Download or read book Multilayer Thin Film Oxides for Resistive Switching written by Zheng Jie Tan and published by . This book was released on 2019 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: Resistive switching devices are hotly being pursued for use as the fundamental units in next-generation hardware deep-learning or neuromorphic systems. However, these devices are still tricky both to fabricate and to operate with consistency. We present strategies which guarantees that switching devices are functional post-fabrication, and with switching cycles that are consistent both from cycle-to-cycle and device-to-device. The resistance of all observed high and low resistance states (HRS/LRS) spanned just 0.23 and 0.19 decades on the logarithm scale across all devices, with both states spanning 0.05 within single devices and all SET transitions falling within a 0.3V span in our multilayer FIB-processed device. DFT simulations suggest that Au atoms from the top metal electrode implanted deeper in the device by FIB would serve as bridging atoms for oxygen vacancies filament by promoting the formation of these vacancies. In addition, multilayer thin oxide films reduce the stochasticity of filament formation and further improves the switching consistency. This strategy for high consistency resistive switching devices was subsequently exploited for a few purposes. Firstly, multi-bit switching was demonstrated to yield approximately 7 distinguishable states with a single blind set, i.e, without having to program current compliances or use iterative schemes. Secondly, further insights into the SET and RESET mechanisms using pulsed measurements could be obtained since switching stochasticity no longer obscures subtle trends in experimental data. The implications of this study goes beyond the demonstration of a single high consistency device. Future understandings in resistive switching devices shall be achieved more easily since causality between processing parameters and device behaviors can now be quickly established under the significant reduction in switching stochasticity. The new degrees of freedom introduced here in designing resistive switching devices will also hasten the search for an optimal device, bringing forward the realization of large scale resistive RAM arrays for machine learning or hardware neuromorphic computing applications towards a nearer future.

Download or read book Metal Oxide Based Thin Film Structures written by Nini Pryds and published by Elsevier. This book was released on 2017-09-07 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike

Download or read book Integration of Multi functional Oxide Thin Film Heterostructures with III V Semiconductors written by Md Shafiqur Rahman and published by . This book was released on 2017 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr0.3MnO3 (LSMO) and room temperature multiferroic BiFeO3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with LSMO on GaAs substrate also facilitated the demonstration of resistive random access memory (ReRAM) devices which can be faster with lower energy consumption compared to present commercial technologies. Ferroelectric switching observations using piezoresponse force microscopy show polarization switching demonstrating its potential for read-write operation in NVM devices. The ferroelectric and electrical characterization exhibit strong resistive switching with low SET/RESET voltages. Furthermore, a prototypical epitaxial field effect transistor based on multiferroic BFO as the gate dielectric and ferromagnetic LSMO as the conducting channel was also demonstrated. The device exhibits a modulation in channel conductance with high ON/OFF ratio. The measured nanostructure and physical-compositional results from the multilayer are correlated with their corresponding dielectric, piezoelectric, and ferroelectric properties. These results provide an understanding of the heteroepitaxial growth of ferroelectric (FE)-antiferromagnetic (AFM) BFO on ferromagnetic LSMO as a simple thin film or superlattice structure, integrated on STO buffered GaAs (001) with full control over the interface structure at the atomic-scale. This work also represents the first step toward the realization of magnetoelectronic devices integrated with GaAs (001).

Download or read book Thin Film Metal Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.

Download or read book Oxide Thin Films Multilayers and Nanocomposites written by Paolo Mele and published by Springer. This book was released on 2015-03-26 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the science of nanostructured oxides. It details the fundamental techniques and methodologies involved in oxides thin film and bulk growth, characterization and device processing, as well as heterostructures. Both, experts in oxide nanostructures and experts in thin film heteroepitaxy, contribute the interactions described within this book.

Download or read book Resistive switching in ZrO2 based metal oxide metal structures written by Irina Kärkkänen and published by Forschungszentrum Jülich. This book was released on 2014 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Solution Synthesis for Materials Design and Thin Film Device Applications written by Soumen Das and published by Elsevier. This book was released on 2021-01-09 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance on material synthesis and device fabrication through wet chemical routes. - Provides the different wet chemical routes for materials synthesis, along with the most relevant thin film structured materials for device applications - Discusses patterning and solution processing of inorganic thin films, along with solvent-based processing techniques - Includes an overview of key processes and methods in thin film synthesis, processing and device fabrication, such as nucleation, lithography and solution processing

Download or read book Resistive Switching in Ferroelectric Polycrystalline Yttrium Manganese Oxide Thin Films written by Venkata Rao Rayapati and published by . This book was released on 2022* with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Doping Controlled Resistive Switching Dynamics in Transition Metal Oxide Thin Films written by Maria Trapatseli and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Download or read book Transition Metal Oxide Thin Film Based Chromogenics and Devices written by Pandurang Ashrit and published by Elsevier. This book was released on 2017-05-18 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The phase transition and the reversible optical and electrical switching that occur in chromogenic materials under the influence of external forces such as heat, light, and electric field are topics of enormous scientific interest. Transition Metal Oxide Thin Film–Based Chromogenics and Devices discusses experimental and theoretical developments in the field of chromogenics based on the transition metal oxide (TMO) thin films. Understanding the relationship between the switching properties of TMO materials and their nanostructure is of paramount importance in developing efficient chromogenic devices. The tailoring of these switching behaviors is afforded detailed coverage in this book, alongside in-depth discussion of a range of chromogenic materials and devices, including photochromics, thermochromics, and electrochromics. Transition Metal Oxide Thin Film–Based Chromogenics and Devices covers both the theoretical aspects of TMO thin film–based chromogenics and their engineering applications in device construction. Academics and professionals in the fields of materials science and optics will find this book to be a key resource, whether their focus is low-dimension materials, light-materials interactions, or device development. - Enables researchers to keep up with developments in thin film–based chromogenics - Provides detailed coverage of the switching mechanism of the various TMO thin films to assist readers in developing more efficient devices - Offers in-depth discussion of a range of chromogenic materials and devices, including thermochromics, photochromics, and electrochromics

Download or read book Resistive Switching Oxide Materials Mechanisms Devices and Operations written by Jennifer Rupp and published by Springer Nature. This book was released on 2021-10-15 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Download or read book Multilayer Thin Films written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2020-01-15 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, "Multilayer Thin Films-Versatile Applications for Materials Engineering", includes thirteen chapters related to the preparations, characterizations, and applications in the modern research of materials engineering. The evaluation of nanomaterials in the form of different shapes, sizes, and volumes needed for utilization in different kinds of gadgets and devices. Since the recently developed two-dimensional carbon materials are proving to be immensely important for new configurations in the miniature scale in the modern technology, it is imperative to innovate various atomic and molecular arrangements for the modifications of structural properties. Of late, graphene and graphene-related derivatives have been proven as the most versatile two-dimensional nanomaterials with superb mechanical, electrical, electronic, optical, and magnetic properties. To understand the in-depth technology, an effort has been made to explain the basics of nano dimensional materials. The importance of nano particles in various aspects of nano technology is clearly indicated. There is more than one chapter describing the use of nanomaterials as sensors. In this volume, an effort has been made to clarify the use of such materials from non-conductor to highly conducting species. It is expected that this book will be useful to the postgraduate and research students as this is a multidisciplinary subject.

Download or read book Metal Oxides for Optoelectronic and Resistive Switching Applications written by Oriol Blázquez and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Thesis has been focused on the fabrication and characterization of different CMOS- compatible materials in order to determine both their electro-optical and resistive switching properties. Basically, two materials have been explored, silicon-aluminum oxynitride (SiAlON) and zinc oxide (ZnO). The first material under study, SiAlON, has been fabricated using three techniques, namely RF-sputtering, pulsed-laser deposition and electron beam evaporation. In this case, different stoichiometries were analyzed in order to obtain excellent optical and electrical properties. The incorporation of different rare earths (REs) was also carried out, using Ce and Eu, which exhibited photoluminescence (PL) emission under laser excitation. The electro-optical characterization was performed after fabricating device structures onto p-type silicon substrates. The employed top electrode was selected depending on the characterization technique. To collect the electroluminescence (EL) from the devices a transparent conductive oxide (TCO) was required, using indium tin oxide (ITO) because of its excellent electrical and optical properties. Light emission was obtained from both devices, containing Ce and Eu, suggesting that SiAlON is a great candidate to be employed as RE host matrix. In addition, the resistive switching properties of these devices were analyzed as well, using Al as top electrical contact. Similar fabrication processes were carried out towards attaining rare earth (RE)-doped SiAlON. This was achieved by depositing a multilayered structure of Tb-Al/SiO2, which allowed determining the RE ions inclusion effectivity of the delta-doping approach. The optical characterization demonstrated PL emission from trivalent Tb3+ ions. Different (Al/Tb/SiO2) multilayer configurations were tested to optimize the number of active luminescent centers. Finally, the resistive switching properties of RE-doped SiO2 were also analyzed and the role of the RE ions within was explored as well. The second studied material was ZnO. In this case, the material was deposited onto p- type silicon via either RF-sputtering or atomic layer deposition (ALD) depending on the role of the deposited layer. While the first one was used to deposit the ZnO as RE host matrix, the second one was employed to attain a ZnO layer acting as TCO top electrode. In the first case, different REs (Tb and Eu) were tested. A clear PL emission of both REs was obtained. The narrow peak-like features in the spectra indicate the optical activation of the trivalent RE ions, being the ZnO an optimum host matrix for this kind of luminescent centers. To carry out the electrical characterization, device structures were attained using ITO as top TCO electrode. The EL from these devices was obtained, achieving similar spectra than the ones observed via PL. However, the luminescent degradation with time suggests the formation of conductive paths which effectively quench the EL emission. Taking into account this behavior, the resistive switching properties of these devices were analyzed, obtaining different cycles. The role of the REs in the resistive switching properties of ZnO was studied as well, allowing for a reduction of the current compliance in the electroforming process, but increasing the required voltages to induce the resistive switching phenomenon. Moreover, the incorporation of the REs into the ZnO host matrix permitted obtaining more stable Reset processes, which suggests that the REs near the conductive paths could trap part of the out-diffused oxygen ions and, consequently, the re-oxidation of these conductive paths becomes easier. Finally, when using a ZnO layer as top electrical contact, a multilayered SiOx/SiO2 structure was employed. After deposition, this structure was annealed at high temperature in order to induce the precipitation and crystallization of the silicon excess in the form of silicon nanocrystals (Si-NCs). The optical and electrical properties of these nanostructures are well known and have reported in previous works and doctoral theses of the research group. Therefore, the incorporation of the ZnO as TCO was implemented to determine the EL of the Si-NCs when current is injected under different electrical polarizations. Studies in DC and AC have been carried out, obtaining interesting results related to the modulation of the light emission from ZnO defects and enhancing the EL emission from the Si-NCs. The incorporation of a thin Si3N4 inversion layer, between the Si substrate and the multilayered Si-NCs, allowed modifying the injected current, thus obtaining an enhancement of the EL emission. These measurements confirmed the good electrical and optical properties of the ZnO working as TCO and permitted to understand the physical mechanisms involved in the EL process of the luminescent centers. In addition, the resistive switching properties of these devices were determined. In this case, devices presented some cycles with well defined resistive states. Under these resistive switching conditions, devices exhibit EL emission, being the intensity and the threshold voltage dependent on the resistive state. In conclusion, the results presented in this Thesis accomplish the initial pursued objectives, demonstrating the correlation between the EL emission and the resistive switching properties. Using these characteristics, the resistive state can be read not only electrically, but also optically from the emission of the luminescent centers through the TCO top electrode contact. Overall, these results pave the way to a new set of memory devices that can be, in a near future, integrated into the Photonics field, dominated by faster interconnections and less dependence to material transmission media.

Download or read book Nanocomposite Thin Films and Coatings written by Sam Zhang and published by Imperial College Press. This book was released on 2007 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials development has reached a point where it is difficult for a single material to satisfy the needs of sophisticated applications in the modern world. Nanocomposite films and coatings achieve much more than the simple addition of the constitutents OCo the law of summation fails to work in the nano-world. This book encompasses three major parts of the development of nanocomposite films and coatings: the first focuses on processing and properties, the second concentrates on mechanical performance, and the third deals with functional performance, including wide application areas ranging from mechanical cutting to solar energy and from electronics to medicine. Sample Chapter(s). Chapter 1: Magnetron Sputtered Hard and Yet Tough Nanocomposite Coatings With Case Studies: Nanocrystalline Tin Embedded in Amorphous SiNx (187 KB). Contents: Magnetron Sputtered Hard and Yet Tough Nanocomposite Coatings with Case Studies: Nanocrystalline TiN Embedded in Amorphous SiN x (S Zhang et al.); Magnetron Sputtered Hard and Yet Tough Nanocomposite Coatings with Case Studies: Nanocrystalline TiC Embedded in Amorphous Carbon (S Zhang et al.); Properties of Chemical Vapor Deposited Nanocrystalline Diamond and Nanodiamond/Amorphous Carbon Composite Films (S C Tjong); Synthesis, Characterization and Applications of Nanocrystalline Diamond Films (Z-Q Xu & A Kumar); Properties of Hard Nanocomposite Thin Films (J Musil); Nanostructured, Multifunctional Tribological Coatings (J J Moore et al.); Nanocomposite Thin Films for Solar Energy Conversion (Y-B Yin); Application of Silicon Nanocrystal in Non-Volatile Memory Devices (T P Chen); Nanocrystalline Silicon Films for Thin Film Transistor and Optoelectronic Applications (Y-J Choi et al.); Amorphous and Nanocomposite Diamond-Like Carbon Coatings for Biomedical Applications (T I T Okpalugo et al.); Nanocoatings for Orthopaedic and Dental Application (W-Q Yan). Readership: Undergraduates, postgraduates, researchers, scientists, college and university professors, research professionals, technology investors and developers, research enterprises, R&D research laboratories, academic and research libraries."

Download or read book Advances in Memristor Neural Networks written by Calin Ciufudean and published by BoD – Books on Demand. This book was released on 2018-10-03 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays, scientific research deals with alternative solutions for creating non-traditional computing systems, such as neural network architectures where the stochastic nature and live dynamics of memristive models play a key role. The features of memristors make it possible to direct processing and analysis of both biosystems and systems driven by artificial intelligence, as well as develop plausible physical models of spiking neural networks with self-organization. This book deals with advanced applications illustrating these concepts, and delivers an important contribution for the achievement of the next generation of intelligent hybrid biostructures. Different modeling and simulation tools can deliver an alternative to funding the theoretical approach as well as practical implementation of memristive systems.