Download or read book Mosfet Technologies written by A. H. Agajanian and published by Springer. This book was released on 2012-03-19 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.
Download or read book Mosfet Technologies written by A. H. Agajanian and published by Springer. This book was released on 2013-05-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metal-oxide-semiconductor field-effect transistor (MOSFET) was invented in 1960. The processing technology required for suc cessful high volume fabrication became available in 1968. The use of doped polycrystalline silicon as the gate electrode, instead of aluminum or some other metal, resulted in substantial enhancement in performance. Efforts to improve the properties of MOS devices produced new structures such as: CMOS, MNOS, SOS, VMOS, DMOS, FAMOS, etc. In recent years a great deal of work has been done to study the fabrication and properties of MOSFET's. There are two reasons for this huge interest in this subiect: (1) higher density of device per chip, (2) higher yields and lower costs. Both of these factors make MOSFET's more competitive than bipolar transistors for VLSI purposes. This book is a comprehensive bibliography of of over 4400 references of the world literature in MOSFET technologies. It also includes the literature on charge-coupled devices and GaAs FET's.
Download or read book MOSFET TECHNOLOGIES A COMPREHENSIVE BIBLIOGR written by Arthur H. Agajanian and published by . This book was released on 1980 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book MOSFET Theory and Design written by R. M. Warner and published by Oxford University Press on Demand. This book was released on 1999 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter. Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models. MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Download or read book Silicon Materials Science and Technology written by Howard R. Huff and published by The Electrochemical Society. This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Materials Science and Technology written by and published by The Electrochemical Society. This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Custom Specific Integrated Circuits written by Hurst and published by CRC Press. This book was released on 1985-03-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the semiconductor industry, cutting basic design time of microelectronics is by far the most cost-effective measure for keeping production budgets in line. Custom-Specific Integrated Circuits thoroughly considers the various methods available to reduce the design time of a microelectronic circuit to fit a specialized requirement! This important work explores the principles of both bipolar and MOS technologies, and provides in-depth coverage of the many avenues which enable system designers to incorporate specific needs into an integrated-circuit form. Comprehensive and up-to-date, this reference compares and contrasts all the techniques of custom an semicustom design and fabrication, including programmable arrays, masterslice arrays, cell libraries, and full custom ... examines the principles of placement and routing of regular structures ... presents convenient chapter summaries for quick review of essential material ... and offers physics fundamentals for basic understanding while concentrating on practical system design. Ideal for both the practicing engineer and graduate-level engineering student, this outstanding book gives electrical, electronic, design, computer, mechanical, and control engineers, as well as electrical, electronic, and computer science engineering students, the contemporary, "hands-on" coverage needed to master Custom-Specific Integrated Circuits. Book jacket.
Download or read book A Guide to the Literature of Electrical and Electronics Engineering written by Susan Ardis and published by . This book was released on 1987 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mosfet in Circuit Design written by and published by . This book was released on 1967 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Choice written by and published by . This book was released on 1989 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and published by John Wiley & Sons. This book was released on 2016-02-23 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Download or read book Monographic Series written by Library of Congress and published by . This book was released on with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book New Technical Books written by New York Public Library and published by . This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Oxide Handbook written by Grigoriĭ Valentinovich Samsonov and published by Springer. This book was released on 1982-02 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the comparatively short amount of time since the publi cation of the first edition of this handbook in 1969, the authors continued to work on the collection and treatment of data on oxide properties that have appeared in the literature. The numerous responses that we have received during this time have given in disputable evidence of the value of such a reference book to scientists, production engineers, and instructors, and these com ments have also provided grounds for publishing a new edition of this book. In preparing the second edition, the authors reviewed crit ically the material in the first edition of the handbook, updated obsolete information, and added new material to certain chapters. Of major assistance in defining the scope of the revision were the comments of Prof. S. G. Tresvyatskii, Prof. A. I. Avgustinik, Prof. E. K. Keler, Prof. K. K. Strelov, Dr. A. N. Borisenko, Dr. D. S. Rutman, and many others, to whom the authors wish to ex press their deep gratitude. The structure of the second edition of this handbook has not undergone any major changes; however, certain corrections and improvements have been made in the content of certain chapters.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
