Download or read book Modeling of III V Nanoscale Field effect Transistors for Logic Circuits written by Saeroonter Oh and published by Stanford University. This book was released on 2010 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.
Download or read book Modeling of III V Nanoscale Field effect Transistors for Logic Circuits written by Saeroonter Oh and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.
Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Download or read book Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and published by Bentham Science Publishers. This book was released on 2023-12-20 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Download or read book Nanoscale VLSI written by Rohit Dhiman and published by Springer Nature. This book was released on 2020-10-03 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methodologies in the design of VLSI devices, circuits and their applications at nanoscale levels. The book begins with the discussion on the dominant role of power dissipation in highly scaled devices.The 15 Chapters of the book are classified under four sections that cover design, modeling, and simulation of electronic, magnetic and compound semiconductors for their applications in VLSI devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for ultra–low power VLSI design, potential post–CMOS devices, and their applications from the architectural and system perspectives. The book shall serve as an invaluable reference book for the graduate students, Ph.D./ M.S./ M.Tech. Scholars, researchers, and practicing engineers working in the frontier areas of nanoscale VLSI design.
Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Download or read book Fundamentals Of Nanotransistors written by Mark S Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Download or read book Advanced Field Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Download or read book Microelectronic Devices Circuits and Systems written by V. Arunachalam and published by Springer Nature. This book was released on 2021-08-02 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes selected papers from the Second International Conference on Microelectronic Devices, Circuits and Systems, ICMDCS 2021, held in Vellore, India, in February 2021. The 32 full papers and 6 short papers presented were thoroughly reviewed and selected from 103 submissions. They are organized in the topical sections on digital design for signal, image and video processing; VLSI testing and verification; emerging technologies and IoT; nano-scale modelling and process technology device; analog and mixed signal design; communication technologies and circuits; technology and modelling for micro electronic devices; electronics for green technology.
Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Download or read book Micro and Nanoelectronics Devices Circuits and Systems written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2023-10-04 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2023). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.
Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.