Download or read book Nanocrystalline Silicon Thin Film Transistors on Plastic Substrates written by I-Chun Cheng and published by . This book was released on 2004 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanocrystalline Silicon Thin Film Transistors written by M. Bauza and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin film transistors 1 Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book The Design and Development of Nanocrystalline Silicon Thin Film Transistors written by Jarrod McDonald and published by . This book was released on 2004 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work reports on the fabrication of thin film transistor devices at low temperatures using hydrogenated-nanocrystalline silicon (nc-Si:H). Nanocrystalline silicon is a new electronic material, which is capable of being deposited at low temperatures on any substrate, and thus offers the possibility of making large area devices on flexible substrates. This work presents a design and process for fabricating 25 [mu]m length n-channel, top gate, thin film transistors. The TFTs were fabricated using hydrogenated-nanocrystalline silicon (nc-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) over a thermally oxidized silicon wafer. The deposition was done at a temperature of 300°C. Metal layers were deposited by thermal evaporation and etching steps were done via dry etching in a reactive ion etching system and by wet etching. Silicon nitride, deposited by PECVD at 300°C, was used as the dielectric material in the TFT. MIS capacitors were made to judge the quality of the silicon nitride/nc-Si:H interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that an interface defect density of approximately 4.55x1011 cm−1eV−1 was achievable with hydrogen passivation. MIM capacitors were made to determine the dielectric breakdown of the material. The silicon nitride layer broke down at an electric field of 4 MV/cm. The transistors tested have shown a threshold voltage (V[subscript TH])[nearly equal to]13.3 volts, a channel surface mobility (u)[nearly equal to].2 cm2/[V·sec] and an on-off ratio of [nearly equal to]103.
Download or read book Novel Processes for Poly si Thin film Transistors on Plastic Substrates written by Daniel Albert Good and published by . This book was released on 2007 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Nanocrystalline Silicon Thin Film Transistors written by Durga Prasanna Panda and published by . This book was released on 2006 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis, we will describe the growth and properties of p-channel nc-Si thin film transistor (TFT) devices. In contrast to previous work, a significant improvement in the hole mobility was achieved by an innovative approach of depositing nc-Si for the channel material using very high hydrogen dilution and low ion bombardment in a PECVD reactor. The doping of the body was changed by doping with ppm levels of phosphorous, and the threshold voltage was found to change systematically as phosphorus content increased. We were thus able to show that a high-quality nanocrystalline silicon material can be controllably doped in small amounts. The TFT devices are of the bottom-gate type, grown on oxidized Si wafers. Source and drain contacts were provided by using either plasma grown p type nanocrystalline layers, or by the simple process of Al diffusion. A top layer of plasma-deposited silicon dioxide was found to decrease the off current significantly. High ON/OFF current ratios exceeding 106 were obtained. Hole mobilities in the devices were consistently good, with the best mobility being in the range of ∼1.6 cm2/V-s, which is the highest so far to the best of our knowledge.
Download or read book Nanocrystalline Silicon Thin film Transistors written by Czang-Ho Lee and published by . This book was released on 2006 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistor Technologies written by Yue Kuo and published by The Electrochemical Society. This book was released on 1999 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors Using Nanocrystalline Silicon from Metal Induced Growth written by Xueli Hao and published by . This book was released on 2012 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have been well developed in over six decades. Nowadays, hydrogenated amorphous silicon (a-Si:H) has been largely used for active matrix liquid crystal display (AMLCD) in the industrial field. At the same time, nanocrystalline silicon (nc-Si) TFT has attracted more attention due to its better quality than a-Si and low costs. This thesis focused on the fabrication of nc-Si TFTs using metal-induced growth (MIG), which has been utilized in solar cell fabrication and nanowire growth. The 500 ©5 thickness palladium (Pd) was evaporated as the metal catalyst on the silicon substrate covered with silicon dioxide. The nc-Si films were deposited using two-step DC sputtering at 625 °C. The Pd was consumed to form Pd2Si at 50 W low power step, which provides the nucleation sites for nc-Si growth. Then, nc-Si films can be grown at a high deposition rate which was obtained in the 150 W high power step.^As a result, the nc-Si with around 1000 nm thickness was deposited as the active channel of the TFTs by 45 min low power and 30 min high power sputtering. The output and transfer characteristics of the TFTs were illustrated in the thesis. The field effect mobility and the threshold voltage were calculated. The performance was difficult to get saturation due to the high leakage current. The field effect mobility values were 0. 3 to 0. 6 cm2/V. s, which were relatively low. The main reasons are the existence of the grain boundaries and the intragrain defects in the channel, the metal contamination introduced by MIG, and the thick channel layer. The threshold voltage values varied from 1. 3 V to 1. 9 V, which were partially affected by the short length effect (L= 5, 10 ℗æm). In addition, the total resistances of semiconductor and metal-semiconductor contact were measured using the transmission line method (TLM).^The linear TLM and the circular TLM were both used to calculate the contact resistance, transfer length, and the specific contact resistance. The results of three kinds of samples, MIG with anneal, MIG without anneal, and non MIG, are presented and compared. The MIG with anneal samples show much lower contact resistance than that of MIG without anneal samples. The quality of the nc-Si and the ohmic contact of the junction are improved after annealing at 700 °C for 2 hours in forming gas (15% H2 and 85% N2).
Download or read book Top gate Nanocrystalline Silicon Thin Film Transistors written by Hyun Jung Lee and published by . This book was released on 2008 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs), the heart of highly functional and ultra-compact active-matrix (AM) backplanes, have driven explosive growth in both the variety and utility of large-area electronics over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have recently attracted attention as a high-performance and low-cost alternative to existing amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs, in that they have the strong potentials which a-Si:H (low carrier mobility and poor device stability) and poly-Si (poor device uniformity and high manufacturing cost) counterparts do not have. However, the current nc-Si:H TFTs expose several challenging material and devices issues, on which the dissertation focuses.
Download or read book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors written by Kyung-Wook Shin and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have brought prominent growth in both variety and utility of large area electronics market over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have attracted attention recently, due to high-performance and low-cost, as an alternative of amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs. The nc-Si:H TFTs has higher carrier mobility and better device stability than a-Si:H TFTs while lower manufacturing cost than poly-Si TFTs. However, current nc-Si:TFTs have several challenging issues on materials and devices, on which this thesis focuses. In the material study, the gate quality silicon nitride (a-SiNx) films and doped nc-Si:H contacts based on conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. The feasibility of a-SiNx on TFT application is discussed with current-voltage (I-V)/capacitance-voltage(C-V) measurement and Fourier Transform Infrared Spectroscopy (FTIR) results which demonstrate 4.3 MV/cm, relative permittivity of 6.15 and nitrogen rich composition. The doped nc-Si:H for contact layer of TFTs is characterized with Raman Spectroscopy and I-V measurements to reveal 56 % of crystalinity and 0.42 S/cm of dark conductivity. Inverted staggered TFT structure is fabricated for nc-Si:H TFT device research using fully wet etch fabrication process which requires five lithography steps. The process steps are described in detail as well as adaptation of the fabrication process to a backplane fabrication for direct conversion X-ray imagers. The modification of TFT process for backplane fabrication involves two more lithography steps for mushroom electrode formation while other pixel components is incorporated into the five lithography step TFT process. The TFTs are electrically characterized demonstrating 7.22 V of threshold voltage, 0.63 S/decade of subthreshold slope, 0.07 cm2/V-s of field effect mobility, and 106 of on/off ratio. The transfer characteristics of TFTs reveal a severe effect of parasitic resistance which is induced from channel layer itself, a contact between channel layer and doped nc-Si:H contact layer, the resistance of doped nc-Si:H contact layer, and a contact between the doped nc-Si:H layer and source/drain metal electrodes. The parasitic resistance effect is investigated using numerical simulation method by various parasitic resistances, channel length of the TFT, and intrinsic properties of nc-Si:H channel layer. It reveals the parasitic resistance effect become severe when the channel is short and has better quality, therefore, several further research topics on improving contact nc-Si:H quality and process adjustment are required.
Download or read book Thin Film Transistor Technologies VI written by Yue Kuo and published by The Electrochemical Society. This book was released on 2003 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Kluwer Academic Pub. This book was released on 2004 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Download or read book Thin Film Transistor Technology 8 written by Yue Kuo and published by The Electrochemical Society. This book was released on 2006 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue includes funadmental and applied topics on materials, processes, devices, circuits, and new and novel applicaitons related to TFTs.
Download or read book Polycrystalline Silicon Thin film Transistor Technology for Flexible Large area Electronics written by Yeh-Jiun Tung and published by . This book was released on 2001 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Poly silicon Thin Film Transistor Technology and Applications in Display and Other Novel Technology Areas written by Apostolos T. Voutsas and published by SPIE-International Society for Optical Engineering. This book was released on 2003 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
