Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

Download or read book Nanoscale Mos Transistors written by David Esseni and published by . This book was released on 2014-05-14 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-05-02 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Complemented with online lecture by Prof Lundstrom: nanoHUB-U Nanoscale Transistor Contents:MOSFET Fundamentals:OverviewThe Transistor as a Black BoxThe MOSFET: A Barrier-Controlled DeviceMOSFET IV: Traditional ApproachMOSFET IV: The Virtual Source ModelMOS Electrostatics:Poisson Equation and the Depletion ApproximationGate Voltage and Surface PotentialMobile Charge: Bulk MOSMobile Charge: Extremely Thin SOI2D MOS ElectrostaticsThe VS Model RevisitedThe Ballistic MOSFET:The Landauer Approach to TransportThe Ballistic MOSFETThe Ballistic Injection VelocityConnecting the Ballistic and VS ModelsTransmission Theory of the MOSFET:Carrier Scattering and TransmissionTransmission Theory of the MOSFETConnecting the Transmission and VS ModelsVS Characterization of Transport in NanotransistorsLimits and Limitations Readership: Any student and professional with an undergraduate degree in the physical sciences or engineering.

Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-05-29 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-07-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Download or read book Fundamentals Of Nanotransistors written by Mark S. Lundstrom and published by . This book was released on 2017 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Introduction to Nano written by Amretashis Sengupta and published by Springer. This book was released on 2015-07-01 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the basics of nanotechnology and provides a solid understanding of the subject. Starting from a brush-up of the basic quantum mechanics and materials science, the book helps to gradually build up understanding of the various effects of quantum confinement, optical-electronic properties of nanoparticles and major nanomaterials. The book covers the various physical, chemical and hybrid methods of nanomaterial synthesis and nanofabrication as well as advanced characterization techniques. It includes chapters on the various applications of nanoscience and nanotechnology. It is written in a simple form, making it useful for students of physical and material sciences.

Download or read book Nano scale CMOS Analog Circuits written by Soumya Pandit and published by CRC Press. This book was released on 2018-09-03 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.

Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

Download or read book Planar Double Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Download or read book The Source Drain Engineering of Nanoscale Germanium based MOS Devices written by Zhiqiang Li and published by Springer. This book was released on 2016-03-24 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Download or read book Carbon Based Electronics written by Ashok Srivastava and published by CRC Press. This book was released on 2015-03-19 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me

Download or read book Nanoscale VLSI written by Rohit Dhiman and published by Springer Nature. This book was released on 2020-10-03 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methodologies in the design of VLSI devices, circuits and their applications at nanoscale levels. The book begins with the discussion on the dominant role of power dissipation in highly scaled devices.The 15 Chapters of the book are classified under four sections that cover design, modeling, and simulation of electronic, magnetic and compound semiconductors for their applications in VLSI devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for ultra–low power VLSI design, potential post–CMOS devices, and their applications from the architectural and system perspectives. The book shall serve as an invaluable reference book for the graduate students, Ph.D./ M.S./ M.Tech. Scholars, researchers, and practicing engineers working in the frontier areas of nanoscale VLSI design.