Download or read book Publications Combined Over 100 Studies In Nanotechnology With Medical Military And Industrial Applications 2008 2017 written by and published by Jeffrey Frank Jones. This book was released on with total page 7322 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over 7,300 total pages ... Just a sample of the contents: Title : Multifunctional Nanotechnology Research Descriptive Note : Technical Report,01 Jan 2015,31 Jan 2016 Title : Preparation of Solvent-Dispersible Graphene and its Application to Nanocomposites Descriptive Note : Technical Report Title : Improvements To Micro Contact Performance And Reliability Descriptive Note : Technical Report Title : Delivery of Nanotethered Therapies to Brain Metastases of Primary Breast Cancer Using a Cellular Trojan Horse Descriptive Note : Technical Report,15 Sep 2013,14 Sep 2016 Title : Nanotechnology-Based Detection of Novel microRNAs for Early Diagnosis of Prostate Cancer Descriptive Note : Technical Report,15 Jul 2016,14 Jul 2017 Title : A Federal Vision for Future Computing: A Nanotechnology-Inspired Grand Challenge Descriptive Note : Technical Report Title : Quantifying Nanoparticle Release from Nanotechnology: Scientific Operating Procedure Series: SOP C 3 Descriptive Note : Technical Report Title : Synthesis, Characterization And Modeling Of Functionally Graded Multifunctional Hybrid Composites For Extreme Environments Descriptive Note : Technical Report,15 Sep 2009,14 Mar 2015 Title : Equilibrium Structures and Absorption Spectra for SixOy Molecular Clusters using Density Functional Theory Descriptive Note : Technical Report Title : Nanotechnology for the Solid Waste Reduction of Military Food Packaging Descriptive Note : Technical Report,01 Apr 2008,01 Jan 2015 Title : Magneto-Electric Conversion of Optical Energy to Electricity Descriptive Note : Final performance rept. 1 Apr 2012-31 Mar 2015 Title : Surface Area Analysis Using the Brunauer-Emmett-Teller (BET) Method: Standard Operating Procedure Series: SOP-C Descriptive Note : Technical Report,30 Sep 2015,30 Sep 2016 Title : Stabilizing Protein Effects on the Pressure Sensitivity of Fluorescent Gold Nanoclusters Descriptive Note : Technical Report Title : Theory-Guided Innovation of Noncarbon Two-Dimensional Nanomaterials Descriptive Note : Technical Report,14 Feb 2012,14 Feb 2016 Title : Deterring Emergent Technologies Descriptive Note : Journal Article Title : The Human Domain and the Future of Army Warfare: Present as Prelude to 2050 Descriptive Note : Technical Report Title : Drone Swarms Descriptive Note : Technical Report,06 Jul 2016,25 May 2017 Title : OFFSETTING TOMORROW'S ADVERSARY IN A CONTESTED ENVIRONMENT: DEFENDING EXPEDITIONARY ADVANCE BASES IN 2025 AND BEYOND Descriptive Note : Technical Report Title : A Self Sustaining Solar-Bio-Nano Based Wastewater Treatment System for Forward Operating Bases Descriptive Note : Technical Report,01 Feb 2012,31 Aug 2017 Title : Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics Descriptive Note : Technical Report,26 Sep 2011,25 Sep 2015 Title : Modeling and Experiments with Carbon Nanotubes for Applications in High Performance Circuits Descriptive Note : Technical Report Title : Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics (Per5 E) Descriptive Note : Technical Report,01 Oct 2011,28 Jun 2017 Title : High Thermal Conductivity Carbon Nanomaterials for Improved Thermal Management in Armament Composites Descriptive Note : Technical Report Title : Emerging Science and Technology Trends: 2017-2047 Descriptive Note : Technical Report Title : Catalysts for Lightweight Solar Fuels Generation Descriptive Note : Technical Report,01 Feb 2013,31 Jan 2017 Title : Integrated Real-Time Control and Imaging System for Microbiorobotics and Nanobiostructures Descriptive Note : Technical Report,01 Aug 2013,31 Jul 2014

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

Download or read book Computer Control Abstracts written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1986 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Download or read book Random Telegraph Signals in Semiconductor Devices written by Eddy Simoen and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Download or read book Science Citation Index written by and published by . This book was released on 1995 with total page 2544 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1964- have guides and journal lists.

Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company Incorporated. This book was released on 2018 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Download or read book Thermally Aware Design written by Yong Zhan and published by Now Publishers Inc. This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of analysis and optimization techniques for thermally-aware chip design.

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.