastically with a reduction in Pt thickness and responsivities of 4×108 V/WA could be achieved for 6 nm thin Pt layers. This value corresponds to a temperature resolution (NETD) of 70 mK, which is based on the measured 1/f noise characteristics of Pt and the assumption of infrared optics with an F-number equal to one. While this new detector technology still leaves room for improvement, the achieved temperature resolution is only about a factor of two away from the performance of commercially available bolometers, which exhibit a significantly slower reaction time and have to rely on a more complicated fabrication process. In summary, we demonstrated an uncooled IR detector based on a single free- standing, sub-10 nm thin Pt layer for the first time. Its performance profits significantly from the reduction in film thickness enabled by the use of PE-ALD. The presented results and the lessons learned from this work can assist in the use of released, nanometer-thin layers for MEMS devices in other domains that can profit equally from such a development

Download or read book Infrared Detectors Based on Two dimensional Materials and Heterostructures written by Yuxuan Lin (Ph. D.) and published by . This book was released on 2019 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the nanoscale, new forms of physical phenomena emerge that can provide remarkable opportunities for next-generation tools with unprecedented functionality and energy efficiency. Two-dimensional (2D) materials, a family of nanomaterials with atomic thickness, promise an ideal platform for nanoscience and nanotechnology research on which we are able to engineer functional structures and study their properties at the limit of the atomic scale. This thesis discusses opportunities and challenges of studying emerging light-matter interaction phenomena and developing advanced infrared detection technologies enabled by 2D materials and their heterostructures. First, we addressed some of the key challenges for reliable synthesis and characterization of 2D materials and functional nanostructures. We developed a new seeding-promoter-assisted chemical vapor deposition approach for the construction of vertical and lateral heterostructures between a variety of 2D materials over large area. This technology enables many new physics and device applications, including 1D ohmic contacts to 2D semiconductors and their integrated circuits. Another material-related challenge we addressed is the fast material characterization of 2D materials. We developed a deep learning algorithm that can perform realtime, accurate material identification on optical microscope images of 2D materials. In addition, our method is able to extract deep graphical features and provide information about structural, optical and mechanical properties of the materials. Second, we studied three novel IR detector technologies based on 2D materials and other nanostructures that can potentially out-perform the state-of-the-art graphene thermopile, graphene-2D semiconductor photothermoelectric detector, and thermo-mechanical bolometer. For the graphene thermopile, our theoretical analysis indicates that a high-quality graphene device provides the highest thermoelectric figure of merit among existing thermoelectric materials. We further demonstrated a monolithic 3D integration of graphene and Si CMOS technologies and fabricated a mid-IR/thermal imaging camera based on graphene thermopiles. For the second IR detection technology, we studied the unique hot carrier thermalization process on a graphene-2D semiconductor lateral heterojunction device, and showed that such a photothermoelectric photocurrent generation mechanism is advantageous in terms of picosecond response time, broadband spectral response, and room temperature operation. The third IR detection technology we demonstrated in this thesis is a thermo-mechanical bolometer, in which the IR radiation is converted into an abrupt resistance change through the special thermo-mechanical response and an artificial metal-insulator transition of engineered nanostructures. Our results show that the sensitivity of this thermo-mechanical mid-IR detector can be at least one order of magnitude better than state-of-the-art microbolometers based on VOx.

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--

Download or read book Semiconductors and Semimetals written by Robert K. Willardson and published by . This book was released on 1980 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: