Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to Single mode Behavior Bistability and Switching written by Nada Abdullatif El-Zein and published by . This book was released on 1995 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$spcirc$C to 450$spcirc$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction. Device-quality insulating oxides are demonstrated in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1-y}$As-GaAs-$rm Insb{x}Gasb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices.
Download or read book Native Oxides on Aluminum Bearing Iii V Semiconductors With Applications to High Performance Laser Diodes written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to High Performance Laser Diodes written by Frederick Anthony Kish and published by . This book was released on 1992 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Native Oxides on Aluminum bearing III V Semiconductors written by Alan Richard Sugg and published by . This book was released on 1993 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Native Oxidation of Aluminum bearing III V Semiconductors with Applications to Edge and Surface emitting Lasers and to the Stabilization of Light Emitting Diodes written by Timothy Allen Richard and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, a water vapor oxidation process is used to convert high Al composition $rm Alsb{x}Gasb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$rmspcirc C$ to 500$rmspcirc C.$ Some of the basic properties of the native oxide are described. These properties include the insulating and diffusion masking nature of the oxide as well as the anisotropic behavior of the oxidation process. The high quality native oxide is then applied to laser devices in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1 -y}$As-GaAs-In$rmsb{x}Gasb{1-x}As$ material systems and to the stabilization of $rm Alsb{y}Gasb{1-y}As$-$rm Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ light emitting diodes. Data are presented on a high-performance native-oxide coupled-stripe $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum well heterostructure laser array realized by the "wet" oxidation of the upper $rm Alsb{y}Gasb{1-y}As$ confining layer for current definition. Also, data are presented on the (300 K and 77 K) continuous photopumped laser operation of oxide-embedded $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum-well heterostructures. The active region is sandwiched within native-oxide-semiconductor stacks. The native-oxide layers are formed after crystal growth by selectively oxidizing along high Al-composition heterolayers. The active region is shown to remain intact without any significant degradation in laser performance. The oxide-embedded laser structure is optimized for vertical-cavity laser operation utilizing large-index-step high-contrast distributed Bragg reflector mirrors formed by the selective lateral oxidation process. Edge- and vertical-cavity photopumped operations of devices with short period upper and lower mirrors are demonstrated. The vertical-cavity lasers also exhibit "hot"-carrier recombination. Finally, data are presented on the electrical behavior and the reliabillty of post-fabrication native-oxide-passivated visible-spectrum AlGaAs-In(AlGa)P p-n heterostructure light emitting diodes (LEDs). The LEDs are oxidized after metallization, thus sealing all of the exposed AlGaAs crystal at cracks, fissures, and edges against atmospheric hydrolysis without degrading their light-output characteristics. The current-voltage (I-V) characteristics of the oxide-passivated LEDs are shown to exhibit normal p-n diode behavior. Above all, the reliability of the oxidized devices in high-humidity conditions is greatly improved compared to those of otherwise identical unoxidized LEDs.
Download or read book Selective Oxidation of Aluminum Bearing III V Semiconductors with Applications to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the present work, a water vapor oxidation process is used to convert high Al-composition $rm Alsb{x}Gasb{1-x}As and Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily. Selective oxidation of quantum well heterostructure crystals is used to convert only the highest aluminum composition materials to the native oxide. In the layered heterostructures commonly used in today's optoelectronic devices, selective oxidation is a unique way to "bury" an insulating and low-refractive-index oxide both above and below semiconductor layers used in a device. This makes possible, as described here, an edge-emitting laser diode that is confined both optically and electrically by "buried" oxide layers above and below the active region. Selective oxidation of $rm Alsb{x}Gasb{1-x}As$ occurs at low enough temperatures $(400spcirc$C-500$spcirc$C) to be performed on a fully metallized laser diode without adversely affecting its electrical performance. Metallized laser diodes are oxidized from their exposed facets, resulting in edge-emitting devices with current-blocking window regions at the mirrors. The buried oxide "spike," which extends from the facet into the crystal, forms selectively in a region of high aluminum composition. The buried oxide removes the current injection from the facet region, protects the facet, and results in improved maximum output powers from the lasers. Finally, the ability to form low-index $rm(nsim1.55)$ layers of oxide between high-index semiconductor crystals facilitates the formation of high-index-contrast distributed Bragg reflecting (DBR) mirrors. The properties of these mirrors and their applications to vertical cavity surface emitting lasers and edge-emitting lasers are described.
Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors with Application to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors written by Eugene I-Chun Chen and published by . This book was released on 1996 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$sb{rm x}$Ga$sb{rm 1-x}$As (x $sbsp{sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($sbsp{sim}{>}400 spcirc$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches. Native oxide-based AlGaAs-GaAs metal-oxide-semiconductor field-effect transistor devices are fabricated via lateral oxidation of a thin AlAs layer. Data are presented demonstrating depletion-mode transistor operation. This shows that the native oxide is of sufficient quality to allow modulation of an underlying GaAs channel. Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30 A GaAs) crystal. Data are presented showing photopumped "whispering gallery mode" laser operation of $sim$37 $mu$m minidisks lasers. Finally, the IILD and oxidation process is extended to the formation of a microdisk photonic lattice. Data are presented showing that the microdisks ($sim$9 $mu$m diameter) are sufficiently coupled to form "bands" in the photopumped recombination radiation spectra.
Download or read book Preparation and Properties of CVD Aluminum Oxide Films on III V Semiconductors for MISFET Applications written by Zongyi Cheng and published by . This book was released on 1986 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Applications of III V Compound Semiconductor Native Oxides for Photonic Devices written by Yuan Tian and published by . This book was released on 2019 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Optics and Optical Computing written by S. Martellucci and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference "Nonlinear Optics and Optical Computing" was held May 11-19, 1988 in Erice, Sicily. This was the 13th conference organized by the International School of Quantum Electronics, under the auspices of the "Ettore Majorana" Center for Scientific Culture. This volume contains both the invited and contributed papers presented at the conference, providing tutorial background, the latest research results, and future directions for the devices, structures and architectures of optical computing. The invention of the transistor and the integrated circuit were followed by an explosion of application as ever faster and more complex microelectronics chips became available. The information revolution occa sioned by digital computers and optical communications is now reaching the limits of silicon semiconductor technology, but the demand for faster com putation is still accelerating. The fundamental limitations of information processing today derive from the performance and cost of three technical factors: speed, density, and software. Optical computation offers the potential for improvements in all three of these critical areas: Speed is provided by the transmission of impulses at optical veloc ities, without the delays caused by parasitic capacitance in the case of conventional electrical interconnects. Speed can also be achieved through the massive parallelism characteristic of many optical computing architec tures; Density can be provided in optical computers in two ways: by high spatial resolution, on the order of wavelengths of light, and by computa tion or interconnection in three dimensions.
Download or read book Low Dimensional Structures in Semiconductors written by A.R. Peaker and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.
Download or read book Optics of Semiconductors and Their Nanostructures written by Heinz Kalt and published by Springer Science & Business Media. This book was released on 2013-04-09 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the field of semiconductor optics has been pushed to several extremes. The size of semiconductor structures has shrunk to dimensions of a few nanometers, the semiconductor-light interaction is studied on timescales as fast as a few femtoseconds, and transport properties on a length scale far below the wavelength of light have been revealed. These advances were driven by rapid improvements in both semiconductor and optical technologies and were further facilitated by progress in the theoretical description of optical excitations in semiconductors. This book, written by leading experts in the field, provides an up-to-date introduction to the optics of semiconductors and their nanostructures so as to help the reader understand these exciting new developments. It also discusses recently established applications, such as blue-light emitters, as well as the quest for future applications in areas such as spintronics, quantum information processing, and third-generation solar cells.
Download or read book Optical Fiber Communications written by Senior John M. and published by Pearson Education India. This book was released on 2009 with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics at Surfaces written by Andrew Zangwill and published by Cambridge University Press. This book was released on 1988-03-24 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics at Surfaces is a unique graduate-level introduction to the physics and chemical physics of solid surfaces, and atoms and molecules that interact with solid surfaces. A subject of keen scientific inquiry since the last century, surface physics emerged as an independent discipline only in the late 1960s as a result of the development of ultra-high vacuum technology and high speed digital computers. With these tools, reliable experimental measurements and theoretical calculations could at last be compared. Progress in the last decade has been truly striking. This volume provides a synthesis of the entire field of surface physics from the perspective of a modern condensed matter physicist with a healthy interest in chemical physics. The exposition intertwines experiment and theory whenever possible, although there is little detailed discussion of technique. This much-needed text will be invaluable to graduate students and researchers in condensed matter physics, physical chemistry and materials science working in, or taking graduate courses in, surface science.
Download or read book Conference Papers Index written by and published by . This book was released on 1987 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Resistive Random Access Memory RRAM written by Shimeng Yu and published by Springer Nature. This book was released on 2022-06-01 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
