Download or read book Modeling of a High Frequency Field Effect Transistor on Indium Gallium Nitride written by Tarik Menkad and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling of a High Frequency Field Effect Transitor on Indium Gallium Nitride written by Tarik Menkad and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum devices are an important class of modern heterostructure devices in which quantum effects are exploited directly. A Gallium Nitride high frequency field effect transistor (FET), the subject of this work, exploits a newly found exciton source in Indium Gallium Nitride InxGa1-xN. These quasi-particles are used as a quantum electron source for the FET channel, made of Intrinsic Gallium Nitride (GaN). The present work addresses the natural need for providing this high frequency transistor with a device model. Following the same steps as those used in classical Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) modeling, a model for the metal oxide heterojunction capacitor; core of this high frequency field effect transistor, is first developed.

Download or read book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-29 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Download or read book Nanodevices for Integrated Circuit Design written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2023-10-18 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: NANODEVICES FOR INTEGRATED CIRCUIT DESIGN Nanodevices are an integral part of many of the technologies that we use every day. It is a constantly changing and evolving area, with new materials, processes, and applications coming online almost daily. Increasing demand for smart and intelligent devices in human life with better sensing, communication and signal processing is increasingly pushing researchers and designers towards future design challenges based upon internet-of-things (IoT) applications. Several types of research have been done at the level of solid-state devices, circuits, and materials to optimize system performance with low power consumption. For suitable IoT-based systems, there are some key areas, such as the design of energy storage devices, energy harvesters, novel low power high-speed devices, and circuits. Uses of new materials for different purposes, such as semiconductors, metals, and insulators in different parts of devices, circuits, and energy sources, also play a significant role in smart applications of such systems. Emerging techniques like machine learning and artificial intelligence are also becoming a part of the latest developments in an electronic device and circuit design. This groundbreaking new book will, among other things, aid developing countries in updating their semiconductor industries in terms of IC design and manufacturing to avoid dependency on other countries. Likewise, as an introduction to the area for the new-hire or student, and as a reference for the veteran engineer in the field, it will be helpful for more developed countries in their pursuit of better IC design. It is a must have for any engineer, scientist, or other industry professional working in this area.

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Design Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.

Download or read book Gallium Nitride enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-06-11 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Download or read book Fabrication Characterization and Simulation of Gallium Nitride Heterojunction Field Effect Transistors written by Joseph Record and published by . This book was released on 2016 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the fabrication, characterization, and off-state gate leakage simulation of Al x Ga 1−x N/GaN Heterojunction Field-Effect Transistors (HFETs). GaN HFETs are promising devices for high power, high frequency applications such as microwave amplifiers. This is due to the numerous benefits of the GaN material system including high electron mobility, breakdown field, saturation velocity, and thermal conductivity. This thesis is broken down into two major components. The first and most significant covers the fabrication and characterization of Al x Ga 1−x N/GaN HFETs. Devices were fabricated at McGill University’s Nanotools Microfabrication laboratory using a custom designed process flow. This process flow builds on previous work and presents Ohmic contact results of Ti/Al/Ti/Au and Ti/Al/Ti/Al/Ti/Au metalizations. A complete description of the process flow is provided including technology characterization results, such as mesa height profiling, where applicable. Electrical characterization of fabricated devices is performed. Results show an average contact resistance across temperature of 3.39Ωmm for the Ti/Al/Ti/Au metalization and 3.22Ωmm for the Ti/Al/Ti/Al/Ti/Au metalization. Full contact resistance results are provided over a wide range of temperature. The Ti-Al multi-layer metalization also outperforms the Ti/Al/Ti/Au metalization in terms of drain current density ( 0.12A/mm vs. 0.09A/mm ) and transconductance ( 60mS/mm vs. 40mS/mm ). Off-state gate leakage and current-voltage profiling are also carried out. The second part of this thesis concerns gate leakage current in Al x Ga 1−x N/GaN HFETs. A new off-state gate leakage model is presented to determine the variation in leakage mechanisms with the change in barrier layer aluminum mole fraction. A new metric of turning point is introduced to show where Fowler-Nordheim tunneling becomes the dominant leakage mechanism. Results show that as Al mole fraction is increased, the turning point becomes more negative and total gate leakage increases. Finally, improvements to the fabrication process and simulations are presented.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling Gallium nitride Based High Electron Mobility Transistors written by Ujwal Radhakrishna and published by . This book was released on 2016 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium-Nitride-based high electron mobility transistor (HEMTs) technology is increasingly finding space in high voltage (HV) and high frequency (HF) circuit application domains. The superior breakdown electric field, high electron mobility, and high temperature performance of GaN HEMTs are the key factors for its use as HV switches in converters and active components of RF-power amplifiers. Designing circuits in both application regimes requires accurate compact device models that are grounded in physics and can describe the non-linear terminal characteristics. Currently available compact models for HEMTs are empirical and hence are lacking in physical description of the device, which becomes a handicap in understanding key device-circuit interactions and in accurate estimation of device behavior in circuits. This thesis seeks to develop a physics-based compact model for GaN HEMTs from first principles which can be used as a design tool for technology optimization to identify device-performance bottlenecks on one hand and as a tool for circuit design to investigate the impact of behavioral nuances of the device on circuit performance, on the other. Part of this thesis consists of demonstrations of the capabilities of the model to accurately predict device characteristics such as terminal DC- and pulsed-currents, charges, small-signal S-parameters, large-signal switching characteristics, load-pull, source-pull and power-sweep, inter-modulation-distortion and noise-figure of both HV- and RF-devices. The thesis also aims to tie device-physics concepts of carrier transport and charge distribution in GaN HEMTs to circuit-design through circuit-level evaluation. In the HV-application regime benchmarking is conducted against switching characteristics of a GaN DC-DC converter to understand the impact of device capacitances, field plates, temperature and charge-trapping on switching slew rates. In the RF-application regime validation is done against the large-signal characteristics of GaN-power amplifiers to study the output-power, efficiency and compression characteristics as function of class-of-operation. Noise-figure of low-noise amplifiers is tested to estimate the contributions of device-level noise sources, and validation against switching frequency and phase-noise characteristics of voltage-controlled oscillators is done to evaluate the noise performance of GaN HEMT technology. Evaluation of model-accuracy in determining the conversion-efficiency of RF-converters and linearity metrics of saturated non-linear amplifiers is carried out. The key contribution of this work is to provide a tool in the form of a physics-based compact model to device-technology-engineers and circuit-designers, who can use it to evaluate the potential strengths and weaknesses of the emerging GaN technology.

Download or read book Industrialization of the Developing Countries Basic Problems and Issues for Action written by and published by . This book was released on 1974 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Nitride Mesfet Metal Semiconductor Field Effect Transistor Terminal Charge and Capacitance Simulation Using New Charge Conserving Capacitance Model written by Nima Sahabi and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The graduate project is based on the results of the IV characteristics, gate charge, source and drain charges, and the terminal gate-source, and terminal gate-drain capacitance. The pinch-off voltage has been extracted and the value agrees well with the active channel thickness. I-V characteristics shows the linear and non-linear properties for potential switching and high frequency performance. In order to confirm the switching performance, the intrinsic parameters such as gate charge, source and drain charge and gate capacitances has been evaluated to understand the frequency behavior of the GaN MESFET. A typical MESFET structure was considered with a gate width of W=10x10-4 cm, Gate length of L=0.1x10-4 cm, doping concentration of Nd= 7.0*1017 cm-3 and active layer thickness of d=0.2x10-4 cm.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Microwave RF Antennas and Circuits written by Ofer Aluf and published by Springer. This book was released on 2016-12-01 with total page 1060 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes a new concept for analyzing RF/microwave circuits, which includes RF/microwave antennas. The book is unique in its emphasis on practical and innovative microwave RF engineering applications. The analysis is based on nonlinear dynamics and chaos models and shows comprehensive benefits and results. All conceptual RF microwave circuits and antennas are innovative and can be broadly implemented in engineering applications. Given the dynamics of RF microwave circuits and antennas, they are suitable for use in a broad range of applications. The book presents analytical methods for microwave RF antennas and circuit analysis, concrete examples, and geometric examples. The analysis is developed systematically, starting with basic differential equations and their bifurcations, and subsequently moving on to fixed point analysis, limit cycles and their bifurcations. Engineering applications include microwave RF circuits and antennas in a variety of topological structures, RFID ICs and antennas, microstrips, circulators, cylindrical RF network antennas, Tunnel Diodes (TDs), bipolar transistors, field effect transistors (FETs), IMPATT amplifiers, Small Signal (SS) amplifiers, Bias-T circuits, PIN diode circuits, power amplifiers, oscillators, resonators, filters, N-turn antennas, dual spiral coil antennas, helix antennas, linear dipole and slot arrays, and hybrid translinear circuits. In each chapter, the concept is developed from the basic assumptions up to the final engineering outcomes. The scientific background is explained at basic and advanced levels and closely integrated with mathematical theory. The book also includes a wealth of examples, making it ideal for intermediate graduate level studies. It is aimed at electrical and electronic engineers, RF and microwave engineers, students and researchers in physics, and will also greatly benefit all engineers who have had no formal instruction in nonlinear dynamics, but who now desire to bridge the gap between innovative microwave RF circuits and antennas and advanced mathematical analysis methods.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth Delivers a methodical technical presentation in over 1500 pages Includes 50+ contributions prepared by leading experts Offers practical support and guidance with detailed examples and applications for lab and field experimentation Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles Features new chapter level templates and a narrative progression to facilitate understanding

Download or read book A Compact Transport and Charge Model for GaN based High Electron Mobility Transistors for RF Applications written by Ujwal Radhakrishna and published by . This book was released on 2013 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.