Download or read book Molecular Beam Epitaxy Growth of AlGaN GaN Quantum Wells and Investigation of Excitonic and Intersubband Transitions written by Ian Friel and published by . This book was released on 2005 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: This dissertation addresses the epitaxial growth, structural and optoelectronic properties, and novel device applications of Al x Ga 1-x N/GaN multiple quantum wells. The investigated structures were grown both heteroepitaxially and homoepitaxially by plasma-assisted molecular beam epitaxy. Structural properties were determined by high resolution x-ray diffraction, scanning electron microscopy and atomic force microscopy. Excitonic recombination and absorption was investigated by a combination of photoluminescence, lateral photocurrent spectroscopy and electroabsorption spectroscopy.
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Download or read book Optical Investigation of Molecular Beam Epitaxy AlxGal xN to Determine Material Quality written by Judith L. McFall and published by . This book was released on 2000-03-01 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN and GaN have gained attention in the last few years for their applications in the blue and ultraviolet (Uv) wavelength range. However, the majority of the attention has been directed to studying GaN rather than AlGaN. AlGaN is however of great interest militarily since it has a wide, direct band gap, which makes it suitable for various applications in the military such as plume detection and threat warning systems. Cathodoluminescence (CL), photoluminescence (PL), and optical absorption were used to characterize AlGaN samples grown by molecular beam epitaxy (MBE). These samples utilized an AIN buffer layer to match the AlGaN epilayer to the sapphire substrate. CL was run at four different beam energies (2, 5, 10, and 15 keV) with four different beam currents (1, 10, 50, and 90 or 100 microA) on a GaN standard, the AlGaN samples, and the MN buffer layer. PL was performed in an attempt to distinguish DAP transitions that were not observed in CL. PL was done on the GaN standard and the ALGaN samples (x =0.10,0.20, and 0.30). Optical absorption measurements were performed to get an estimate of the band gap energies for comparison to those obtained in CL and PL. CL and PL were performed at liquid helium temperatures and optical absorption was performed at room temperature. AlGaN with different mole fractions of aluminum (x =0.10,0.20,0.30,0.40, and 0.50) was studied. Each sample was doped with approximately 10 to the 18th power/cu cm silicon atoms. The major finding of this study was that MBE is a good method for growing ALGaN with mole fraction of aluminum less than x = 0.30. Above this mole fraction, either a different growth technique or modifications to the MBE growth cycle are necessary to obtain quality material for semiconductor devices.
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Pergamon. This book was released on 1980 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Download or read book Papers from the 16th North American Conference on Molecular Beam Epitaxy written by North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.) and published by . This book was released on 1998 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxial Growth of GaAsSbN GaAs Quantum Wells for 1 3 1 5 Um Emission written by David L. Jones and published by . This book was released on 2003 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single quantum well (QW) structures of GaAsSbN/GaAs have been grown by molecular beam epitaxy (MBE). Systematic study of the growth and low temperature photoluminescence (PL) spectra was carried out as a function of growth temperature, As/Sb ratio and N pressure. In-situ reflection high energy electron diffraction (RHEED) characterization was carried out to evaluate the growth process. The effect of annealing on the PL spectra and higher PL intensities was also examined. Significant blue shifts in PL peak positions with laser intensity were observed. PL wavelengths as long as 1.5 um were achieved.
Download or read book Papers from the 23rd North American Conference on Molecular Beam Epitaxy written by Gerry Sullivan and published by . This book was released on 2006 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy for Research on Quantum Well Structures written by George N. Maracas and published by . This book was released on 1987 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proposed was the purchase of a Molecular Beam Epitaxy (MBE) system as the key instrument to establish a coherent, interdisciplinary research program in the area of quantum well structure research. The system will have two growth chambers instead of the proposed single chamber. One is a conventional solid source MBE systm and the other is the novel gas source MBE with organometallic sources. Our growth capability is thus enhanced by the acquisition of a system in which pioneering materials research can be performed. Custom modifications to the growth systems have been incorporated to allow non-standard, in situe MBE analytical studies to be performed. It is believed that our MBE system is at present unique in a US university. These programs will concentrate on basic material growth kinetics in gas source MBE, heterojunction and multi-quantum well (MQW) electronic and optical properties and devices for integrated optoelectronics.
Download or read book Papers from the 23rd North American Conference on Molecular Beam Epitaxy written by North American Conference on Molecular Beam Epitaxy and published by . This book was released on 2006 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Behaviors of InN GaN Multiple Quantum Wells by Plasma assisted Molecular Beam Epitaxy written by Chen Li and published by . This book was released on 2018 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
