Download or read book NASECODE written by J. J. H. Miller and published by . This book was released on 1985 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASECODE III written by John J. H. Miller and published by . This book was released on 1983 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASECODE written by and published by . This book was released on 1987 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nasecode IV written by John James Henry Miller and published by . This book was released on 1985 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book BAIL III written by John J. H. Miller and published by . This book was released on 1984 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Approximation of Partial Differential Equations written by E.L. Ortiz and published by Elsevier. This book was released on 1987-02-01 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: This selection of papers is concerned with problems arising in the numerical solution of differential equations, with an emphasis on partial differential equations. There is a balance between theoretical studies of approximation processes, the analysis of specific numerical techniques and the discussion of their application to concrete problems relevant to engineering and science. Special consideration has been given to innovative numerical techniques and to the treatment of three-dimensional and singular problems. These topics are discussed in several of the invited papers.The contributed papers are divided into five parts: techniques of approximation theory which are basic to the numerical treatment of differential equations; numerical techniques based on discrete processes; innovative methods based on polynomial and rational approximation; variational inequalities, conformal transformation and asymptotic techniques; and applications of differential equations to problems in science and engineering.
Download or read book Technology CAD Systems written by Franz Fasching and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the cost of developing new semiconductor technology at ever higher bit/gate densities continues to grow, the value of using accurate TCAD simu lation tools for design and development becomes more and more of a necessity to compete in today's business. The ability to tradeoff wafer starts in an advanced piloting facility for simulation analysis and optimization utilizing a "virtual fab" S/W tool set is a clear economical asset for any semiconductor development company. Consequently, development of more sophisticated, accurate, physics-based, and easy-to-use device and process modeling tools will receive continuing attention over the coming years. The cost of maintaining and paying for one's own internal modeling tool development effort, however, has caused many semiconductor development companies to consider replacing some or all of their internal tool development effort with the purchase of vendor modeling tools. While some (noteably larger) companies have insisted on maintaining their own internal modeling tool development organization, others have elected to depend totally on the tools offered by the TCAD vendors and have consequently reduced their mod eling staffs to a bare minimal support function. Others are seeking to combine the best of their internally developed tool suite with "robust", "proven" tools provided by the vendors, hoping to achieve a certain synergy as well as savings through this approach. In the following sections we describe IBM's internally developed suite of TCAD modeling tools and show several applications of the use of these tools.
Download or read book The Physics of Submicron Structures written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Download or read book Large Scale Computational Device Modeling written by Karl Hess and published by . This book was released on 1986 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Devices and Processes Vol 3 written by Giorgio Baccarani and published by . This book was released on 1988 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Devices and Processes written by K. Board and published by Pine Ridge Press. This book was released on 1984 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extracta Mathematicae written by and published by . This book was released on 1993 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Analysis of Semiconductor Devices and Integrated Circuits written by B. T. Browne and published by . This book was released on 1981 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors written by W.M. Jr. Coughran and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor models and circuits. We are grateful to W.M. Coughran, Jr., Julian Cole, Peter Lloyd, and Jacob White for helping Farouk Odeh organize this activity and trust that the proceedings will provide a fitting memorial to Farouk. We also take this opportunity to thank those agencies whose financial support made the program possible: the Air Force Office of Scientific Research, the Army Research Office, the National Science Foundation, and the Office of Naval Research. A vner Friedman Willard Miller, J r. Preface to Part II Semiconductor and integrated-circuit modeling are an important part of the high technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering work stations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such mod eling.
Download or read book Finite Element and Finite Difference Methods in Electromagnetic Scattering written by M.A. Morgan and published by Elsevier. This book was released on 2013-10-22 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second volume in the Progress in Electromagnetic Research series examines recent advances in computational electromagnetics, with emphasis on scattering, as brought about by new formulations and algorithms which use finite element or finite difference techniques. Containing contributions by some of the world's leading experts, the papers thoroughly review and analyze this rapidly evolving area of computational electromagnetics. Covering topics ranging from the new finite-element based formulation for representing time-harmonic vector fields in 3-D inhomogeneous media using two coupled scalar potentials, to the consideration of conforming boundary elements and leap-frog time-marching in transient field problems involving corners and wedges in two and three dimensions, the volume will provide an indispensable reference source for practitioners and students of computational electromagnetics.
