Download or read book Modeling Carbon Nanotube Field Effect Transistors with Fixed and Suspended Nanotube Gates written by Yuru A. Tarakanov and published by . This book was released on 2008 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Carbon Based Electronics written by Ashok Srivastava and published by CRC Press. This book was released on 2015-03-19 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me
Download or read book Carbon Nanotube Electronics written by Ali Javey and published by Springer Science & Business Media. This book was released on 2009-04-21 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a complete overview of the field of carbon nanotube electronics. It covers materials and physical properties, synthesis and fabrication processes, devices and circuits, modeling, and finally novel applications of nanotube-based electronics. The book introduces fundamental device physics and circuit concepts of 1-D electronics. At the same time it provides specific examples of the state-of-the-art nanotube devices.
Download or read book Quantum Theory Modeling Analysis and Design of Carbon Nanotube Field Effect Transistors written by Khairul Alam and published by . This book was released on 2006 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanowelded Carbon Nanotubes written by Changxin Chen and published by Springer Science & Business Media. This book was released on 2009-08-26 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces a novel ultrasonic nanowelding technology of carbon nanotubes (CNTs) to metal electrodes and its application for CNT devices. It will be of interest to graduates, scientists and engineers working on CNTs and related topics.
Download or read book Modeling of Carbon Nanotube Transistors in VHDL AMS written by and published by . This book was released on 2007 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon nanotubes(CNTs) are being intensively investigated as possible structures from which nanoscale transistors and logic gates might be fabricated. The nanoscale transistors i.e., carbon nanotube field-effect transistors (CNTFETs) have generated a lot of interest because of their ability to serve as an alternative to existing silicon technology. To explore the role of CNTFETs in future integrated circuits, it is important to evaluate their performance as compared to the metal oxide semiconductor field-effect transistor (MOSFET). However, to do that we need a model that can accurately describe the behaviour of the CNFETs so that the design and evaluation of circuits using these devices can be made. As the current approach to understand the characteristics of these devices is complex and intensive, there is a need to develop a compact model. The simple, accurate and adequate compact model thus developed can be integrated into hardware description language (HDL) to compare the accuracy and performance against the MOSFET. In this thesis, we have performed a study of the working principles of semiconducting carbon nanotubes. The main goal of this thesis is develop a compact model for CNFET and integrate it with VHDL-AMS and verify the functionality. For this purpose a cylindrical gate Schottky-Barrier Carbon Nanotube Field Effect Transistor (SB-CNFET) is considered. The dependencies of the model on various physical parameters are studied. The VHDL-AMS model developed in this thesis forms basis for future research in integrating CNFET models in HDLs.
Download or read book Modeling of Ballistic Carbon Nanotube Transistors for Analog High frequency Applications written by Martin Claus and published by . This book was released on 2011 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Major Applications of Carbon Nanotube Field Effect Transistors CNTFET written by Raj, Balwinder and published by IGI Global. This book was released on 2019-12-06 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.
Download or read book Compact Modeling of Carbon Nanotube Field Effect Transistor and Its Circuit Performance written by Desmond Chang Yih Chek and published by . This book was released on 2011 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Carbon Nanotube Field Effect Transistor written by Fouad Sabry and published by One Billion Knowledgeable. This book was released on 2022-07-10 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.
Download or read book Low Complexity Arithmetic Circuit Design in Carbon Nanotube Field Effect Transistor Technology written by K. Sridharan and published by Springer Nature. This book was released on 2020-08-19 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces readers to the emerging carbon nanotube field-effect transistor (CNTFET) technology, and examines the problem of designing efficient arithmetic circuits in CNTFET technology. Observing that CNTFETs make it possible to achieve two distinct threshold voltages merely by altering the diameter of the carbon nanotube used, the book begins by discussing the design of basic ternary logic elements. It then examines efficient CNTFET-based design of single and multiple ternary digit adders by judicious choice of unary operators in ternary logic, as well as the design of a ternary multiplier in CNTFET technology, and presents detailed simulation results in HSPICE. Lastly, the book outlines a procedure for automating the synthesis process and provides sample code in Python.
Download or read book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor written by Iraj Sadegh Amiri and published by Springer. This book was released on 2017-10-29 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
Download or read book Modeling and Electronic Characterizations of Carbon Nanotube Field Effect Transistors written by Maryam Etezadbrojerdi and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of the present work is to explore the concept of nanotechnology, carbon nanotubes and its function in Carbon Nanotube Field Effect Transistor (CNFET) and develop an analytical theory for nanometer-size field-effect transistor. This thesis research models and characterizes the future opportunities of CNFETs within digital designs. The energy band of CNFETs has been modeled at equilibrium. For equilibrium condition, the carrier concentration is found by allowing the local electrostatic potential to rigidly shift the carbon nanotube density of states. The effect of contacts characteristics leading to the potential spikes in the tube at the source and drain of height determined by both work functions of source and drain and V gs have been explored. By approximating the potential barrier shape and using Landauer-Büttiker expression it can be seen that CNFET have noteworthy IV characteristics. The current characteristics are similar to MOSFETs, having the operation being controlled by the electric field from the gate and source/drain voltage which can lead to strong band bending allowing carriers to tunnel through the interface barrier.
Download or read book Current Transport Modeling of Carbon Nanotube Field Effect Transistors for Analysis and Design of Integrated Circuits written by Jose Mauricio Marulanda Prado and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Mosfet Like Carbon Nanotube Field Effect Transistor written by Francis Khui Seng Chong and published by . This book was released on 2009 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Graphene and Carbon Nanotube Field Effect Transistors written by Thomas H. Caine and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behaviour with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.
Download or read book Modeling of Carbon Nanotube Field Effect Transistors written by Dinh Sy Hien and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
