Download or read book Major Applications of Carbon Nanotube Field Effect Transistors CNTFET written by Raj, Balwinder and published by IGI Global. This book was released on 2019-12-06 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.

Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Download or read book Current Transport Modeling of Carbon Nanotubes written by Jose Mauricio Marulanda and published by Current transport in CNTs. This book was released on with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Complexity Arithmetic Circuit Design in Carbon Nanotube Field Effect Transistor Technology written by K. Sridharan and published by Springer Nature. This book was released on 2020-08-19 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces readers to the emerging carbon nanotube field-effect transistor (CNTFET) technology, and examines the problem of designing efficient arithmetic circuits in CNTFET technology. Observing that CNTFETs make it possible to achieve two distinct threshold voltages merely by altering the diameter of the carbon nanotube used, the book begins by discussing the design of basic ternary logic elements. It then examines efficient CNTFET-based design of single and multiple ternary digit adders by judicious choice of unary operators in ternary logic, as well as the design of a ternary multiplier in CNTFET technology, and presents detailed simulation results in HSPICE. Lastly, the book outlines a procedure for automating the synthesis process and provides sample code in Python.

Download or read book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor written by Iraj Sadegh Amiri and published by Springer. This book was released on 2017-10-29 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

Download or read book Carbon Nanotube Electronics written by Ali Javey and published by Springer Science & Business Media. This book was released on 2009-04-21 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.

Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company Incorporated. This book was released on 2018 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.

Download or read book Carbon Nanomaterial Electronics Devices and Applications written by Arnab Hazra and published by Springer Nature. This book was released on 2021-05-22 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together selective and specific chapters on nanoscale carbon and applications, thus making it unique due to its thematic content. It provides access to the contemporary developments in carbon nanomaterial research in electronic applications. Written by professionals with thorough expertise in similar broad area, the book is intended to address multiple aspects of carbon research in a single compiled edition. It targets professors, scientists and researchers belonging to the areas of physics, chemistry, engineering, biology and medicine, and working on theory, experiment and applications of carbon nanomaterials.

Download or read book High Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Download or read book Electronic Systems and Intelligent Computing written by Pradeep Kumar Mallick and published by Springer Nature. This book was released on 2020-09-22 with total page 1126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected, high-quality research papers from the International Conference on Electronic Systems and Intelligent Computing (ESIC 2020), held at NIT Yupia, Arunachal Pradesh, India, on 2 – 4 March 2020. Discussing the latest challenges and solutions in the field of smart computing, cyber-physical systems and intelligent technologies, it includes papers based on original theoretical, practical and experimental simulations, developments, applications, measurements, and testing. The applications and solutions featured provide valuable reference material for future product development.

Download or read book Handbook of Research on Nanoelectronic Sensor Modeling and Applications written by Ahmadi, Mohammad Taghi and published by IGI Global. This book was released on 2016-09-20 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics are a diverse set of materials and devices that are so small that quantum mechanics need to be applied to their function. The possibilities these devices present outweigh the difficulties associated with their development, as biosensors and similar devices have the potential to vastly improve our technological reach. The Handbook of Research on Nanoelectronic Sensor Modeling and Applications begins with an introduction of the fundamental concepts of nanoelectronic sensors, then proceeds to outline in great detail the concepts of nanoscale device modeling and nanoquantum fundamentals. Recent advances in the field such as graphene technology are discussed at length in this comprehensive handbook, ideal for electrical engineers, advanced engineering students, researchers, and academics.

Download or read book Design and Modeling of Low Power VLSI Systems written by Sharma, Manoj and published by IGI Global. This book was released on 2016-06-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.

Download or read book Tunnel Field effect Transistors TFET written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.

Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.

Download or read book Carbon Nanotubes written by Jose Mauricio Marulanda and published by BoD – Books on Demand. This book was released on 2011-08-01 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon nanotubes (CNTs), discovered in 1991, have been a subject of intensive research for a wide range of applications. In the past decades, although carbon nanotubes have undergone massive research, considering the success of silicon, it has, nonetheless, been difficult to appreciate the potential influence of carbon nanotubes in current technology. The main objective of this book is therefore to give a wide variety of possible applications of carbon nanotubes in many industries related to electron device technology. This should allow the user to better appreciate the potential of these innovating nanometer sized materials. Readers of this book should have a good background on electron devices and semiconductor device physics as this book presents excellent results on possible device applications of carbon nanotubes. This book begins with an analysis on fabrication techniques, followed by a study on current models, and it presents a significant amount of work on different devices and applications available to current technology.

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.