Download or read book Modeling of Gallium Arsenide Heterojunction Bipolar Transistor Failure Due to Thermal Stress written by Randall C. Wong and published by . This book was released on 2001 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Download or read book Analysis Modelling of Gallium Arsenide Heterojunction Bipolar Transistor Mixers written by Bernard Anthony Xavier and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization Modeling and Fabrication of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Melih Özaydin and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Modeling of InGaP GaAs Heterojunction Bipolar Transistor written by Sung-Jin Ho and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Process Development and Device Modelling of Gallium Arsenide Heterojunction Bipolar Transistors written by Anssi Hovinen and published by . This book was released on 2001 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Rules and HSPICE Thermal Electrical Model of InGaP GaAs HBT for Analog to Digital Conversion Application written by Jinghui Mu and published by . This book was released on 1997 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-03-02 with total page 1168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Growth and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy written by Paul Michael Enquist and published by . This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2009-07-01 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.
Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Analysis of a Gallium Arsenide Heterojunction Bipolar Transistor written by Edward David Goff and published by . This book was released on 1991 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the IEEE International Caracas Conference on Devices Circuits and Systems written by and published by . This book was released on 1998 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
