Download or read book Modeling Design Fabrication and Characterization of the Insulated Gate Bipolar Transistor IGBT with Integrated Current Sensors written by Cheng Shen and published by . This book was released on 1994 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Simulation Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor IGBT BRT written by Lin Wang and published by . This book was released on 1999 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The IGBT Device written by B. Jayant Baliga and published by William Andrew. This book was released on 2015-03-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.
Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Download or read book The IGBT Device written by B. Jayant Baliga and published by Elsevier. This book was released on 2022-11-25 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt: The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power. This book is the first available on the applications of the IGBT. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. Presents essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors Teaches the methodology for the design of IGBT chips, including edge terminations, cell topologies, gate layouts, and integrated current sensors Covers applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion Written by the inventor of the device, this is the first book to highlight the key role of the IGBT in enabling electric vehicles and renewable energy systems with global impacts on climate change
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near threshold Region written by Farah P. Vandrevala and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1994 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Regulation of Three Phase AC Loads with Integrated Pilot Sensors in the Low side Switches written by Sibaprasad Chakrabarti and published by . This book was released on 2004 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization and modeling of the power Insulated Gate Bipolar Transistor written by Allen Ray Hefner and published by . This book was released on 1996 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Fabrication and Characterization of a Silicon Bipolar Transistor written by Jiun-yih Yu and published by . This book was released on 1988 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Simulation and Modeling of Insulated Gate Bipolar Transistor written by Kaustubh Gupta and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277
Download or read book Characterization of Power IGBTs Under Pulsed Power Conditions written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The power insulated gate bipolar transistor (IGBT) is used in many types of applications. Although the use of the power IGBT has been well characterized for many continuous operation power electronics applications, little published information is available regarding the performance of a given IGBT under pulsed power conditions. Additionally, component libraries in circuit simulation software packages have a finite number of IGBTs. This paper presents a process for characterizing the performance of a given power IGBT under pulsed power conditions. Specifically, signals up to 3.5 kV and 1 kA with 1-10 [mu]s pulse widths have been applied to a Powerex QIS4506001 IGBT. This process utilizes least squares curve fitting techniques with collected data to determine values for a set of modeling parameters. These parameters were used in the Oziemkiewicz implementation of the Hefner model for the IGBT that is utilized in some circuit simulation software packages. After the nominal parameter values are determined, they can be inserted into the Oziemkiewicz implementation to simulate a given IGBT.
Download or read book Compact Modeling of SiC Insulated Gate Bipolar Transistors written by Sonia Marie Perez and published by . This book was released on 2016 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ̊C and at 125 ̊C; n-channel SiC at 25 ̊C and at 175 ̊C; and p-channel SiC at 150 ̊C and at 250 ̊C. Verification was performed through capacitance, DC output characteristics, and turn-off transient simulations. The validated MAST model was then translated into the Verilog-A language, and the Verilog-A model results were validated against the updated MAST model.
Download or read book Design Simulation Fabrication and Characterization of High voltage N channel DMOS Insultated Gate Bipolar Junction Transistor with Diverter IGBID written by Suk Hoon Ku and published by . This book was released on 1999 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Integrated IGBT Active Gate Driver with Fast Feed forward Variable Current written by Alexander L. McHale and published by . This book was released on 2016 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Insulated-Gate Bipolar Transistor (IGBT) is a hybrid of bipolar and MOSFET transistors. As a consequence, IGBTs can handle higher current typical of bipolar transistors with the ease of control typical of MOSFETs. These characteristics make IGBTs desirable for high power Switch Mode Power Supplies (SMPS). In high power systems such as these, devices must be very reliable, as device failures may result in safety hazards such as fires in addition to the failure of the system. Conventional Gate Driver (CGD) circuits typically design for reliability in these systems by including a resistor between the gate driver and gate of the IGBT. This slows the switching waveforms, reducing stress on the IGBT while sacrificing efficiency. This solution is suboptimal, however, and as such Active Gate Drivers (AGD) have been designed to control voltage and current slopes through the IGBT by modulating the gate signal. AGD circuits found on the market today consist of a combination of an CGD with external components to implement the variable current necessary for protection. This requires a large amount of area on a Printed Circuit Board ( PCB ), and thus can be costly. Therefore, it can be desirable to integrate the AGD functionality into an on-chip system. In this thesis, an AGD is designed, fabricated and analyzed to show that IGBT gate voltage can be controlled in a manner capable of reducing overvoltage, as well as slowed when desired using an on-chip system. The current provided by this gate driver is controlled by feedback signals indicating the switching state of the device, as well as input bits that determine total output current.
